Exposure assessment and health surveillance in compound semiconductor production

化合物半导体生产中的暴露评估和健康监测

基本信息

  • 批准号:
    03670271
  • 负责人:
  • 金额:
    $ 1.28万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1991
  • 资助国家:
    日本
  • 起止时间:
    1991 至 1992
  • 项目状态:
    已结题

项目摘要

1. Exposure assessment by working environment and personal exposure sampling : In a gallium arsenide wafers manufacturing plant, arsenic and gallium concentrations of area and personal samples were measured. Processes were Liquid Encapsulated Czochralski (LEC), ingot slicing, wafer lapping, wafer polishing, and Metal Organic Vapor Phase Epitaxy. Arsenic/gallium concentrations in most processes were extremely low. However, exposure levels to elemental arsenic of the LEC cleaning workers were relatively high. The ingot slicing workers could be exposed to high concentrations of gallium arsenide.2. Exposure assessment by biological monitoring : Biological monitoring of arsenic exposure in gallium arsenide wafer manufacturers was performed by chemical species determination of arsenic in urine and hair. It was suggested that urinary inorganic arsenic concentrations of the ingot slicing workers elevated.3. Health surveillance : Hematological, biochemical and immunological tests and determination of urinary porphyrin metabolites (coproporphyrins) were performed to assess the health status of the workers. There were no exposure-related change.4. Conclusion : The LEC cleaning and the ingot slicing processes were relatively high exposure levels to elemental arsenic and gallium arsenide. However, the health status of the workers could keep good if the proper control technology was used.
1.通过工作环境和个人暴露采样进行暴露评估:在一家砷化镓晶片制造厂,测量了区域和个人样本中的砷和镓浓度。工艺包括液封直拉法(LEC)、钢锭切片、晶片研磨、晶片抛光和金属有机气相外延。大多数工艺中的砷/镓浓度极低。然而,LEC清洁工人的元素砷暴露水平相对较高。钢锭切片作业人员可接触高浓度的砷化镓。通过生物监测进行暴露评估:通过测定尿液和头发中砷的化学形态,对砷化镓晶片制造商的砷暴露进行生物监测。提示钢锭切片作业工人尿无机砷浓度升高。健康监测:对作业工人进行血液学、生化、免疫学检查和尿卟啉代谢物测定,以评估作业人员的健康状况。没有与暴露相关的变化。结论:LEC清洗和钢锭切片过程对元素砷和砷化镓的暴露水平较高。然而,如果使用适当的控制技术,工人的健康状况是可以保持良好的。

项目成果

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OMAE Kazuyuki其他文献

OMAE Kazuyuki的其他文献

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{{ truncateString('OMAE Kazuyuki', 18)}}的其他基金

Indium lung disease: Natural history and underlying mechanism
铟肺疾病:自然史和潜在机制
  • 批准号:
    23249033
  • 财政年份:
    2011
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Lung effects of indium compounds on indium-exposed workers : A cohort study
铟化合物对暴露于铟的工人的肺部影响:一项队列研究
  • 批准号:
    20249039
  • 财政年份:
    2008
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
DNA damage in human lymphocytes in vitro exposed to combined metals
体外暴露于复合金属中的人类淋巴细胞 DNA 损伤
  • 批准号:
    18390185
  • 财政年份:
    2006
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A cross-sectional study of early effects on the lung in workers exposed to indium, a suspected strong inducer of pneumoritis
一项关于接触铟(一种疑似肺炎强诱因)的工人对肺部早期影响的横断面研究
  • 批准号:
    15390191
  • 财政年份:
    2003
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of early elucidaion of chemical substance biotransformation with DMA chip
DMA芯片开发早期阐明化学物质生物转化
  • 批准号:
    12307010
  • 财政年份:
    2000
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
A mollecular epidemiological study of genes enrolled in the development of athoroscrelosis or hypertension
对参与动脉粥样硬化或高血压发展的基因进行分子流行病学研究
  • 批准号:
    10470098
  • 财政年份:
    1998
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Roles of nitric oxide and neuropeptides in the development of lung injuries induced by chemical irritants.
一氧化氮和神经肽在化学刺激物引起的肺损伤发展中的作用。
  • 批准号:
    08670401
  • 财政年份:
    1996
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Evaluation of the pulmonary inhalation toxicity of diborane
乙硼烷的肺部吸入毒性评价
  • 批准号:
    06670390
  • 财政年份:
    1994
  • 资助金额:
    $ 1.28万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

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砷化镓量子点的记忆增强纠缠分布
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    2012017
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    2020
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    $ 1.28万
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Optical Functions For Gallium Arsenide Bismuth Semiconductor Alloys
砷化镓铋半导体合金的光学功能
  • 批准号:
    481275-2015
  • 财政年份:
    2015
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    $ 1.28万
  • 项目类别:
    Alexander Graham Bell Canada Graduate Scholarships - Master's
Materials engineering proof of concept to achieve the simultaneous goals of low optical loss and low Vp in DP-QPSK electro-optic modulators based on gallium arsenide by u2t Photonics UK Ltd.
u2t Photonics UK Ltd 进行的材料工程概念验证,可在基于砷化镓的 DP-QPSK 电光调制器中同时实现低光学损耗和低 Vp 的目标。
  • 批准号:
    710234
  • 财政年份:
    2012
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    GRD Proof of Concept
Piezospectroscopy and ab-initio calculations of carbon-oxygen complexes in gallium arsenide
砷化镓中碳氧复合物的压电光谱和从头计算
  • 批准号:
    188697224
  • 财政年份:
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SBIR Phase I: Large Aperture, Periodically-Structured Gallium Arsenide for Infrared and THz Wavelength Conversion
SBIR 第一阶段:用于红外和太赫兹波长转换的大孔径、周期性结构砷化镓
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    412164-2010
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CAREER: Silicon and Gallium Arsenide Nanowire Devices
职业:硅和砷化镓纳米线器件
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    0093552
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