Measurements of electronic properties of interfaces with functional nanostructures by bias-voltage non-contact atomic force microscopy/spectroscopy

通过偏置电压非接触原子力显微镜/光谱法测量功能纳米结构界面的电子特性

基本信息

项目摘要

The aim of this study is to analyze opto-electronic functional nanostructures on atomic scale, and their electronic and binding states to substrates using bias-voltage non-contact atomic force microscopy/spectroscopy. The results showed that, when we brought two pieces of condensed matter close to each other, and changed bias voltage across them, we can energetically tune the electronic states at the two surfaces through the change in electrostatic potential energy, resulting in resonating states, i.e. covalent bond. In addition, simultaneous measurements of interaction force with current between them implied that the possibility of evaluating collapse of tunneling barrier and analyzing the correlation between electronic conduction and force. Thus, we promoted the tip preparation techniques to improve the detection sensitivity of current and force. We cleaned Si tips on AFM cantilevers, and deposited Ge on them or touch heated Ge or Si substrates with the tip, and heated and/or applied bias voltage: this leads to growth of a nanopillar on the tip. We evaluated them with SEM, SAM and TEM. Moreover, we fabricated quartz force sensors and prepared Pt nanopillars on electrochemically etched Pt-It wire for the sensors. We observed π-conjugated molecules of 4,4"-diamino-p-terphenyl (DAT) deposited on Si(111)-7x7 on atomic scale and analyzed their electronic binding states by XPS. DAT has two amino groups at both ends of the linear molecule with potential to form π-conjugated molecules with a controlled length standing on Si substrates, which are vapor polymerized by depositing, e.g., 1,4-bis (4-formylstyryl) benzene alternatively with DAT. We observed that DAT was adsorbed preferentially on faulted half cells of the 7x7 reconstruction, and obtained evidence that one amino group is bound with Si substrate and the other is free at the end of DAT. Moreover, we concluded that the amino group binding with Si exhibited electric conduction to the substrate.
本研究的目的是分析原子尺度上的光电功能纳米结构,以及它们的电子和结合状态的衬底使用偏压非接触原子力显微镜/光谱。结果表明,当我们将两块凝聚态物质靠近,并改变它们之间的偏置电压时,我们可以通过静电势能的变化来对两个表面的电子态进行能量调谐,从而产生共振态,即共价键。此外,同时测量它们之间的相互作用力和电流,意味着评估隧道势垒崩溃并分析电子导电与力之间相关性的可能性。因此,我们改进了针尖制备技术,以提高电流和力的检测灵敏度。我们清洁AFM杠杆上的Si针尖,并在其上沉积Ge或用针尖接触加热的Ge或Si衬底,并加热和/或施加偏压:这导致针尖上纳米柱的生长。用扫描电镜、扫描电镜和透射电镜对其进行了分析。此外,我们制作了石英力传感器和电化学蚀刻的Pt-It线上制备的Pt纳米柱的传感器。我们在原子尺度上观察了4,4”-二氨基-对-三联苯(DAT)的π共轭分子在Si(111)-7x7上的沉积,并用XPS分析了它们的电子结合态。DAT在线性分子的两端具有两个氨基,具有形成具有受控长度的π-共轭分子的潜力,所述π-共轭分子位于Si衬底上,其通过沉积,例如,1,4-双(4-甲酰基苯乙烯基)苯与DAT交替吸附,发现DAT优先吸附在7 × 7重构的半电池上,并证明DAT末端的一个氨基与Si基底结合,另一个氨基是游离的。

项目成果

期刊论文数量(112)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
"Scanning tunneling microscopy observation of 4,4'-diamino-p-terphenyl on Si(111)7x7 at room temperature"
“室温下 Si(111)7x7 上 4,4-二氨基对三联苯的扫描隧道显微镜观察”
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Y. Kobayashi;et. al.;T. Nishimura
  • 通讯作者:
    T. Nishimura
「大気中・液中で動作する高分解能FM-AFMの開発(1)」
“开发可在空气和液体中工作的高分辨率 FM-AFM (1)”
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    S. Adachi ;et. al.;大田昌弘
  • 通讯作者:
    大田昌弘
Attaching aromatic molecules to the Si(111 )surfaces via conjugated bond
通过共轭键将芳香族分子附着到 Si(111 ) 表面
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Y.-S. Park;et. al.;村田 英幸
  • 通讯作者:
    村田 英幸
電圧印加非接触原子間力分光法による表面状態解析をめざした超高真空極低温走査型プローブ顕微鏡の開発
开发超高真空低温扫描探针显微镜,利用电压施加非接触原子力光谱进行表面状况分析
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    板 橋敦;中山 智祐;新井 豊子;富取 正彦;村田 英幸;富取 正彦;M. Tomitori;新井 豊子
  • 通讯作者:
    新井 豊子
Spectroscopic study of chemical resonating states by bias voltage nc-AFM/S
通过偏置电压 nc-AFM/S 进行化学共振态的光谱研究
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    H. Murata;A. Itabashi;T. Arai;M. Tomitori;Z. A. Ansari;T. Arai;M. Tomitori;T. Arai;Z. A. Ansari;T. Arai
  • 通讯作者:
    T. Arai
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TOMITORI Masahiko其他文献

TOMITORI Masahiko的其他文献

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{{ truncateString('TOMITORI Masahiko', 18)}}的其他基金

In-situ observation and analysis of nano contacts and junctions formation at high temperatures by a combined microscope of SEM and SPM
SEM和SPM组合显微镜对高温下纳米接触和结形成的原位观察和分析
  • 批准号:
    22656012
  • 财政年份:
    2010
  • 资助金额:
    $ 30.95万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Analysis of binding formation between solid surfaces by bias voltage non-contact atomic force microscopy/spectroscopy
通过偏置电压非接触原子力显微镜/光谱分析固体表面之间的结合形成
  • 批准号:
    20246012
  • 财政年份:
    2008
  • 资助金额:
    $ 30.95万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Study of electric field close to a sample surface utilizing the electron standing wave excited in a vacuum gap of scanning tunneling microscopy
利用扫描隧道显微镜真空间隙中激发的电子驻波研究样品表面附近的电场
  • 批准号:
    12450022
  • 财政年份:
    2000
  • 资助金额:
    $ 30.95万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of a field electron emission-scanning probe microscope with a build-up tip
开发带有构建尖端的场电子发射扫描探针显微镜
  • 批准号:
    10555008
  • 财政年份:
    1998
  • 资助金额:
    $ 30.95万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Recognition of atomic species on hetero-surfaces by atom resolved tunneling spectroscopy
通过原子分辨隧道光谱识别异质表面上的原子种类
  • 批准号:
    07405003
  • 财政年份:
    1995
  • 资助金额:
    $ 30.95万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Construction of an experimental apparatus for atom transfer between nano-regions
纳米区域间原子转移实验装置的构建
  • 批准号:
    05555007
  • 财政年份:
    1993
  • 资助金额:
    $ 30.95万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Microscopic Study of Si-Ge Heteroepitaxial Growth by STM/STS
STM/STS 硅锗异质外延生长的显微研究
  • 批准号:
    04650596
  • 财政年份:
    1992
  • 资助金额:
    $ 30.95万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Development of Preparation Methods of SXM Tips with a Ultra-fine Probing Area
具有超精细探测区域的 SXM 探针制备方法的开发
  • 批准号:
    02555004
  • 财政年份:
    1990
  • 资助金额:
    $ 30.95万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)

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下一代太阳能电池的表面和界面特性
  • 批准号:
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微电子和生物活性材料的表面和界面特性
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职业:反铁磁异质结构的表面和界面特性
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