Optical properties of modified potential quantum micro structures and their application to optical modulationlswiching devices

改性势量子微结构的光学特性及其在光调制器件中的应用

• 批准号: 07455034
• 负责人: TADA Kunio
• 金额: $ 4.42万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455034/
• 关键词: Quantum well with mass dependent width; Polarization independent optical modulation; lnGaAs pseudo substrate; lnGaAs; lnAlAs; lnP; Coupled quantum well; SEED; Traveling wave optical modulator; Five-step asymmetric coupled quantum well; 歪み量子井戸

SUMMARY OF RESEARCH RESULTS1.Development of short wavelength (0.8mum)completely-polarization-independent optical modulatorWe made an InGaAs pseudo substraste with larger lattice constant than GaAs on a GaAs substrate by sandwiching GaAs/InGaAs strained super lattice buffer layr between them. On its top, we grew GaAs tensilestained quantum wells with mess-dependent width successfully. The wafer was made into optical intensity modulators and their optical modulation properties were characterized. Consequently, we have achieved complete polarization-independent optical modulation with extinction ratio larger than 10 dB over the wavelength range of 28 nm around 0.8mum band.2.Epitaxial growth technique toward long wavelength (1.55mum) completely-polarization-independent optical modulatorWe studied molecular beam epitaxy of lnGaAs/lnAlAs strained quantum wells on lnP substrates, aiming at completely-polarization-independent optical modulators based on the same principle as above in 1.55mum o … More ptical communication wavelength band. By optimizing growth temperature and by carefully selecting indium source materials and InP substrates, epitaxial growth of strained quantum wells with excellent quality was made possible. Next, we grew double heterostructure, made it into ridge waveguide configuration, and measured its propagation Ioss by using the Fabry-Perot interference.3.Surface vertical optical switches with low insertion lossWe reduced remaining insertion loss at ON atate in surface-vertical optical bistable devices, namely, SEEDs, by utillzing effective blue shift of band edges in coupled quantum well structures. we also showed, We also showed, experimentally and theoretically, that not only the remaining loss but also the contrast between ON and OFF atate could be improved throved through the use of asymmetric triple coupled quantum wells. On the other hand, utilization of large absorption change in low electric field region was made possible by a special symetric coupled quantum wells. We fabricated transmission-type symmetric SEEDs by making use of a modified potential asymmetric coupled quantum wells and accomplished optical bistable operation in them.4.Traveling wave quantum well high speed optical modulatorWe fabricated a GaAs directional coupler optical modulator with coplanar traveling-wave electrodes, and characterterized its optical modulation performance using the swept-frequency method. Bandwidth of 22 GHz was achieved.5.Modified-potential five-step asymmetric coupled quantum wellsWe found a special quantum well structure where a large index change is obtainable at low electric field without exciting red-shift of absorption edges. Less

研究结果总结短句来源在GaAs衬底上夹入GaAs/InGaAs应变超晶格缓冲层，制备出晶格常数大于GaAs的InGaAs伪衬底。在其顶部，我们成功地培养了具有混沌依赖宽度的砷化镓张力染色量子阱。将硅片制成光强调制器，并对其光调制特性进行了表征。因此，我们已经实现了完全的偏振无关的光调制，消光比大于10 dB，波长范围为28 nm，约0.8m波段2。长波（1.55 μ m）完全不依赖偏振光调制器的外延生长技术我们研究了lnGaAs/lnAlAs应变量子阱在lnP衬底上的分子束外延，目的是基于相同的原理在1.55 μ m到1.55 μ m以上光通信波段实现完全不依赖偏振光调制器。通过优化生长温度，精心选择铟源材料和InP衬底，可以实现高质量应变量子阱的外延生长。其次，我们培育了双异质结构，将其制成脊波导构型，并利用法布里-珀罗干涉测量了其传播损耗。低插入损耗的表面垂直光开关我们利用耦合量子阱结构中有效的带边蓝移，降低了表面垂直光双稳器件（即种子）ON状态下的剩余插入损耗。我们还从实验和理论上证明，通过使用非对称三耦合量子阱，不仅可以改善剩余损耗，还可以改善ON和OFF状态之间的对比度。另一方面，利用一种特殊的对称耦合量子阱使得低电场区域的大吸收变化成为可能。我们利用改进的势不对称耦合量子阱制备了传输型对称种子，并在其中实现了光双稳操作。制作了一种具有共面行波电极的GaAs定向耦合器光调制器，并利用扫频法对其光调制性能进行了表征。带宽达到22ghz。修正电位五步不对称耦合量子阱我们发现了一种特殊的量子阱结构，在低电场下，在不激发吸收边红移的情况下，可以获得较大的指数变化。少

项目成果

Jia-Pang Pang: "GaAs/AlGaAs directional coupler high speed optical modulator with asymmetric coplanar strip trave ling wave electrode" to appear in Second Optoelectronics and Communications Conference (OECC'97). (1997)

庞嘉鹏：“具有非对称共面带状行波电极的GaAs/AlGaAs定向耦合器高速光调制器”将出现在第二届光电子与通信会议(OECC97)上。

Hao Feng, Masaki Sugiyamza, Jia-Pang Pang, Kunio Tada, and Yoshiaki Nakano: ""Analysis of five-step asymmetric coupled quantum wells for large field-induced refractive index change"" Tech.Digest, the Pacific Rim Conference on Lasers and Electro-Optics (CL

冯浩、Masaki Sugiyamza、Jia-Pang Pang、Kunio Tada 和 Yoshiaki Nakano：“大场诱导折射率变化的五步不对称耦合量子阱分析”Tech.Digest，环太平洋激光与光学会议

Hao Feng, Kunio Tada, and Yoshiaki Nakano: ""Polarization-independent large field-induced refractive index change in a strained five-step GaAs-InAlGaAs asymmetric coupled quantum wells"" Applied Physics Letters. (to appear) in.

郝峰、Kunio Tada 和 Yoshiaki Nakano：“应变五步 GaAs-InAlGaAs 不对称耦合量子阱中与偏振无关的大场引起的折射率变化”，《应用物理快报》。

Atsushi Hamakawa, Kiyoteru Ishihara, Takeharu Yamaguchi, Yoshiaki Nakano, Kuniko Tada, Kazuaki Nishikata, and Masanori Irikawa: ""InGaAs InAlAs/InP1.55mum quantum wells with mass-dependent width -a useful building block for polarization-independent optica

Atsushi Hamakawa、Kiyoteru Ishihara、Takeharu Yamaguchi、Yoshiaki Nakano、Kuniko Tada、Kazuaki Nishikata 和 Masanori Irikawa：“具有质量相关宽度的 InGaAs InAlAs/InP1.55mum 量子阱 - 偏振无关光学器件的有用构建模块

Yi Luo: "A novel monolithically integrated device composed of MOW GaAlAs/GoAs gain-coupled DFB laser and electro-absorption modulator" Chinese Journal of Semiconductors. 17・5. 347-352 (1996)

罗毅：“一种由MOW GaAlAs/GoAs增益耦合DFB激光器和电吸收调制器组成的新型单片集成器件”，半导体学报17・5（1996）。