Control of Electrical Conduction Properties of Chalcogenide Glasses by Ion Implantation

在本项目中，通过离子注入前后玻璃电子结构的变化，研究了离子注入对硫系玻璃电子性质的影响。所获得的研究结果总结如下。通过物理过程的注入，发现在In-Se非晶态半导体中不可能掺入N离子。其中一个原因是体系中的任何组成元素都不能形成稳定的氮化物。通过光掺杂可以在硫化物玻璃中掺入相当数量的银离子。掺杂导致材料的折射率发生较大变化。由于离子注入可以作为低温非平衡条件下杂质掺杂的一种方法，并且具有控制材料结构和组成的空间分布的能力，因此，不仅将该方法应用于硫系玻璃，而且还应用于其他各种无机材料，以设计出具有独特功能的材料，这似乎是重要的。

In this project, effect of ion implantation upon the electronic properties of chalcogenide glasses was examined in terms of changes in the electronic structure before after the implantation. Obtained results were summarized as follows.1. Incorporation of N ion into In-Se amorphous semiconductor was found to be impossible by the implantation of physical process. One of the reason was given as which the any constituent element in the system could not form the stable nitride.2. Considerable amount of Ag ion could be incorporated into chalcogenide glass by the photo-doping process. The incorporation resulted in the large changes in refractive index of the material.3. It was suggested that the sensitive control of electronic properties of glasses was possible by means of the photo-doping.Since the ion implantation can be regarded as one of the method for impurity doping under non-equilibrated condition at low temperature, and have an ability for control the spatial distribution of structure and composition of the material, it seems to be important to apply the method not only to chalcogenide glasses but also to other various inorganic materials, in order to design the material having unique function.