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Study on the Electrooptic Properties of Semiconductor Heterojunction and Their Application to Optical Modulation

半导体异质结电光特性及其在光调制中的应用研究

基本信息

批准号：
62420019
负责人：
TADA Kunio
金额：
$ 18.88万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1987
资助国家：
日本
起止时间：
1987 至 1989
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-62420019/
关键词：
Molecular Beam Epitaxy GaAs AlGaAs Quantum Well Optical Waveguide Optical Modulator Quantum Confined Stark Effect Band Filling Effect Carrier Induced Effect GaAs@AlGaAs 進行波型デバイス分子線エピタキシー光集積デバイス 2次元エキシトン

项目摘要

(1)Fabrication of double-hetero and quantum well structures by molecular beam epitaxy (MBE) A new MBE system, which utilize the modern control theory for temperature control, has been constructed. Techniques for the fabrication of the double-hetero and quantum well structures with good reproducibility has been established.(2)GaAs-based directional coupler type optical modulators by use of the linear electrooptic effect Design and fabrication of a traveling-wave type device have been performed to obtain the higher switching speed of the GaAs-based directional coupler type optical modulators. The 8mm-long sample, with a switching voltage of 10.4V and a modulation bandwidth of 9.lGHz at a wavelength of 1.06mum, has been successfully fabricated for the first time. A semiconductor-based polarization-independent directional coupler type optical modulator, on a (111) substrate instead of the conventional (100), has also been proposed and designed.(3)Carrier-injection type optical modulator wi … More th bipolar transistor structure Theoretical analyses on the characteristics, such as absorption loss, extinction ratio and chirping parameters, of the bipolar transistor carrier-injection type optical modulator have been performed in detail , and the advantage of the device has been revealed. An MBE-grown single-guide type optical intensity modulator with fairly good performance has been successfully fabricated for the first time. On the basis of the result, it has been found that the bipolar transistor structure is applicable to an X-cross total reflection type optical switch.(4)Electric field induced effect in quantum well waveguides An absorption type optical modulator by use of the quantum confined Stark effect, with an extinction ratio of 13dB at 5.5V bias operating at 880nm, has been fabricated. In addition, modifications in quantum confinement structures, which may provide the optical modulation devices with high performance and various functions, have been investigated both theoretically and experimentally. Some interesting properties in a graded-gap quantum well, a parabolic quantum well and a coupled quantum well have been confirmed. (5)Carrier induced effect in a quantum well A band filling effect by two-dimensional electrons, a band gap shrinkage effect by the many body effect of electrons and their magnetic field induced effects have been studied in detail through carrier injection into a GaAs / AlGaAs single quantum well structure. In addition, changes in the physical constants. such as the refractive index, which are induced by the phenomena described above, have been also investigated, and found to be applicable to the optical modulation devices. Less

(1)用分子束外延(MBE)制备双异质结和量子阱结构一种利用现代控制理论进行温度控制的新型分子束外延系统。利用线性电光效应设计并制作了行波型光调制器，以获得较高开关速度的GaAs基定向耦合型光调制器。首次研制出长8 mm、开关电压10.4V、调制带宽9.1 GHz、波长1.06um的样品。提出并设计了一种基于半导体的偏振无关定向耦合器型光调制器，它位于(111)衬底上，而不是传统的(100)衬底上。(3)载流子注入型…光调制器对双极型晶体管载流子注入型光调制器的吸收损耗、消光比和啁啾参数等特性进行了详细的理论分析，揭示了该器件的优越性。首次研制出性能良好的分子束外延单导型光强度调制器。在此基础上，发现双极晶体管结构适用于X-十字全反射型光开关。(4)量子井光波导中的电场诱导效应利用量子限制斯塔克效应制作了一种吸收型光调制器，在5.5V偏置下，消光比为13db，工作波长为880 nm。此外，还从理论和实验两个方面对量子限制结构的改进进行了研究，以期为光学调制器件提供高性能和多种功能。证实了梯度带隙量子井、抛物线量子井和耦合量子井中的一些有趣的性质。(5)量子阱中的载流子诱导效应研究了二维电子的能带填充效应、电子的多体效应引起的带隙收缩效应以及它们的磁场诱导效应。此外，物理常数的变化。例如由上述现象引起的折射率，也已被研究，并被发现适用于光调制器件。较少