Development of DFB Lasers with New Structures for Complete Single-Longitudinal-Mode Oscillation
Development of DFB Lasers with New Structures for Complete Single-Longitudinal-Mode Oscillation
批准号:
60850009
负责人:
TADA Kunio
金额:
$5.76万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research
财政年份:
1985
资助国家:
日本
项目状态:
已结题
起止时间:
1985 至 1986
中文摘要
点击翻译按钮获取中文摘要
英文摘要
As a primary step to develop 0.8 <mu> m range distributed feedback (DFB) lasers with modulated stripe width structure, the head investigator and coworkers fabricated and studied GaAlAs/GaAs ridge waveguide DFB lasers in 1985 academic year and achieved the lowest threshold current and high differential quantum efficiency at that time. Possibility of obtaining feasible DFB lasers in the short wavelength regime was thereby shown, yet it was found from a precise lateral mode analysis that this waveguide structure is not necessarily favorable to liquid phase epitaxy (LPE). In 1986 academic year, double channel planar buried heterostructure was instead employed in fabricating GaAlAs/GaAs DFB lasers for the first time, as a more appropriate waveguide structure for LPE. Significant improvements in characteristics were attained in the resulting devices, such as threshold current of 12mA which was the lowerst ever reported. Various stripe width modulation schemes were then applied to the develop … More ed devices, where complete single-longitudinal= mode (SLM) oscillation was in practice accomplished, being consistent with theoretical predictions.Investigator Kamiya studied material physics of semiconductor lasers toward another evolution of their functions. He determined carrier lifetime and recombination coefficients in semiconductors making use of a phase shift method. The effects of Auger recombination on temperature dependence of bistable characteristics in semiconducor lasers were also discussed. These studies contributed to obtaining detailed rate equations describing semiconductor lasers, and acquiring increased accuracy in material parameters.Investigator Nagai examined SLM operation of DFB lasers by means of both facets cleaved structure. He discussed theoretically and experimentally SLM probability and temperature range of SLM operation in 1.3 and 1.5 <mu> m devices with cleaved facets, thus contributing to clarification of the effectiveness of the cleaved facet structure.Investigator Akiba studied SLM oscillation by quarter-wave-shifted structure. Through detailed theoretical examination and experimental observation of 1.5 <mu> m range quarter-wave-shifted devices, he established design principles and fabrication techniques, thereby contributed toward practical applications of such lasers. Less
期刊论文(62)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Yoshiaki NAKANO: IEEE Journal of Quantum Electronics.
中野义明:IEEE 量子电子杂志。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Yoshiaki NAKANO: "Lateral Analysis of GaAlAs/GaAs Ridge Waveguide Distributed Feedback Lasers" Annual Report of the Engineering Research Institute, Faculty of Engineering, University of Tokyo. 45. 71-76 (1986)
Yoshiaki NAKANO:《GaAlAs/GaAs 脊波导分布式反馈激光器的横向分析》东京大学工学院工程研究所年度报告。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
J.Pietzsch: Applied Physics A. 42. 91-102 (1987)
J.Pietzsch:应用物理学 A. 42. 91-102 (1987)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
J. Pietzsch: "Determination of Carrier Density Dependent Lifetime and Quantum Efficiency in Semiconductors with a Photoluminescence Method" Applied Physics A. 42. 91-102 (1987)
J. Pietzsch:“用光致发光方法测定半导体中载流子密度相关的寿命和量子效率”应用物理 A. 42. 91-102 (1987)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
IEEE Journal of Quantum Electronics. (1985)
IEEE 量子电子杂志。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 29 条
Research on Five-Layer Asymmetric Coupled Quantum Wells and Their Application to Ultra-Fast and Ultra-Low Voltage Optical Modulators and Switches
-
批准号:11450028
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$9.34万
-
财政年份:1999
-
负责人:TADA Kunio
-
依托单位:
Research on Optical Modulators and Switches Based on Potential-Tailored Quantum Microstructures for the Advanced Optical Communication Infrastructure
-
批准号:09450029
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$7.17万
-
财政年份:1997
-
负责人:TADA Kunio
-
依托单位:
Development of ultrahigh performance semiconductor lasers for photonic information infrastructure
-
批准号:08555011
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$6.91万
-
财政年份:1996
-
负责人:TADA Kunio
-
依托单位:
Optical properties of modified potential quantum micro structures and their application to optical modulationlswiching devices
-
批准号:07455034
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$4.42万
-
财政年份:1995
-
负责人:TADA Kunio
-
依托单位:
Joint Research on Gain-Coupled DFB Semiconductor Laser
-
批准号:06044060
-
项目类别:Grant-in-Aid for international Scientific Research
-
资助金额:$4.35万
-
财政年份:1995
-
负责人:TADA Kunio
-
依托单位:
Advanced photonic functional materials based on quantum microstructures with atomic scale precision and their application to optical modulation / switching
-
批准号:03402031
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$12.86万
-
财政年份:1991
-
负责人:TADA Kunio
-
依托单位:
Development of Ultra-High-Speed and Ultra-Stable Single-Mode Semiconductor Lasers Based on Gain-Couplek Distributed Optical feedback
-
批准号:03505001
-
项目类别:Grant-in-Aid for Developmental Scientific Research (A)
-
资助金额:$22.4万
-
财政年份:1991
-
负责人:TADA Kunio
-
依托单位:
Development of Novel Distributed Feedback Semiconductor Lasers with Reflection Insensitivity and Very Low Chirping Property
-
批准号:01850014
-
项目类别:Grant-in-Aid for Developmental Scientific Research (B).
-
资助金额:$8.7万
-
财政年份:1989
-
负责人:TADA Kunio
-
依托单位:
Development of High Performance Distributed Feedback Semiconductor Lasers for Short Wavelength Region
-
批准号:62850065
-
项目类别:Grant-in-Aid for Developmental Scientific Research
-
资助金额:$7.62万
-
财政年份:1987
-
负责人:TADA Kunio
-
依托单位:
Study on the Electrooptic Properties of Semiconductor Heterojunction and Their Application to Optical Modulation
-
批准号:62420019
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$18.88万
-
财政年份:1987
-
负责人:TADA Kunio
-
依托单位:
海外基金