Development of Ultra-High-Speed and Ultra-Stable Single-Mode Semiconductor Lasers Based on Gain-Couplek Distributed Optical feedback

基于增益耦合分布式光反馈的超高速、超稳定单模半导体激光器的研制

• 批准号: 03505001
• 负责人: TADA Kunio
• 金额: $ 22.4万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (A)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03505001/
• 关键词: Semiconductor laser; Distributed feedback laser; DFB laser; Gain coupling; Corrugated active layer; Absorptive grating; 6ow chirping short optical pulse; Single-longitudinal-mode yield; 多重量子井戸; 半導体レ-ザ; 分布帰還型レ-ザ; DFBレ-ザ; 超高速動作; 超低チャ-ピング

1. Theoretical Study of Gain-Coupled (GC) Distributed-Feedback (DFB) Semiconductor Lasers : Theoretical analyses have been conducted on such issues as polarization dependence of coupling coefficients, linewidth enhancement factor, and enhancement of external efficiency by asymmetric facet coating. A number of important results have been obtained.2. Quantum Well GC DFB Lasers : By using organo-metallic vapor phase epitaxy (OMVPE) of a single quantum well (SQW) on a substrate Having a diffraction grating corrugation, we have obtained an SQW whose thickness changes periodically with the grating pitch. We have confirmed the existence of the gain coupling in this structure, and achieved room-temperature CW oscillation with 30mA threshold, 47dB side-mode suppression ratio (SMSR), and high single-longitudinal-mode (SLM)yield.3. InGaAsP/InP Long-Wavelength GC DFB Lasers : By utilizing OMVPE and reactive (RIE), we have succeeded in fabricating corrugated active layers of inGaAsP quaternary mate … More rials, and made fabrication of long-wavelength GC DFB lansers possible for the first time. The threshold current of room-temperature CW operation in these lasers was as low as 12-16mA, and SMSR was as large as 55dB (which is the largest among ever reported values). Minimum spectral linewidth in a 600um device was 2.35MHz. Gain switching operation of these devices resulted in option short pulses with and 0.15nm (time-averaged) spectral width. The effective linewidth enhancement factor calculated from these data is 0.76, a remarkably low value. The spectral width at -20dB under 2.4GHz direct modulation was also measured, and was as small as 0.2nm.4. Absorptive Grating GC DFB Lasers : We have determined an optimum duty Factor of the periodic absorptive Grating theoretically. We have also proposed use of conduction-type inversion for the adsorptive region in order to suppress nonlinear operation due to the saturable nature of the aborption. These measures have been applied to a multiple quantum well (MQW) GaAs/GaAlAs lasers, and resulted in low threshold current of 8.5mA, high differential efficiency of 0.8mW/mA, and large SMSR of 47dB in the fabricated device. Despite the fact that the lasers had as-cleaved facets, the yield of SLM operation was very high, i.e., 75%-95%. The minimum spectral linewidth of 2.2MHz measured in a 200um device was very narrow. Less

1.增益耦合（GC）分布反馈（DFB）半导体激光器的理论研究：对耦合系数的偏振依赖性、线宽增强因子和非对称端面镀膜提高外效率等问题进行了理论分析。取得了一系列重要成果.量子阱GC-DFB激光器：利用有机金属气相外延（OMVPE）技术在具有衍射光栅的衬底上生长单量子阱（SQW），获得了厚度随光栅间距周期性变化的SQW。我们证实了这种结构中增益耦合的存在，并实现了室温连续振荡，阈值为30 mA，边模抑制比（SMSR）为47 dB，并且具有较高的单纵模（SLM）成品率. InGaAsP/InP长波长GCDFB激光器：利用OMVPE和反应刻蚀（RIE）技术，成功地制备了InGaAsP四元组份的波纹有源层 ...更多信息 rials，并首次使长波长GC DFB激光器的制造成为可能。这些激光器室温连续工作的阈值电流低至12- 16 mA，SMSR高达55 dB（这是迄今报道的最大值）。600 μ m器件的最小谱线宽度为2.35MHz。这些器件的增益开关操作导致了可选的短脉冲和0.15nm（时间平均）的光谱宽度。从这些数据计算的有效线宽增强因子为0.76，一个非常低的值。测量了2.4GHz直接调制下-20dB处的谱宽，谱宽小至0.2nm.吸收光栅GC-DFB激光器：从理论上确定了周期吸收光栅的最佳占空比。我们还提出了使用传导型反转的吸附区域，以抑制非线性操作，由于饱和性质的abortation。这些措施已应用于多量子阱GaAs/GaAlAs激光器，器件的阈值电流为8.5mA，微分效率为0.8mW/mA，SMSR为47 dB。尽管激光器具有解理刻面，SLM操作的产率非常高，即，75%-95%在200 μ m器件上测得的最小谱线宽度为2.2MHz，非常窄。少

项目成果

Yi Luo: "GaAlAs/GaAs quantum well gain-coupled distributd feedback lasers" Extended Abst.,1991(23rd) International Conference on Solid State Devices and Materials(SSDM'91),PC7-L1. 733-734 (1991)

罗毅：“GaAlAs/GaAs量子阱增益耦合分布式反馈激光器”扩展摘要，1991(23rd)国际固态器件与材料会议(SSDM91)，PC7-L1。

Yoshiaki Nakano: "Gain-coupled DFB lasers in GaAs and Inp based materials" Technical Digest,8th International Conference on Integrated Optics and Optical Fiber Communication (IOOC'91)/17th European Conferenec Optical Communication(ECOC'91),MO.Al.l. 2. 1-8

Yoshiaki Nakano：“GaAs 和 Inp 基材料中的增益耦合 DFB 激光器”技术文摘，第八届集成光学和光纤通信国际会议 (IOOC91)/第十七届欧洲光通信会议 (ECOC91)，MO.Al。

Yi Luo, Hong-Li Cao, Machio Dobashi, Haruo Hosomatsu, Toshiaki Nakano, and Kunio Tada: "Fabrication of GaAlAs/GaAs single quantum well gain-coupled distributed feedback lasers" Proceedings of Second International Meeting on Advanced Processing and Charact

Yi Luo、Hong-Li Cao、Machio Dobashi、Haruo Hosomatsu、Toshiaki Nakano 和 Kunio Tada：“GaAlAs/GaAs 单量子阱增益耦合分布反馈激光器的制造”第二届先进加工与特性国际会议论文集

Yoshiaki Nakao, Yi Luo, and Kunio Tada,: "(Invited Paper) Laser diodes with gain-coupled distributed optical feedback" Proceedings of SPIE. vol. 1418, June. 250-260 (1991)

Yoshiaki Nakao、Yi Luo 和 Kunio Tada，“（特邀论文）具有增益耦合分布式光学反馈的激光二极管”SPIE 论文集。

Yoshiaki Nakano and Kunio Tada: "Short wavelength, distributed feedback semiconductor lasers, including those based on the gain coupling" Asia-Pacific Engineering Journal (Part A). vol.18 no.1 September. 37-58 (1991)

Yoshiaki Nakano 和 Kunio Tada：“短波长、分布式反馈半导体激光器，包括基于增益耦合的激光器”《亚太工程杂志》（A 部分）。