Control of Electrical Conduction Properties of Chalcogenide Glasses by Ion Implantation

本课题研究了离子注入对硫系玻璃电子性能的影响，通过离子注入前后电子结构的变化考察了离子注入对硫系玻璃电子性能的影响。所得结果总结如下：1。通过物理过程的注入，发现N离子不可能掺入In-Se非晶半导体中。给出了体系中任何组成元素都不能形成稳定的氮化物的原因之一。通过光掺杂工艺可以将大量Ag离子掺入硫系玻璃中。这种掺入使材料的折射率发生了很大的变化。结果表明，光掺杂可以灵敏地控制玻璃的电子性能。由于离子注入可以看作是低温非平衡条件下杂质掺杂的方法之一，并且具有控制材料结构和组成的空间分布的能力，因此将该方法不仅应用于硫系玻璃，而且应用于其他各种无机材料，以设计具有独特功能的材料显得很重要。

In this project, effect of ion implantation upon the electronic properties of chalcogenide glasses was examined in terms of changes in the electronic structure before after the implantation. Obtained results were summarized as follows.1. Incorporation of N ion into In-Se amorphous semiconductor was found to be impossible by the implantation of physical process. One of the reason was given as which the any constituent element in the system could not form the stable nitride.2. Considerable amount of Ag ion could be incorporated into chalcogenide glass by the photo-doping process. The incorporation resulted in the large changes in refractive index of the material.3. It was suggested that the sensitive control of electronic properties of glasses was possible by means of the photo-doping.Since the ion implantation can be regarded as one of the method for impurity doping under non-equilibrated condition at low temperature, and have an ability for control the spatial distribution of structure and composition of the material, it seems to be important to apply the method not only to chalcogenide glasses but also to other various inorganic materials, in order to design the material having unique function.