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"Picosecond Regime Optical Sampler Using Semiconductor Lasers"

“使用半导体激光器的皮秒制度光学采样器”

基本信息

批准号：
01850013
负责人：
KAMIYA Takeshi
金额：
$ 7.3万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B).
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

项目摘要

[OBJECTIVE] The purpose of the present study is to construct a bread board level electro-optic sampling system in order to evaluate the capability of the ultrashort pulse technology for very fast electronics of 10-100 Gbit/s. The use of pulsed semiconductor lasers is the essential part of the presert implementation toward the realization of truly useful testing systems.[Ultrashort Pulse Generation from Semiconductor Lasers] Following the achievements of generating vey short optical pulses with FWHM less than 10 ps last year either by improving gain switching or by employing fibers for pulse compression, the focus this year is concentrated on the use of diode laser amplifier for increasing the pulse energy together with the shaping. The long er tail part usually associated with the gain switched laser pulses may be suppressed by utilizing the nonlinear gain dynamics. Namely if the incident pulse power level is properly high, the population inversion in the active medium is consumed mainly through the amplification of the main lobe, while the tail part is amplified only by the medium with almost depleted of the electron hole pairs. This idea was examined both by the computer simulation and the experiment. Specifically it was found that the configuration of reflected wave amplifier (RWA) is more efficient in shaping the pulses, because the population inversion will be more thoroughly depleted by the double path propagation.[Application of Diode Laser Ampoifier to Electro-Optic Sampling System] The use of diode laser amplifier helps the increase of signal power, meanwhile the excess noise poer from diode laser amplifier partially compensate the gain. It was examined theoretically and experimentally that the proper choice of the static retardation has an optimum point for maximizing the signal to noise ratio. Experimentally 6 dB net gain was confirmed.

【目的】构建一个面包板级电光采样系统，以评估超短脉冲技术在10-100 Gbit/s超快电子学中的应用能力。脉冲半导体激光器的使用是实现真正有用的测试系统的重要组成部分。【利用半导体激光器产生超短脉冲】继去年通过改善增益开关或利用光纤进行脉冲压缩而产生半高宽小于10 ps的超短光脉冲之后，今年的焦点集中在利用二极管激光放大器来增加脉冲能量和整形。利用非线性增益动力学可以抑制增益开关激光脉冲的长拖尾。即当入射脉冲功率水平适当高时，激活介质中的粒子数反转主要通过主瓣的放大被消耗，而尾部只被几乎耗尽电子空穴对的介质放大。通过计算机模拟和实验验证了这一观点。具体地，发现反射波放大器（RWA）的配置在整形脉冲方面更有效，因为双路径传播将更彻底地耗尽粒子数反转。【半导体激光放大器在电光采样系统中的应用】半导体激光放大器的使用有助于信号功率的提高，同时半导体激光放大器产生的多余噪声功率部分补偿了增益。从理论和实验上证明了静态延迟量的适当选择存在一个最佳点，使信噪比最大化。实验证实了6 dB的净增益。