Preparation of Ferroelectric Films by the Sol-Gel Method

溶胶-凝胶法制备铁电薄膜

基本信息

  • 批准号:
    62550570
  • 负责人:
  • 金额:
    $ 1.22万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1987
  • 资助国家:
    日本
  • 起止时间:
    1987 至 1988
  • 项目状态:
    已结题

项目摘要

The sol-gel method which starts from metal-aldoxides is a promising process to prepare various oxide films. The present study has been carried out to establish the sol-gel process to form ferroelectric films in the system PbTiO_3-PbZrO_3. One of the problems encountered in the process is that these alkoxides of Ti and Zr is easily hydrohyzable. The stabilization of the alkoxides has been examined and then the PbTiO_3-PbZrO_3 films has been prepared from the stabilized alkoxides. The following results have been obtained through the present study: (1) ZrO_2 or B_2O_3-containing multicomponent films have been prepared from very hydrolyzable Zr- or B-alkoxides by carrying out the coating in a dry atmosphere. (2) Metal alkoxides of Al, Ti, or Zr have been found to be stabilized with chelating agents such as betha-diketones. Very homogeneous Al_2O_3, TiO_2, or ZrO_2 films have been obtained from the stabilized alkoxides of corresponding metals. (3) Ferroelectric films in the system PbTiO_3-PbZrO_3 have been prepared from Ti(O-nBu)_4 and Zr(O-nBu)_4 stabilized with acetyleacetone. The films obtained are amorphous below 400 c and crystallized by the heat-treatment at 500 c. The crystallinity of the films is increased with increasing heat-treatment temperature, accompanying the increase in dielectric constant. The dielectric constant of the films in the system PbTiO_3-PbZr/_3 decreases as the content of PbZrO_3 is increased.
以金属氧化物为原料的溶胶-凝胶法是一种很有前途的制备各种氧化物薄膜的方法。本文研究了PbTiO_3-PbZrO_3系统铁电薄膜的溶胶-凝胶法制备工艺。该方法中遇到的问题之一是这些Ti和Zr的醇盐容易水解。考察了醇盐的稳定性,并由稳定的醇盐制备了PbTiO_3-PbZrO_3薄膜。(1)用易水解的锆醇盐或硼醇盐在干燥气氛中进行镀膜,制备了含ZrO_2或B_2O_3的多元膜。(2)已经发现Al、Ti或Zr的金属醇盐用螯合剂如β-二酮稳定。由相应金属的稳定醇盐得到了非常均匀的Al_2O_3、TiO_2或ZrO_2薄膜。(3)以Ti(O-nBu)_4和Zr(O-nBu)_4为原料,乙酰丙酮为稳定剂,制备了PbTiO_3-PbZrO_3系统铁电薄膜。所获得的薄膜在400 ℃以下为非晶态,在500 ℃热处理时结晶。随着热处理温度的升高,薄膜的结晶度增加,同时介电常数也随之增加。PbTiO_3-PbZr/_3系统中薄膜的介电常数随PbZrO_3含量的增加而降低。

项目成果

期刊论文数量(35)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
峠登: 日化誌. 1952-1957 (1987)
山口攀登:Nikka 杂志 1952-1957(1987)。
  • DOI:
  • 发表时间:
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    0
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  • 通讯作者:
N. Tohge: "Preparation of B_2O_3-SiO_2 Coating Films by Sol-Gel Method" J. Cerm. Soc. Jpn.95. 182-185 (1987)
N. Tohge:“溶胶-凝胶法制备 B_2O_3-SiO_2 涂膜” J. Cerm。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
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  • 通讯作者:
N. Tohge: "Formation of Organic Polymer-Containing Gel Films and Their Application to the Fine-Patterning Process" J. Ceram. Soc. Jpn.96. 127-130 (1988)
N. Tohge:“含有机聚合物的凝胶薄膜的形成及其在精细图案化过程中的应用”J. Ceram。
  • DOI:
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  • 影响因子:
    0
  • 作者:
  • 通讯作者:
峠登, 松田厚範, 南努: 日本化学会誌. 1987. 1952-1957 (1987)
Toge、Atsunori Matsuda、Tsutomu Minami:日本化学会杂志 1987 年。1952-1957 年(1987 年)。
  • DOI:
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  • 影响因子:
    0
  • 作者:
  • 通讯作者:
N.Tohge,: Chemistry Express. 2. 141-144 (1987)
N.Tohge,:《化学快报》。
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TOHGE Noboru其他文献

TOHGE Noboru的其他文献

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{{ truncateString('TOHGE Noboru', 18)}}的其他基金

Fabricatio of Photonic Devices Using Photosensitive Gel Films and Their Properties
光敏凝胶薄膜光子器件的制备及其性能
  • 批准号:
    12555179
  • 财政年份:
    2000
  • 资助金额:
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Photosensitivity Mechanism of Chemically Modified Gel Films and Their Application to the Fabrication of Micro-Devices
化学修饰凝胶薄膜的光敏机理及其在微器件制备中的应用
  • 批准号:
    11650866
  • 财政年份:
    1999
  • 资助金额:
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Preparation of Functional Thin Films and Fine-Patterning by the Photo-Assisted Process
光辅助工艺制备功能薄膜和精细图案
  • 批准号:
    09650930
  • 财政年份:
    1997
  • 资助金额:
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Preparation and Characterization of Ferroelectric Thin Films for Memories by the Chemical Process
化学方法制备存储器用铁电薄膜并表征
  • 批准号:
    04555188
  • 财政年份:
    1992
  • 资助金额:
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)

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