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Research on Optical Modulators and Switches Based on Potential-Tailored Quantum Microstructures for the Advanced Optical Communication Infrastructure

基于潜在定制量子微结构的光调制器和开关研究，用于先进光通信基础设施

基本信息

批准号：
09450029
负责人：
TADA Kunio
金额：
$ 7.17万
依托单位：
Yokohama National University (1998)The University of Tokyo (1997)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

项目摘要

1. Proposal and Design of the Five-Step Asymmetric Coupled Quantum Well (FACQW) :A potential-tailored quantum well structure named as above was proposed and designed. This FACQW, in contrast to the conventional rectangular quantum well (RQW), can produce very large field-induced refractive index change DELTAn in the transparency wavelength region far from the absorption edge. An example of calculated results for the A1GaAs material system is that An under applied field of 10 kV/cm is as large as 0.002 at 830 nm wavelength which is apart from the absorption edge by 40 nm.2. Implementation of Ultra-Fast and Low-Voltage Optical Modulator :As an application of the FACQW, a traveling-wave type Mach-Zehnder interferometer modulator with 2 mm-long arms of optical waveguide composed of 20 sets of the FACQW was fabricated. At 850 nm wavelength, the modulation bandwidth and the switching voltage were measured as 55 GHz and 3 V, respectively. To our knowledge, this is the first traveling-wave type multiple quantum well (MQW) waveguide modulator, and the above modulation bandwidth exceeds the highest value ever reported on semiconductor optical modulators.3. Analysis and Improvement of the FACQW :The above experimental result indicates that DELTAn in the FACQW is a few times as large as DELTAn in the RQW, but is smaller than the calculated value by about one order of magnitude. To clarify the reason for his discrepancy, some simulation analyses have been carried out concerning influences of the layer thickness fluctuation. Some modified structures of the FACQW have also been obtained with higher An or better linearity of DELTAn.4. Other Potential -Tailored Quantum Well Structures :Two new structures have been proposed and studied for electroabsorptive modulators for

1.五步非对称耦合量子阱的提出与设计：提出并设计了一种势阱结构。与传统的矩形量子阱（RQW）相比，该FACQW可以在远离吸收边的透明波长区域中产生非常大的场致折射率变化Δ n。对于Al GaAs材料系统的计算结果的一个例子是，在10 kV/cm的外加电场下，在830 nm波长处的An大到0.002，其与吸收边相距40 nm。超高速低压光调制器的实现：作为FACQW的应用，制作了一个行波型马赫-曾德尔干涉仪调制器，该调制器具有2 mm长的光波导臂，由20组FACQW组成。在850 nm波长处，调制带宽为55 GHz，开关电压为3 V。据我们所知，这是第一个行波型多量子阱（MQW）波导调制器，并且上述调制带宽超过了半导体光调制器的最高值. FACQW的分析和改进：上述实验结果表明，FACQW中的DELTAn是RQW中的DELTAn的几倍，但比计算值小约一个数量级。为了澄清他的差异的原因，已经进行了一些模拟分析的影响，层厚波动。还获得了FACQW的一些修改结构，其具有更高的Δ n或更好的线性Δ n. 4。其他电势定制的量子阱结构：已经提出并研究了两种新的结构用于电吸收调制器，