Development of Noble Metal-Gate TiO_2 Schottky Diode DH sensor

贵金属栅TiO_2肖特基二极管DH传感器的研制

• 批准号: 05555186
• 负责人: SUGIMOTO Katsuhisa
• 金额: $ 4.16万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555186/
• 关键词: Dissolved hydrogen sensor; TiO_2 single crystal; Noble metal base alloy; High-temperature and high-pressure solution; Ion beam sputtering

An application of hydrogen-sensitive metal-gate Schottky barrier diodes to dissolved hydrogen (DH) sensors was examined. Single crystals of Nb_2O_5-doped TiO_2 and thin films of Pd-base alloy (Pd-Ag, Pd-Au, Pd-Pt) were used as a semiconductor and a catalytic metal-gate of diodes, respectively. The DH response of the diodes was first examined in aqueous solutions with various DH concentrations at 298K.It was found that Pd-30-40at%Ag alloy-gate diodes showed a high sensitivity to DH over a wide concentration range. They did not suffer from hydrogen embrittlement at 298K and had a good corrosion resistance at elevated temperatures. Linear relationships between the response voltage of Pd-30-40at%Ag diodes and the DH concentration of solutions were found at every temperatures examined (1298-573K) . The sensitivities of the diodes to pH were less than 10% of their sensitivities to DH.The diodes showed good long-term stability, while their DH response rate decreased after prolonged exposure in high-temperature solutions.

研究了氢敏金属栅肖特基势垒二极管在溶解氢传感器中的应用。用Nb_2O_5掺杂的TiO_2单晶和Pd基合金薄膜（Pd-Ag，Pd-Au，Pd-Pt）分别作为半导体和二极管的催化金属栅。在298 K下，研究了不同浓度的DH对二极管的响应，发现Pd-30-40at%Ag合金栅二极管在较宽的浓度范围内对DH具有很高的灵敏度.它们在298 K下没有氢脆，在高温下具有良好的耐腐蚀性。Pd-30-40at%Ag二极管的响应电压在1298- 573 K范围内与溶液的DH浓度呈线性关系。二极管对pH的灵敏度小于其对DH的灵敏度的10%。二极管表现出良好的长期稳定性，而在高温溶液中长时间暴露后，其DH响应速率下降。

项目成果

Katsuhisa Sugimoto et al.: "Development of Dissolved Hydrogen Sensor Using Noble Metal-Gate TiO_2 Schottky Diode" to be published in Journal of the Electrochemical Society.

Katsuhisa Sugimoto 等人：“Development of Dissolved Hydrogen Sensor Using Noble Metal-Gate TiO_2 Schottky Diode”即将发表在《电化学学会杂志》上。

Katsuhisa Sugimoto: "Development of Dissolved Hydrogen Sensor Using Noble Metal-Gate TiO_2 Schottky Diode" Journal of the Electrochemical Society. [発表予定].

Katsuhisa Sugimoto：“使用贵金属栅极 TiO_2 肖特基二极管开发溶解氢传感器”《电化学学会杂志》[预定演讲]。