Surface-Based Point Defect Manipulation in Semiconducting Oxides
Surface-Based Point Defect Manipulation in Semiconducting Oxides
批准号:
1709327
负责人:
Edmund Seebauer
金额:
$64.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-06-01 至 2023-05-31
中文摘要
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英文摘要
NON-TECHNICAL DESCRIPTION: Although ceramic semiconductors such as titanium dioxide and zinc oxide often find use in consumer sunscreens, they also have other important applications such as ultraviolet-emitting optical devices and gas sensors. For device and sensor applications, the material's performance is strongly influenced by defects in the regularly-ordered atomic structure. These defects can be mobile, and nearby surfaces can inject or withdraw them from the solid bulk. Experiments and computations are being combined to examine how this chemistry is affected by the inherent tendency of the surface to accumulate excess positive or negative charge, and by the presence of liquids such as water. Experiments entail the exposure of titanium dioxide or zinc oxide to a gas or liquid containing isotopically-labeled atoms specially by weight, and subsequent measurement of the buildup of the label within the solid. Computations employ a range of modeling techniques rooted in quantum calculations. The project opens rich new possibilities for manipulating defect behavior in applications. Using liquids near room temperature is especially exciting because of greatly reduced cost and ease of material manufacturing compared to conventional methods that often employ gases and heating to hundreds of degrees. The project also develops educational materials for middle school and high school students. A significant number of undergraduate researchers participate in the research, and several activities to promote the importance of ethics in science and engineering are being pursued. TECHNICAL DETAILS: Reactions of ceramic semiconductor surfaces with bulk point defects such as interstitial atoms exhibit rich chemistry that is poorly understood despite that it helps to regulate defect types and concentrations. Experiments and computations are combined to examine how that chemistry is affected by surface polarity, which describes the tendency of the surface to accumulate excess positive or negative charge. The project also examines liquid-enhanced defect injection from the surface into the bulk. Investigations include zinc oxide of varying polar and nonpolar crystallographic orientations as well as nonpolar titanium dioxide. Experiments entail exposure of the solid to a gas or liquid containing isotopically labeled atoms, and subsequent measurement of the spatial distribution of the label within the solid. For gaseous ambients, interstitial atoms of both oxygen and titanium or zinc are being examined in the presence of foreign adsorbates such as nitrogen, sulfur and chlorine. For aqueous liquids, oxygen interstitial defects are being examined under varying pH, photostimulation intensity and solution additives. Computations employ a hierarchy of mathematical modeling rooted in quantum calculations to provide useful atomistic insights. The project opens a rich new domain of surface behavior, and provides new means for manipulating defect behavior to improve photocatalysts, ultraviolet emitters and gas sensors.
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Microkinetic model for reaction and diffusion of titanium interstitial atoms near a TiO 2 (110) surface
TiO 2 (110) 表面附近钛间隙原子反应和扩散的微动力学模型
DOI:
10.1039/c7cp07802a
发表时间:
2018
期刊:
Physical Chemistry Chemical Physics
影响因子:
3.3
作者:
[Gilliard-AbdulAziz, Kandis Leslie, Seebauer, Edmund G.]
通讯作者:
Seebauer, Edmund G.
Electric Field Manipulation for Improved Rates of Photocatalysis by Mesoporous TiO 2
电场调控提高介孔 TiO 2 光催化速率
DOI:
10.1021/acs.jpcc.1c09020
发表时间:
2022
期刊:
The Journal of Physical Chemistry C
影响因子:
--
作者:
[Huang, Qilong, Seebauer, Edmund G.]
通讯作者:
Seebauer, Edmund G.
First-principles description of oxygen self-diffusion in rutile TiO 2 : assessment of uncertainties due to enthalpy and entropy contributions
金红石 TiO 2 中氧自扩散的第一性原理描述:评估因焓和熵贡献引起的不确定性
DOI:
10.1039/c8cp02741b
发表时间:
2018
期刊:
Physical Chemistry Chemical Physics
影响因子:
3.3
作者:
[Jeong, Heonjae, Seebauer, Edmund G., Ertekin, Elif]
通讯作者:
Ertekin, Elif
Manipulation of native point defect behavior in rutile TiO 2 via surfaces and extended defects
通过表面和扩展缺陷控制金红石 TiO 2 中的原生点缺陷行为
DOI:
10.1088/1361-648x/aa89ba
发表时间:
2017
期刊:
Journal of Physics: Condensed Matter
影响因子:
--
作者:
[Gilliard, Kandis Leslie, Seebauer, Edmund G]
通讯作者:
Seebauer, Edmund G
Elucidating the reaction and diffusion network of oxygen interstitial atoms near a TiO2(1 1 0) surface
阐明 TiO2(1–1–0) 表面附近氧间隙原子的反应和扩散网络
DOI:
10.1016/j.apsusc.2018.11.123
发表时间:
2019
期刊:
Applied Surface Science
影响因子:
6.7
作者:
[Gilliard-AbdulAziz, Kandis Leslie, Seebauer, Edmund G.]
通讯作者:
Seebauer, Edmund G.
共 6 条
Harnessing Electrochemically-Injected Interstitial Atoms in Oxide Semiconductors for Doping and Purification
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批准号:2322121
-
项目类别:Continuing Grant
-
资助金额:$60.0万
-
财政年份:2023
-
负责人:Edmund Seebauer
-
依托单位:
Methods for Defect Manipulation in Semiconducting Oxides
-
批准号:1306822
-
项目类别:Standard Grant
-
资助金额:$60.0万
-
财政年份:2013
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负责人:Edmund Seebauer
-
依托单位:
Surface- and Photo-Based Methods for Defect Manipulation in Semiconducting Oxides
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批准号:1005720
-
项目类别:Continuing Grant
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资助金额:$40.5万
-
财政年份:2010
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负责人:Edmund Seebauer
-
依托单位:
New Methods for Defect Manipulation in Semiconducting Oxides
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批准号:0704354
-
项目类别:Continuing Grant
-
资助金额:$33.0万
-
财政年份:2007
-
负责人:Edmund Seebauer
-
依托单位:
Surface Diffusion and Ordering Processes Exploited for Directed Self-Assembly Using Amorphous Semiconductors
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批准号:0203237
-
项目类别:Continuing Grant
-
资助金额:$25.8万
-
财政年份:2002
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负责人:Edmund Seebauer
-
依托单位:
Surface Diffusion on Semiconductors: Thermal and Beam-Enhanced
-
批准号:9806329
-
项目类别:Standard Grant
-
资助金额:$28.0万
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财政年份:1998
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负责人:Edmund Seebauer
-
依托单位:
Studies of Surface Diffusion on Semiconductor Materials
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批准号:9506419
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项目类别:Standard Grant
-
资助金额:$27.0万
-
财政年份:1995
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负责人:Edmund Seebauer
-
依托单位:
Experimental Studies of Surface Diffusion on Semiconductor Materials
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批准号:9121917
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项目类别:Continuing Grant
-
资助金额:$23.75万
-
财政年份:1992
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负责人:Edmund Seebauer
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依托单位:
Studies of the Surface Chemistry of GaAs Deposition with Surface Second Harmonic Generation
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批准号:8815964
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项目类别:Standard Grant
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资助金额:$4.4万
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财政年份:1989
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负责人:Edmund Seebauer
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依托单位:
Presidential Young Investigators Award: Surface Chemistry In Semiconductor Thin Film Deposition
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批准号:8857037
-
项目类别:Continuing Grant
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资助金额:$27.45万
-
财政年份:1988
-
负责人:Edmund Seebauer
-
依托单位:
国内基金
海外基金
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