Analysis of binding formation between solid surfaces by bias voltage non-contact atomic force microscopy/spectroscopy

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We improved our method of bias nc-AFM/S, and applied this to analysis of binding formation between a surface and a tip, and of electronic states between them. For instance, on H-terminated Si(111) 7×7, the force between the Si adatom terminated with H and a Si tip is weaker and the current between them is less. The force between them, where the Si rest atom neighboring the Si adatom is terminated with H, is stronger and the current is larger. This indicates that the force between Si and Si strongly depends on surface local density of states as well as electron tunneling process does.