Recognition of atomic species on hetero-surfaces by atom resolved tunneling spectroscopy

通过原子分辨隧道光谱识别异质表面上的原子种类

基本信息

项目摘要

The purpose of this study is to improve the reproducibility of scanning tunneling spectroscopy (STS) with an atomic resolution, which is called the atom resolved tunneling spectroscopy (ARTS). Since, in general, the electronic states of surfaces with various elements are locally settled by the characteristics of individual atoms on the surface, some changes in electronic states at each atomic site are possibly induced more or less. Consequently, it is expected that atomic species on sample surfaces with hybrid compositions can be recognized with an atomic resolution by prudent inspection with scanning tunneling microscopy (STM) /STS.The key point to achieve the recognition of surface atoms lies on the sharpness and electronic states at a tip apex, because the images obtained by the STS are altered by the tip conditions, easily and seriously.In this study, we have applied a build-up tip of [111] -oriented W for the ARTS of Si and Ge. The tip was treated under conditions of high temperat … More ure and high electric field. By the treatment the tip apex was surrounded by three {112} facets, and then the apex with the [111] orientation became sharper as a corner of the three facets. Furthermore, the treatment can remove impurity atoms not only from the tip apex, but also from the tip shank. Thus the sharpness and electronic states at tip apex can be reproduced by treatment. Then we have demonstrated the reproducibility of ARTS for Si (111) 7x7. The atomic change of the tip apex after the experiment was inspected by field emission microscope (FEM).Moreover, a new instrument combined with an atomic force microscope (AFM) and an electron energy analyzer has been developed to seek other possibilities of atom recognition on surfaces. The tip for AFM was treated to be cleaned and sharpened, and evaluated. By the energy analyzer, we have obtained backscattered electron energy spectra from the Si (111) surface exited by the field emission electron from the build-up tip, which showed bulk plasmon losses and an Auger peak of Si LVV.This results have demonstrated the availability of the combined new instrument for the atom recognition. Less
本研究的目的是提高原子分辨率的扫描隧道光谱(STS)的重复性,称之为原子分辨隧道光谱(ARTS)。一般来说,由于具有各种元素的表面的电子状态由表面上的单个原子的特性局部地确定,因此可能或多或少地诱导每个原子位置处的电子状态的一些变化。期望通过扫描隧道显微镜(STM)的谨慎检查,可以以原子分辨率识别具有混合组成的样品表面上的原子种类。STS.实现表面原子识别的关键在于针尖尖端的清晰度和电子态,因为STS获得的图像容易受到针尖条件的严重影响。尖端在高温条件下处理, ...更多信息 高电场。通过处理,尖端顶点被三个{112}小平面包围,然后具有[111]取向的顶点作为三个小平面的拐角变得更尖锐。此外,该处理不仅可以从尖端尖端去除杂质原子,而且还可以从尖端柄部去除杂质原子。因此,尖端尖端的锐度和电子状态可以通过处理再现。然后我们证明了对Si(111)7 × 7的ARTS的再现性。利用场发射显微镜(FEM)观察了实验后针尖上原子的变化,并将原子力显微镜(AFM)和电子能量分析仪相结合,开发了一种新的仪器,以探索表面原子识别的其他可能性。对AFM针尖进行清洁和锐化处理,并进行评价。利用能量分析仪,我们获得了组装针尖场发射电子激发的Si(111)表面背散射电子能谱,显示了体等离子体损失和Si LVV的俄歇峰,证明了组合新仪器用于原子识别的有效性。少

项目成果

期刊论文数量(8)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
M.Tomitori: "Reproducibility of scanning tunneling spectroscopy of Si (III)7x7 using a build-up tip" Surface Science. 355. 21-30 (1996)
M.Tomitori:“使用构建尖端的 Si (III)7x7 扫描隧道光谱的再现性”表面科学。
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T.Arai: "Removal of contamination and oxide layers from UHV-AFM tips" Applied Physics A. (印刷中). (1998)
T.Arai:“从 UHV-AFM 尖端去除污染物和氧化层”应用物理 A.(出版中)。
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M.Tomitori et al.: "Reproducibility of scanning tunneling spectroscopy of Si (111) 7x7 using a build-up tip" Surface Science. 355. 21-30 (1996)
M.Tomitori 等人:“使用构建尖端的 Si (111) 7x7 扫描隧道光谱的再现性”表面科学。
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M.Nagai: "Sharpening processes of scanning tunneling microscopy/scanning tunneling spectroscopy tips by thermal field treatment" Japan Jounal of Applied Physics. 36. 3844-3849 (1997)
M.Nagai:“扫描隧道显微镜/扫描隧道光谱尖端通过热处理的锐化过程”日本应用物理杂志。
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T.Arai: "Scanning Auger Electron Microscopy Evaluation and Composition Control of Cantilevers for Ultrahigh Vacuum Atomic Force Microscopy" Japan Jounal of Applied Physics. 36. 3855-3859 (1997)
T.Arai:“超高真空原子力显微镜的扫描俄歇电子显微镜评估和悬臂成分控制”日本应用物理学杂志。
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TOMITORI Masahiko其他文献

TOMITORI Masahiko的其他文献

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{{ truncateString('TOMITORI Masahiko', 18)}}的其他基金

In-situ observation and analysis of nano contacts and junctions formation at high temperatures by a combined microscope of SEM and SPM
SEM和SPM组合显微镜对高温下纳米接触和结形成的原位观察和分析
  • 批准号:
    22656012
  • 财政年份:
    2010
  • 资助金额:
    $ 21.06万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Analysis of binding formation between solid surfaces by bias voltage non-contact atomic force microscopy/spectroscopy
通过偏置电压非接触原子力显微镜/光谱分析固体表面之间的结合形成
  • 批准号:
    20246012
  • 财政年份:
    2008
  • 资助金额:
    $ 21.06万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Measurements of electronic properties of interfaces with functional nanostructures by bias-voltage non-contact atomic force microscopy/spectroscopy
通过偏置电压非接触原子力显微镜/光谱法测量功能纳米结构界面的电子特性
  • 批准号:
    17206005
  • 财政年份:
    2005
  • 资助金额:
    $ 21.06万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Study of electric field close to a sample surface utilizing the electron standing wave excited in a vacuum gap of scanning tunneling microscopy
利用扫描隧道显微镜真空间隙中激发的电子驻波研究样品表面附近的电场
  • 批准号:
    12450022
  • 财政年份:
    2000
  • 资助金额:
    $ 21.06万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of a field electron emission-scanning probe microscope with a build-up tip
开发带有构建尖端的场电子发射扫描探针显微镜
  • 批准号:
    10555008
  • 财政年份:
    1998
  • 资助金额:
    $ 21.06万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Construction of an experimental apparatus for atom transfer between nano-regions
纳米区域间原子转移实验装置的构建
  • 批准号:
    05555007
  • 财政年份:
    1993
  • 资助金额:
    $ 21.06万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Microscopic Study of Si-Ge Heteroepitaxial Growth by STM/STS
STM/STS 硅锗异质外延生长的显微研究
  • 批准号:
    04650596
  • 财政年份:
    1992
  • 资助金额:
    $ 21.06万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Development of Preparation Methods of SXM Tips with a Ultra-fine Probing Area
具有超精细探测区域的 SXM 探针制备方法的开发
  • 批准号:
    02555004
  • 财政年份:
    1990
  • 资助金额:
    $ 21.06万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
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