Control of Hydrogen in Si and its Application to Thin Film Transistor

硅中氢的控制及其在薄膜晶体管中的应用

• 批准号: 11555001
• 负责人: MURAKAMI Kouichi
• 金额: $ 8.19万
• 依托单位: University of Tsukuba
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555001/
• 关键词: Silicon; Amorphous Si; Poly-silicon; Hydrogen Passivation; Hydrogen Molecule; Raman Scattering; Multivacancies; Si-H-B Complexes; 水素; ドーパントのパッシベーション; Si-H結合; ポリシリコン; レーザーアニール; ポリシリコン化; 水素複合体中心

We have investigated hydrogen states in silicon and have developed a control method of hydrogen in Si for making the quality of Si films for various devices such as thin film transistors on glass much better. One of the most important results obtained in this study is that B acceptor is more easily passivated by hydrogen atom than P donors in crystalline Si. This was demonstrated by the experimental results that several B-related Si-H bonding centers were observed for me first time by Raman scattering measurements after hydrogen atom treatment, but no P-related Si-H bonds were detected. Secondly, we found that some kinds of multivacancies are stable up to 600 ℃ by measuring Raman scattering of hydrogen molecules and Si-H in hydrogenated Si after thermal annealing of ion implanted samples. According to theoretical calculations, the candidates of the multivacancies are 6 or 10 vacancies. We have also investigated the correlation between H amount measured by SIMS and S-H bonding centers done by Raman scattering method for amorphous Si including various levels of high density of hydrogen. It is found that Raman scattering measurement can be a simple method for estimating approximately the amount of incorporated hydrogen. However, it was impossible to detect Si-H after polycrystallization attained by excimer laser annealing, probably due to surface roughness produced by laser annealing of amorphous Si on glass.

我们研究了硅中的氢状态，并开发了一种控制硅中氢的方法，以使各种器件(如玻璃上的薄膜晶体管)的硅膜质量更好。本研究得到的最重要的结果之一是，晶体硅中的B受体比P施主更容易被氢原子钝化。实验结果表明，在氢原子处理后，拉曼散射首次观察到了几个与B有关的Si-H键中心，但没有检测到与P有关的Si-H键。其次，通过测量离子注入样品热退火后氢分子和氢化硅中的硅-氢的拉曼散射发现，某些多空位在600℃以下是稳定的。根据理论计算，多个空缺的候选者为6个或10个空缺。我们还研究了SIMS测量的氢量与用拉曼散射方法测量的S-H键中心之间的相关性。结果表明，拉曼散射测量可以作为估算氢原子掺杂量的一种简单方法。然而，由于非晶硅在玻璃表面的激光退火产生的表面粗糙度，通过准分子激光退火法获得的多晶化后的Si-H是不可能检测到的。

项目成果

T.Mori 他: "Thermal Behavior of Hydrogen Molecules trapped by Multivacancies in Silicon"Proc.Inten.on Defects in Semiconductors. (印刷中). (2001)

T.Mori 等人：“硅中多空位捕获的氢分子的热行为”Proc.Inten.on 半导体缺陷（2001 年出版）。

K. Ishioka, M. Kitajima, S. Tateishi, K. Nakanoya, N. Fukata, T. Mori, K. Murakami, S. Hishida: "Hydrogen Molecules trapped by Multivacancies in Silicon"Phys. Rev., B. 60. 10852-10854 (1999)

K. Ishioka、M. Kitajima、S. Tateishi、K. Nakanoya、N. Fukata、T. Mori、K. Murakami、S. Hishida：“硅中多空位捕获的氢分子”Phys。

K. Murakami 他: "Synthesis of Silicon Nanoparticles and Impurity Doping by Laser Ablation"SPIE Proc.. 4274. 222-231 (2001)

K. Murakami 等人：“通过激光烧蚀合成硅纳米颗粒和杂质掺杂”SPIE Proc.. 4274. 222-231 (2001)

K. Murakami, A. Miyashita, O. Yoda: "Laser-plasma Soft X-ray Absorption Spectroscopy of Laser-ablated Soicon and Graphite Particles"in Mesoscopic Materials and Clusters - Their Physical and Chemical Properties edited by T. Aral et al. (Kodansha-Springer,

K. Murakami、A. Miyashita、O. Yoda：《介观材料和团簇 - 它们的物理和化学性质》中的“激光烧蚀 Soicon 和石墨颗粒的激光等离子体软 X 射线吸收光谱”，由 T. Aral 等人编辑。

T. Mori, K. Otsuka, N. Umehara, K. Ishioka, K. Kitajima, S. Hishita, K. Murakami: "Thermal Behavior of Hydrogen Molecules trapped by Multivacancies in Silicon"Proc. International Conference on Shallow Level Centers in Semiconductors Pysica B. 302-303. 239

T. Mori、K. Otsuka、N. Umehara、K. Ishioka、K. Kitajima、S. Hishita、K. Murakami：“硅中多空位捕获的氢分子的热行为”Proc。