Barkhausen Jump Amorphous Ribbon Sensor by Means of Inducing Herical Anisotropy

巴克豪森通过诱导螺旋各向异性跳跃非晶带传感器

• 批准号: 01550251
• 负责人: YAMASAKI Jiro
• 金额: $ 1.02万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550251/
• 关键词: Amorphous Ribbons; Barkhausen Jump; Sensor; Wall Pinning; Herical Anisotropy; Induced Anisotropy; アモルファス磁性体; 磁気異方性

Depending on the remarkable controlability of magnetic properties in amorphous materials, an effort was made successfully to fabricate the Barkhausen jump sensor elements by means of introducing the domain wall pinning caused by the locally induced herical anisotropy. The Barkhausen jump sensor element can generate the sharp pulse voltage in windings, then can be applied to reliable rotary encorder sensor and directional sensor without power supply. The research results are summarized as follows,(1) The herical anisotropy can be easily induced by annealing into the region where the domain wall exists during annealing. This region works as nucleation sites of reverse domain and pinning centers of domain walls and the re-entrant properties can be available.(2) The pinning force introduced even in short annealing time is fairly large, so that the reverse domain nucleates at the ribbon ends and grows abruptly to participates in the flux jump. Consequently, the jitter of pulse voltage (-do/dt) is large. To improve that precise control of wall pinning force is needed.(3) The wall width of amorphous materials is as wide as 2mu m, and increases with the induced herical anisotropy to increase the anisotropy energy in the wall which makes balance with the exchange energy.

利用非晶材料磁性能的显著可控性，通过引入局域感生磁各向异性引起的畴壁钉扎，成功地制备了巴克豪森跳跃传感器元件。该巴克豪森跳变传感器元件能在绕组中产生尖脉冲电压，可应用于可靠的旋转编码器传感器和无电源方向传感器。研究结果如下：（1）在退火过程中，对畴壁存在的区域进行退火处理，很容易产生磁各向异性。该区域作为反畴的形核中心和畴壁的钉扎中心，具有可重入特性。(2)即使在短时间退火下，引入的钉扎力也相当大，使得反向畴在带端部形核并突然长大，参与磁通跳跃。因此，脉冲电压的抖动（-do/dt）大。为了提高这一点，需要精确地控制墙体的钉扎力。(3)非晶材料的壁宽可达2 μ m，壁宽随感生各向异性的增加而增加，使壁内各向异性能增加，与交换能平衡。

项目成果

R.Schafer,W.H.Ho,J.Yamasaki,A.Hubert F.B.Humphrey: "Anisotropy pinning of domain walla in soft magnetic Material" IEEE Transaction on Magnetics.

R.Schafer、W.H.Ho、J.Yamasaki、A.Hubert F.B.Humphrey：“软磁材料中磁畴壁的各向异性钉扎”IEEE 磁学汇刊。

R.Shafer,W.K.Ho,Y.Yamasaki,A.Hubert,F.B.Humphrey: "Anisotropy Pinning of Domain Wall in Soft Magnetic Materials" IEEE Transactions on Magnetics. (1991)

R.Shafer、W.K.Ho、Y.Yamasaki、A.Hubert、F.B.Humphrey：“软磁材料中磁畴壁的各向异性钉扎”IEEE 磁学汇刊。

R. Schafer, W. K. Ho, J. Yamasaki, A. Hubert and F. B. Humphrey: "Anisotropy Pinning of Domain Walls in Soft Magnetic Materials" IEEE Transaction on Magnetics. (1991)

R. Schafer、W. K. Ho、J. Yamasaki、A. Hubert 和 F. B. Humphrey：“软磁材料中磁畴壁的各向异性钉扎”IEEE 磁学学报。

R.Shafer,W.K.Ho,J.Yamasaki,A.Hubert,F.B.Humphrey: "Anisotropy Pinning of Domain Walls in Soft magnetic Materials" IEEE Transaction on Magnetics. 1991

R.Shafer、W.K.Ho、J.Yamasaki、A.Hubert、F.B.Humphrey：“软磁材料中磁畴壁的各向异性钉扎”IEEE 磁学汇刊。