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High Rate Growth of Large Diameter and High Quality Li_2B_4O_7 Piezoelectric Crystals and Practical Research on SAW Devices

High Rate Growth of Large Diameter and High Quality Li_2B_4O_7 Piezoelectric Crystals and Practical Research on SAW Devices
大直径高质量Li_2B_4O_7压电晶体的高速生长及声表面波器件的实用研究
批准号:
03555060
负责人:
SHIOSAKI Tadashi
金额:
$3.2万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1991
资助国家:
日本
项目状态:
已结题
起止时间:
1991 至 1992

项目摘要

项目成果

SHIOSAKI Tadashi的其他基金

相关文献

中文摘要
翻译
采用ADC(Automatic Diameter control)控制的Czochralski方法,以38.5rpm的转速和3mm/h的生长速度,成功生长出透明、无芯、高质量的Li_2B_4O_7单晶。为了改善Li_2B_4O_7生长速度相对较低的问题,提出了调整生长过程中rf输出功率与晶体旋转速率关系的晶体生长新方法。测量了所有介电常数、弹性常数和压电常数及其一、二阶温度系数。通过计算机分析预测了零延迟温度系数(TCD)取向的存在,并通过实验证实了这一点。对于TCD为零的SAW器件,在(0,78,90)附近有一些有用的衬底取向,其中K_S^2约为1%。对于具有小TCD和1.8%左右(0,75,75)的大耦合的漏形SAW器件,也有一个有用的衬底取向。在Li_2B_4O_7晶体上制备了900MHz SAW谐振滤波器。采用相同的Czochralski技术,成功地生长了LiNbO_3和BaTiO_3单晶。研究了这些晶体的光折变效应,并将其应用于光相共轭发生器和光联想存储器。
英文摘要
Transparent, core free and high quality single crystals of Li_2B_4O_7 were successfully grown from a congruent melt at rotation rate of 38.5rpm and growth rate of 3mm/h by the ADC(Automatic Diameter Con-trol) controlled Czochralski method. New Crystal growth methods adjusting the relationship between the rf-output power and the crystal rotation rate during the growth were proposed in order to improve the relatively low growth rate of Li_2B_4O_7. All the dielectric, elastic and piezoelectric constants and their first and second-order temperature coefficients have been measured.The existence of an orientation with zero TCD(Temperature Coefficient of Delay) was predicted by a computer analysis and confirmed experimentally for the Raleigh and leaky SAW and BAW. There are useful substrate orientations for SAW devices with zero TCD around(0゚,78゚,90゚), where K_S^2 is approximately 1%. There is also a useful substrate orientation for the leaky SAW devices with a small TCD and a large coupling of 1.8% around(0゚,75゚,75゚). 900MHz SAW resonator filters were fabricated on Li_2B_4O_7 crystals.Using the same Czochralski technique, LiNbO_3 and BaTiO_3 single crystals were successfully grown. The Photorefractive effect in these crystals were investigated for applications to phase conjugate genarator and optical associative memory.
期刊论文(25)
专著(0)
科研奖励(0)
会议论文
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通讯作者:
Z.Chen: "Generation of Phase Conjugate Wave Using LiNbO_3:Fe and Application to Optical Associative Memory" Japanese Journal of Applied Physics. 31. 3178-3181 (1992)
Z.Chen:“利用LiNbO_3:Fe生成相位共轭波及其在光学联想存储器中的应用”日本应用物理学杂志。
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通讯作者:
M.Ohira: "Crystal Growth of NiNbO_3 : Fe and Its Photorefractive Properties" Jpn.J.Appl.Phys.Vol.30. 2326-2329 (1991)
M.Ohira:“NiNbO_3 的晶体生长:Fe 及其光折变特性”Jpn.J.Appl.Phys.Vol.30。
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通讯作者:
Z.Chen: "Optical Associative Memory Using Photrefractie LiNbO_3:Fe Hologram and LiNbO_3:Fe and BaTiO_3 Phase Conjugate Mirror" Proc.of IEEE 8th Int.Sym.on the Applications of Ferroelectrics.
Z.Chen:“使用光折射 LiNbO_3:Fe 全息图和 LiNbO_3:Fe 和 BaTiO_3 相共轭镜的光学关联存储器”Proc.of IEEE 8th Int.Sym.on the Applications of Ferroelectrics。
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共 24 条
    The influence of thin film fabrication process on ferroelectric properties and ferroelectric random access memories
    • 批准号:
      10450120
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $4.42万
    • 财政年份:
      1998
    • 负责人:
      SHIOSAKI Tadashi
    • 依托单位:
    Fabrication of Ferroelectric Thin Films on Large Size Wafers at High Growth Rate by Metal Organic Chemical Vapor Deposition and Their Application to Memory
    Preparation of Ferroelectric Superlattice Using Phot-excited Process and Their applications to Functional Deviccs
    • 批准号:
      06452217
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $3.33万
    • 财政年份:
      1994
    • 负责人:
      SHIOSAKI Tadashi
    • 依托单位:
    Developmental Research on Large Area Growth of Ferroelectric Thin Films with a High Growth Rate by MOCVD and Their Applications to Memory Device
    • 批准号:
      06555094
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $3.26万
    • 财政年份:
      1994
    • 负责人:
      SHIOSAKI Tadashi
    • 依托单位: