Preparation of Functional Ceramic Thin Films by Photo-MOCVD and their Applications to Optical Functional Devices

光MOCVD法制备功能陶瓷薄膜及其在光学功能器件中的应用

• 批准号: 01460141
• 负责人: SHIOSAKI Tadashi
• 金额: $ 4.1万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-01460141/
• 关键词: photo-MOCVD; zinc oxide; lead titanate; lead zirconate titanate; functoinal ceramic thin film; perovskite; ferroelectric hysteresis curve; switching characteristics; 光MO(V+)法; ペロブスカイト相; 比誘電率; 誘電正接; 残留分極; 抗電界; 分極反転電荷密度; 表面光化学反応; 光ド-ピング; 強誘

Functional ceramic thin films, such as zinc oxide (ZnO), lead titanate (PbTiO_3) and lead zirconate titanate (Pb (Zr, Ti) O_3 ; PZT) have been obtained by photo-MOCVD. Using diethyl zinc, O_2, and NO_2, c-Axis oriented ZnO thm films were grown on glass substrates at 150ﾟC. ZnO epitaxialisms were also grown on sapphire substrates at higher than 450ﾟC. The observed effects of UV light irradiation on the growth were an increase in growth rate, an improvement in crystallinity and a change in electrical properties. In photo-MOCVD of ZnO, surface photochemical reactions play a more important role than gas phase photochemical Seactions.(111) oriented PbTiO_3 thin films with a perovskite phase were obtained at 600ﾟC by photoMOCVD using tetraethyl lead, titanium, isopropoxide and O_2. When NO_2 was used as an oxidizing 969, polycrystalline films with a perovskite phase were obtained a (530ﾟC. The crystalline quality and Pb/Ti compositional ratio were influenced by photo irradiation. It was found tfiat photo irradiation helped to reduce the growth temperature. Electrical properties of the films obtained were also investigated. The PbTiO_3 films showed good step coverage characteristics.Pb (Zr, Ti) O_3[PZT]thin films were also prepared by photo-MOCVD. By changing the gas flow rates of Zr 8Rd Ti, preferentially (111) oriented PZT films with a tetragonal phase were grown at 600ﾟC and films with a rhombohedral phase were grown at 650ﾟC. The observed effects of photo irradiation on the growth of PZT were an increase in growth rate and a change in film composition. PZT thin films with a thickness of 3000-6000* showed ferroelectric P-E hysteresis curves and switching characteristics.

采用光MOCVD法制备了氧化锌(ZnO)、钛酸铅(PbTi03)和锆钛酸铅(PZT)等功能陶瓷薄膜。利用二乙基锌、O2和NO2在150ﾟC的温度下在玻璃衬底上生长了c轴取向的氧化锌薄膜，并在450ﾟC以上的蓝宝石衬底上生长了氧化锌外延。紫外光照射对薄膜生长的影响主要表现为生长速率的提高、结晶度的提高和电学性能的改变。在氧化锌的光MOCVD中，表面光化学反应比气相光化学反应起着更重要的作用.在600ﾟC下，用四乙基铅、钛、异丙氧化物和O2进行光MOCVD得到了(111)取向的钙钛矿结构的PbTiO3薄膜.当以NO2为氧化剂时，得到了钙钛矿结构的多晶薄膜a(530ﾟC).研究发现，光照射有助于降低生长温度。对所得薄膜的电学性能也进行了研究。PbTiO3薄膜具有良好的阶跃覆盖特性，采用光MOCVD法制备了PbTiO3[PZT]薄膜。通过改变气体流量，在600ﾟC下生长出了具有四方相的(111)择优取向的PZT薄膜，在650ﾟC下生长出了具有三方相的PZT薄膜。厚度为3000-6000*的PZT薄膜表现出铁电P-E磁滞曲线和开关特性。

项目成果

T.SHIOSAKI: "Piezoelectric Thin Films" J.Ceram.Soc.Jpn.99. 836-841 (1991)

T.SHIOSAKI：“压电薄膜”J.Ceram.Soc.Jpn.99。

M. Shimizu: " "Preparation of PbTiO_3 Thin Films by Photc-MOCVD"" Proc. of the 7th IEEE Int. Sym. on the Applications of Ferroelectrics. Urbana. 669-672 (1990)

M. Shimizu：“通过 Photc-MOCVD 制备 PbTiO_3 薄膜”Proc.

M.SHIMIZU: "Growth of PbTiO_3 Films by Photo-MOCVD" Proc.of the Int.Con.on Thin Film Physics and Applications(Shanghai,Chira,15-17 Apr 1991). 122-127 (1991)

M.SHIMIZU：“Growth of PbTiO_3 Films by Photo-MOCVD”Proc.of the Int.Con.on Thin Film Chemistry and Applications（上海，Chira，1991 年 4 月 15-17 日）。

T.HASE: "Preparation and Switching Kinetics of Pb(Zr,Ti)O_3 thin Films Deposited by Reactive Sputtering" Jpn.J.Appl.Phys.30. 2159-2162 (1991)

T.HASE：“反应溅射沉积的 Pb(Zr,Ti)O_3 薄膜的制备和转换动力学”Jpn.J.Appl.Phys.30。

M. Shimizu: " "Photo-MOCVD of ZnO Epitaxial Films"" J. Crystal Growth. 99. 399-402 (1990)

M. Shimizu：““ZnO 外延薄膜的光 MOCVD””J. 晶体生长。