权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Study on Kinetics of Crystal Dissolution

晶体溶解动力学研究

基本信息

批准号：
61580046
负责人：
WATANABE Jiro
金额：
$ 1.22万
依托单位：
Akita University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1988
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-61580046/
关键词：
copper dislocation kinetics of crystal dissolution two-dimensional nucleation step on crystal surface potentiostatic electrolysis etch pit インヒビター結晶溶解熱力学的速度論

项目摘要

The Cu (111) surface was etched by a potentiostatic electrolysis and the effects of applied potential, etching temperature and inhibitor concentration in an electrolyte on the dissolution at edge dislocations and matrix surface were investigated. The composition of the standard electrolyte was 5 kmol・m^<-3>NaCl, 0.25 kmol・m^<-3>NaBr, 10^<-4> kmol・m^<-3>CuCl. The dislocation etch pits formed a slightly rounded triangular pyramid. From the variation of the size of these etch pits and the dissolved depth of matrix surface with an etching time, the vertical dissolution rate along a dislocation line, Vd, the lateral one, Vh, and the vertical one of matrix surface,Vs, were determined.1. Effect of applied potential : Etching was carried out in the standard electrolyte at 298 K under constant potentials of 0,10,20 and 30 mV vs SHE. The values of Vd, Vh and Vs became large as the applied potential increased. The rate of increase in Vd was slightly larger than that in Vh and Vs.2. Effect of etching temperature : Etching was carried out in the standard electrolyte at 268,283,298 and 308 K under overpotential of 176 mV. The rise of temperature increased the values of Vd, Vh and Vs. The rate of increase in Vd was smaller than that in Vh and Vs.3. Effect of inhibitor concentration : Etching was carried out at 298 K under overpotential of 176 mV in electrolytes containing 0.1, 0.25, 0.4 and 0.5 kmol・m^<-3>NaBr besides 5 kmol・m^<-3>NaCl and 10^<-4> kmol・m^<-3>CuCl. The values of Vd, Vh and Vs decreased at a low concentration of inhibitor and increased slightly at its high concentration. The rate of decrease in Vd was smaller than that in Vh and Vs.4. It was shown that these results could be explained qualitatively on the basis of the two dimensional nucleation theory of crystal dissolution.

采用恒电位电解法对Cu（111）表面进行了腐蚀，研究了外加电位、腐蚀温度和电解液中缓蚀剂浓度对刃位错溶解和基体表面的影响。标准电解液的组成为5 kmol·<-3>m^NaCl，0.25 kmol·<-3>m^NaBr，10 <-4>kmol·<-3>m^CuCl。位错蚀坑形成一个略圆的三角金字塔。根据腐蚀坑的大小和基体表面的溶解深度随腐蚀时间的变化，确定了沿位错线沿着的垂直溶解速率Vd、沿位错线的横向溶解速率Vh和沿基体表面的垂直溶解速率Vs.施加电压的影响：在标准电解液中于298 K下在0、10、20和30 mV（相对于SHE）的恒定电压下进行蚀刻。Vd、Vh和Vs随外加电位的增大而增大。Vd的增加率略大于Vh和Vs。刻蚀温度的影响：在标准电解液中，在268、283、298和308 K下，在176 mV的过电位下进行刻蚀。温度的升高使Vd、Vh和Vs值增大，但Vd的增大幅度小于Vh和Vs.缓蚀剂浓度的影响：在298 K，176 mV的过电位下，在含有0.1、0.25、0.4和0.5 kmol·<-3>m^NaBr以及5 kmol·<-3>m^NaCl和10 <-4>kmol·m^CuCl<-3>的电解液中进行腐蚀。Vd、Vh和Vs值在低浓度抑制剂时降低，在高浓度抑制剂时略有升高。Vd的下降率小于Vh和Vs。结果表明，这些结果可以用晶体溶解的二维成核理论定性地解释。