Preparation of Functional Ceramic Thin Films by Photo-MOCVD and their Applications to Optical Functional Devices

利用光MOCVD技术制备了氧化锌（ZnO）、钛酸铅（PbTiO_3）和锆钛酸铅（Pb（Zr，Ti）O_3 ; PZT）等功能陶瓷薄膜。用二乙基锌、O_2和NO_2在150 ℃下在玻璃衬底上生长了c轴取向的ZnO薄膜。ZnO外延也生长在蓝宝石衬底上，温度高于450 ℃。观察到的影响，紫外光照射的生长是在生长速率的增加，结晶度的改善和电性能的变化。在ZnO的光MOCVD中，表面光化学反应比气相光化学反应起着更重要的作用。(111)采用光金属有机化学气相沉积（photoMOCVD）技术，以四乙基铅、钛、异丙醇和氧气为原料，在600 ℃下制备了具有钙钛矿结构的PbTiO_3薄膜。当用NO_2作氧化剂时，在（530 ℃）得到了钙钛矿相的多晶薄膜。光辐照对合金的结晶质量和Pb/Ti成分比有影响。发现光照射有助于降低生长温度。对薄膜的电学性能进行了研究。利用光MOCVD方法制备了Pb（Zr，Ti）O_3[PZT]薄膜。通过改变Zr 8 Rd Ti的气体流量，在600 ℃下生长出了具有四方相的（111）择优取向的PZT薄膜，在650 ℃下生长出了具有菱方相的PZT薄膜。观察到的影响，光照射的PZT的生长是在生长速率的增加和薄膜成分的变化。厚度为3000-6000 μ m的PZT薄膜具有铁电P-E滞回曲线和开关特性。

Functional ceramic thin films, such as zinc oxide (ZnO), lead titanate (PbTiO_3) and lead zirconate titanate (Pb (Zr, Ti) O_3 ; PZT) have been obtained by photo-MOCVD. Using diethyl zinc, O_2, and NO_2, c-Axis oriented ZnO thm films were grown on glass substrates at 150ﾟC. ZnO epitaxialisms were also grown on sapphire substrates at higher than 450ﾟC. The observed effects of UV light irradiation on the growth were an increase in growth rate, an improvement in crystallinity and a change in electrical properties. In photo-MOCVD of ZnO, surface photochemical reactions play a more important role than gas phase photochemical Seactions.(111) oriented PbTiO_3 thin films with a perovskite phase were obtained at 600ﾟC by photoMOCVD using tetraethyl lead, titanium, isopropoxide and O_2. When NO_2 was used as an oxidizing 969, polycrystalline films with a perovskite phase were obtained a (530ﾟC. The crystalline quality and Pb/Ti compositional ratio were influenced by photo irradiation. It was found tfiat photo irradiation helped to reduce the growth temperature. Electrical properties of the films obtained were also investigated. The PbTiO_3 films showed good step coverage characteristics.Pb (Zr, Ti) O_3[PZT]thin films were also prepared by photo-MOCVD. By changing the gas flow rates of Zr 8Rd Ti, preferentially (111) oriented PZT films with a tetragonal phase were grown at 600ﾟC and films with a rhombohedral phase were grown at 650ﾟC. The observed effects of photo irradiation on the growth of PZT were an increase in growth rate and a change in film composition. PZT thin films with a thickness of 3000-6000* showed ferroelectric P-E hysteresis curves and switching characteristics.