Control of Electrical Conduction Properties of Chalcogenide Glasses by Ion Implantation

本研究以离子注入前后硫系玻璃电子结构的变化为依据，探讨离子注入对硫系玻璃电子性质的影响。所获得的结果总结如下：1.用物理方法注入N离子是不可能的。给出了体系中任何组成元素都不能形成稳定氮化物的原因之一.通过光掺杂可以将大量的银离子掺入到硫系玻璃中。掺入导致材料的折射率发生较大变化.提出了利用光掺杂对玻璃电子性质进行灵敏控制的可能性，由于离子注入可作为低温非平衡条件下杂质掺杂的方法之一，并具有控制材料结构和成分空间分布的能力，为了设计具有独特功能的材料，不仅将该方法应用于硫族化物玻璃，而且应用于其它各种无机材料似乎是重要的。

In this project, effect of ion implantation upon the electronic properties of chalcogenide glasses was examined in terms of changes in the electronic structure before after the implantation. Obtained results were summarized as follows.1. Incorporation of N ion into In-Se amorphous semiconductor was found to be impossible by the implantation of physical process. One of the reason was given as which the any constituent element in the system could not form the stable nitride.2. Considerable amount of Ag ion could be incorporated into chalcogenide glass by the photo-doping process. The incorporation resulted in the large changes in refractive index of the material.3. It was suggested that the sensitive control of electronic properties of glasses was possible by means of the photo-doping.Since the ion implantation can be regarded as one of the method for impurity doping under non-equilibrated condition at low temperature, and have an ability for control the spatial distribution of structure and composition of the material, it seems to be important to apply the method not only to chalcogenide glasses but also to other various inorganic materials, in order to design the material having unique function.