Development of Preparation Methods of SXM Tips with a Ultra-fine Probing Area

扫描X显微镜(SXM)是各种扫描显微镜的总称，它可以通过原子锐化的尖端跟踪样品表面，在原子尺度上描绘样品表面的形貌。当用针尖扫描表面时，在SXM操作模式中，通过保持在针尖尖端和样品表面之间互换的物理量恒定，针尖-样品距离保持恒定，并且强烈依赖于针尖-样品距离。因此，扫描针尖跟踪处理后的SXM图像显示了原子分辨率的表面结构。扫描隧道显微镜(STM)是SXM家族的代表，它利用尖端和样品表面之间的隧道电流。由于隧道电流对针尖-样品距离非常敏感，即使距离变化小至0.1A，电流也会发生显著变化，并且可以通过使用…扫描样品表面来获得原子分辨表面图像在恒定的隧道电流下，更多的n原子锐化的尖端。除了STM，扫描隧道光谱(STS)、原子力显微镜(AFM)和其他扫描显微镜也在短时间内得到了发展和进步。表面态密度可以通过隧道电流-偏置电压特性在原子分辨率上成像，原子力显微镜可以利用针尖和样品之间的作用力来描绘表面形貌，但表面XM图像的分辨率和可靠性强烈依赖于针尖的锐度和原子结构的稳定性。因此，迫切需要开发可靠的方法来编制和评估SXM TIPS。本研究利用超高真空扫描隧道显微镜(UHV-STM/STS)和原子探针场离子显微镜与场发射电子能谱(A-P FIM/Fees)相结合的方法，研究了真空和电沉积技术制备的SXM针尖的特性和可用性。用A-P FIM/FICES研究了电化学刻蚀的覆盖Ge的Ir针尖的原子和电子结构，以获得沉积Ge引起的表面态和半导体能隙的变化信息。从这个实验中可以估计Ge原子吸附在扫描针尖上的影响。用UHV-SnVSTS研究了导电聚合物的表面结构和电子结构。此外，小费覆盖了。用导电聚合物的方法研究了聚合物的详细电子态结构。较少

Scanning X microscope (SXM) is a generic term various scanning microscopes which can depict the topography of sample surfaces in atomic scale by tracing the surfaces with atomically sharpened tips. While scanning the surface with the tip, a tip-sample distance is maintained constant in the SXM operation mode by keeping a physical quantity constant, which is interchanged between the tip apex and the sample surface, and strongly depends on the tip-sample distance. Thus the SXM images processed from the scanning tip tracing show the surface structures with the atomic resolution. A scanning tunneling microscope (STM) is a representative of the SXM family, which utilizes the tunneling current passing between the tip apex and the sample surface. Since the tunneling current is extremely sensitive to the tip-sample distance, even if the distance changes as small as 0.1, A, the current changes remarkably, and the atom-resolved surface images can be obtained by scanning the sample surface with a … More n atomically sharpened tip at a constant tunneling current. In addition to the STM, scanning tunneling spectroscopy (STS), an atomic force microscope (AFM), and the other scanning microscopes have been developed and advanced in a short duration. By the STS the surface state density can be imaged in the atomic resolution from the tunneling current-bias voltage characteristics, and the AFM can depict the surface topography utilizing the force exerted between the tip and the sample.However, the resolution and the reliability of the SXM images depend strongly on the tip sharpness and the stability of the atomic structure. Thus the urgent development of reliable methods to prepare and evaluate SXM tips is indispensable. In this study, using the UHV-STM/STS and the atom-probe field ion microscope combined with a field emission electron spectroscopy (A-P FIM/FEES), the characteristics and availability of the SXM tips prepared by vacuum-and electro-deposition techniques were investigated. The atomic and electronic structures of electrochemically etched Ir tips covered with Ge were studied by the A-P FIM/FEES to get information on changes in the surface states and semiconductive energy gap induced by the deposited Ge. The effects of Ge atoms adsorbed on the scanning tips can be estimated from this experiment. The surface and electronic structures of a conductive polymer were also investigated by the UHV-SnVSTS. Furthermore, the tip covered. with the conductive polymer was developed to study the detailed structures of the electronic-states of the polymer. Less