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Measurement and Evaluation of Defects induced by Processing of Small Regions by means of Interface-Barrier-Controlled Electron Spin Resonance

利用界面势垒控制电子自旋共振测量和评估小区域加工引起的缺陷

基本信息

批准号：
62550220
负责人：
MURAKAMI Kouichi
金额：
$ 1.28万
依托单位：
Institute of Materials Science, University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1987
资助国家：
日本
起止时间：
1987 至 1988
项目状态：
已结题

项目摘要

In order to know electronic levels as well as geometrical and electronic structures of defects or impurities in small regions of silicon which are induced by semiconductor processings, we have measured the interface-barrier-controlled electron spin resonance (ESR) by using electrode and have developed a new method of analyzing the temperature dependent ESR linewidth. In this study, the off-center substitutional nitrogen was introduced in silicon surface layer of 2000 A by ion implantation and subsequent laser annealing to obtain the samples.For the interface-barrier-controlled ESR, metal-oxide-semiconductor structure was formed to detect ESR changes by controlling the oxide-silicon interface-barrier. We clarified a few problems for this measurement; i.e., (1) leak current due to the large area (20 x 2 mm^2 ) of the electrode and (2) residual defects near the oxide-silicon interface. These must be solved to advance this mothod.For the newly developed method, we demonstrated that the electronic level of off-center substitutional nitrogen in silicon can be determined by analyzing the ESR linewidth obtained over a wide temperature region from 150 to 550 K. The temperature dependence observed above 330 K is interpreted in terms of motional broadening or shortening of the spin-lattice relaxation time via thermal excitation in the conduction band and trapping by the deep level. According to this analysis, we obtain an energy level of E_c - 0.33 eV and show that this mehtod is very useful for determination of defect levels as well as the structures.

为了了解半导体工艺在硅中引入的小区域缺陷或杂质的电子能级、几何结构和电子结构，我们用电极测量了界面势垒控制的电子自旋共振（ESR），发展了一种分析ESR线宽随温度变化的新方法。采用离子注入和激光退火的方法在2000 A的硅表面层中引入偏离中心的替代氮，形成金属-氧化物-半导体结构，通过控制氧化物-硅界面势垒来检测ESR的变化。我们澄清了这种测量的一些问题;即，(1)由于电极的大面积（20 x 2 mm^2）和（2）氧化物-硅界面附近的残留缺陷导致的漏电流。对于新开发的方法，我们证明了通过分析在150 ~ 550 K宽温区获得的ESR谱线宽度，可以确定硅中偏心替位氮的电子能级。在330 K以上观察到的温度依赖性的解释在运动方面的扩大或缩短的自旋晶格弛豫时间，通过热激发在导带和深能级捕获。根据这一分析，我们得到了E_c = 0.33eV的能级，并表明这一方法对于确定缺陷能级和结构是非常有用的。