High Rate Growth of Large Diameter and High Quality Li_2B_4O_7 Piezoelectric Crystals and Practical Research on SAW Devices

大直径高质量Li_2B_4O_7压电晶体的高速生长及声表面波器件的实用研究

基本信息

  • 批准号:
    03555060
  • 负责人:
  • 金额:
    $ 3.2万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
  • 财政年份:
    1991
  • 资助国家:
    日本
  • 起止时间:
    1991 至 1992
  • 项目状态:
    已结题

项目摘要

Transparent, core free and high quality single crystals of Li_2B_4O_7 were successfully grown from a congruent melt at rotation rate of 38.5rpm and growth rate of 3mm/h by the ADC(Automatic Diameter Con-trol) controlled Czochralski method. New Crystal growth methods adjusting the relationship between the rf-output power and the crystal rotation rate during the growth were proposed in order to improve the relatively low growth rate of Li_2B_4O_7. All the dielectric, elastic and piezoelectric constants and their first and second-order temperature coefficients have been measured.The existence of an orientation with zero TCD(Temperature Coefficient of Delay) was predicted by a computer analysis and confirmed experimentally for the Raleigh and leaky SAW and BAW. There are useful substrate orientations for SAW devices with zero TCD around(0゚,78゚,90゚), where K_S^2 is approximately 1%. There is also a useful substrate orientation for the leaky SAW devices with a small TCD and a large coupling of 1.8% around(0゚,75゚,75゚). 900MHz SAW resonator filters were fabricated on Li_2B_4O_7 crystals.Using the same Czochralski technique, LiNbO_3 and BaTiO_3 single crystals were successfully grown. The Photorefractive effect in these crystals were investigated for applications to phase conjugate genarator and optical associative memory.
采用ADC(Automatic Diameter control)控制的Czochralski方法,以38.5rpm的转速和3mm/h的生长速度,成功生长出透明、无芯、高质量的Li_2B_4O_7单晶。为了改善Li_2B_4O_7生长速度相对较低的问题,提出了调整生长过程中rf输出功率与晶体旋转速率关系的晶体生长新方法。测量了所有介电常数、弹性常数和压电常数及其一、二阶温度系数。通过计算机分析预测了零延迟温度系数(TCD)取向的存在,并通过实验证实了这一点。对于TCD为零的SAW器件,在(0,78,90)附近有一些有用的衬底取向,其中K_S^2约为1%。对于具有小TCD和1.8%左右(0,75,75)的大耦合的漏形SAW器件,也有一个有用的衬底取向。在Li_2B_4O_7晶体上制备了900MHz SAW谐振滤波器。采用相同的Czochralski技术,成功地生长了LiNbO_3和BaTiO_3单晶。研究了这些晶体的光折变效应,并将其应用于光相共轭发生器和光联想存储器。

项目成果

期刊论文数量(25)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Yukio TANAKA: "Optical Associative Memory using LiNbO_3:Fe Hologram." Japanese Journal of Applied Physics. 30. 2359-2362 (1991)
Yukio TANAKA:“使用 LiNbO_3:Fe 全息图的光学联想记忆。”
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Z.Chen: "Generation of Phase Conjugate Wave Using LiNbO_3:Fe and Application to Optical Associative Memory" Japanese Journal of Applied Physics. 31. 3178-3181 (1992)
Z.Chen:“利用LiNbO_3:Fe生成相位共轭波及其在光学联想存储器中的应用”日本应用物理学杂志。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
M.Ohira: "Crystal Growth of NiNbO_3 : Fe and Its Photorefractive Properties" Jpn.J.Appl.Phys.Vol.30. 2326-2329 (1991)
M.Ohira:“NiNbO_3 的晶体生长:Fe 及其光折变特性”Jpn.J.Appl.Phys.Vol.30。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Z.Chen: "Optical Associative Memory Using Photrefractie LiNbO_3:Fe Hologram and LiNbO_3:Fe and BaTiO_3 Phase Conjugate Mirror" Proc.of IEEE 8th Int.Sym.on the Applications of Ferroelectrics.
Z.Chen:“使用光折射 LiNbO_3:Fe 全息图和 LiNbO_3:Fe 和 BaTiO_3 相共轭镜的光学关联存储器”Proc.of IEEE 8th Int.Sym.on the Applications of Ferroelectrics。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Y.Tanaka: "Optical Associative Memory Using LinbO_3:Fe Hologram" Jpn.J.Appl.Phys.Vol.30. 2359-2362 (1991)
Y.Tanaka:“使用 LinbO_3:Fe 全息图的光学联想记忆”Jpn.J.Appl.Phys.Vol.30。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

SHIOSAKI Tadashi其他文献

SHIOSAKI Tadashi的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('SHIOSAKI Tadashi', 18)}}的其他基金

The influence of thin film fabrication process on ferroelectric properties and ferroelectric random access memories
薄膜制造工艺对铁电特性和铁电随机存取存储器的影响
  • 批准号:
    10450120
  • 财政年份:
    1998
  • 资助金额:
    $ 3.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Fabrication of Ferroelectric Thin Films on Large Size Wafers at High Growth Rate by Metal Organic Chemical Vapor Deposition and Their Application to Memory
金属有机化学气相沉积法在大尺寸晶圆上高生长速率制备铁电薄膜及其在存储器中的应用
  • 批准号:
    09555099
  • 财政年份:
    1997
  • 资助金额:
    $ 3.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Preparation of Ferroelectric Superlattice Using Phot-excited Process and Their applications to Functional Deviccs
光激发铁电超晶格的制备及其在功能器件中的应用
  • 批准号:
    06452217
  • 财政年份:
    1994
  • 资助金额:
    $ 3.2万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Developmental Research on Large Area Growth of Ferroelectric Thin Films with a High Growth Rate by MOCVD and Their Applications to Memory Device
MOCVD大面积高生长率铁电薄膜生长研究及其在存储器件中的应用
  • 批准号:
    06555094
  • 财政年份:
    1994
  • 资助金额:
    $ 3.2万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Preparation of Ferroelectric PZT Thin Films by Photoenhanced CVD and an Application to Memory Devices
光增强CVD铁电PZT薄膜的制备及其在存储器件中的应用
  • 批准号:
    04452176
  • 财政年份:
    1992
  • 资助金额:
    $ 3.2万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Preparation of Functional Ceramic Thin Films by Photo-MOCVD and their Applications to Optical Functional Devices
光MOCVD法制备功能陶瓷薄膜及其在光学功能器件中的应用
  • 批准号:
    01460141
  • 财政年份:
    1989
  • 资助金额:
    $ 3.2万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Growth of Piezoelectric <Li_2> <B_4> <O_7> Single Crystal and its Applications to Ultra High Frequency Surface Acoustic Wave Devices
压电<Li_2><B_4><O_7>单晶的生长及其在超高频声表面波器件中的应用
  • 批准号:
    60460122
  • 财政年份:
    1985
  • 资助金额:
    $ 3.2万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了