Development of Noble Metal-Gate TiO_2 Schottky Diode DH sensor
Development of Noble Metal-Gate TiO_2 Schottky Diode DH sensor
批准号:
05555186
负责人:
SUGIMOTO Katsuhisa
金额:
$4.16万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
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英文摘要
An application of hydrogen-sensitive metal-gate Schottky barrier diodes to dissolved hydrogen (DH) sensors was examined. Single crystals of Nb_2O_5-doped TiO_2 and thin films of Pd-base alloy (Pd-Ag, Pd-Au, Pd-Pt) were used as a semiconductor and a catalytic metal-gate of diodes, respectively. The DH response of the diodes was first examined in aqueous solutions with various DH concentrations at 298K.It was found that Pd-30-40at%Ag alloy-gate diodes showed a high sensitivity to DH over a wide concentration range. They did not suffer from hydrogen embrittlement at 298K and had a good corrosion resistance at elevated temperatures. Linear relationships between the response voltage of Pd-30-40at%Ag diodes and the DH concentration of solutions were found at every temperatures examined (1298-573K) . The sensitivities of the diodes to pH were less than 10% of their sensitivities to DH.The diodes showed good long-term stability, while their DH response rate decreased after prolonged exposure in high-temperature solutions.
期刊论文(2)
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会议论文
Katsuhisa Sugimoto et al.: "Development of Dissolved Hydrogen Sensor Using Noble Metal-Gate TiO_2 Schottky Diode" to be published in Journal of the Electrochemical Society.
Katsuhisa Sugimoto 等人:“Development of Dissolved Hydrogen Sensor Using Noble Metal-Gate TiO_2 Schottky Diode”即将发表在《电化学学会杂志》上。
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
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通讯作者:
Katsuhisa Sugimoto: "Development of Dissolved Hydrogen Sensor Using Noble Metal-Gate TiO_2 Schottky Diode" Journal of the Electrochemical Society. [発表予定].
Katsuhisa Sugimoto:“使用贵金属栅极 TiO_2 肖特基二极管开发溶解氢传感器”《电化学学会杂志》[预定演讲]。
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
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通讯作者:
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依托单位: