Preparation of Ferroelectric Superlattice Using Phot-excited Process and Their applications to Functional Deviccs
Preparation of Ferroelectric Superlattice Using Phot-excited Process and Their applications to Functional Deviccs
批准号:
06452217
负责人:
SHIOSAKI Tadashi
金额:
$3.33万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1995
中文摘要
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英文摘要
PbTiO_3, Pb (Zr, Ti) O_3 (PZT) and (Pb, La) (Zr, Ti) O_3 (PLZT) thin films were prepared by MOCVD in order to realize the Pb-based ferroelectric superlattice structure. For the evaluation of the crystallinity and epitaxial relationship of the ultrathin films, the energy dispersive typed total reflection X-ray diffraction (TRXD) method was used for the first time. The growth mechanism of pbTiO_3 and PZT thin films at the initial growth stage was also investigated using an atomic force microscope (AFM).Using TRXD,in-plane orientation, epitaxial relationship and lattice spacing of PbTiO_3 and PZT thin films (3 nm - 100 nm in thickness) grown on Pt/MgO were evaluated. From these measurements, it was found that the in-plane orinetations of PbTiO_3 and PZT were strongly dependent on that of Pt on MgO.Lattice spacing of PZT (100) in in-plane at an azimutal angle of 0゚ was 0.399nm. It was also found that PZT on Pt/MgO was compressed in the in-plane and tensed in the vertical direction by the internal stress derived from the inner strains such as lattice mismatch, differnce in the thermal expansion coefficient and the volume change with the ferroelectric phase transition. AFM observations of initial growth stage of PbTiO_3 showed that the islands grew gradually in a lateral dimension until finally they covered the entire substrate surface. From AFM observatins, it was found that the main growth mechanism initial growth stages (-100 nm in thickness) was two-dimensional growth.From our experiments, it was found that the TRXD method and AFM are very useful to evaluate the structural nature of ultrathin ferroelectric films. In particular, the energy dipersive type TRXD method is very promising to evaluate ferroelectric superlattice structure because highly precise in-situ measurement with high reliability can be carried out.
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Masaru Shimizu: "MOCVD of Ferroelectric Pb(Zr,Ti)O_3 and (Pb, La)(Zr, Ti)O_3 Thin Films for Memory Device Applications" Mat. Res. Soc. Symp. Proc.361. 295-305 (1995)
Masaru Shimizu:“用于存储器件应用的铁电 Pb(Zr,Ti)O_3 和 (Pb, La)(Zr, Ti)O_3 薄膜的 MOCVD”Mat。
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通讯作者:
Tadashi Shiosaki: "Characterization of PZT Films Grown by MOCVD on 6-8 Inch Si Waters" Integrated Ferroelectrics. 7. 111-121 (1995)
Tadashi Shiosaki:“通过 MOCVD 在 6-8 英寸硅水中生长的 PZT 薄膜的表征”集成铁电体。
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通讯作者:
塩崎 忠: "強誘電体薄膜メモリ" サイエンスフォーラム, 377 (1995)
盐崎正:“铁电薄膜存储器”科学论坛,377(1995)
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塩嵜 忠: "強誘電体薄膜メモリ" サイエンスフォーラム, 377 (1995)
盐崎正:“铁电薄膜存储器”科学论坛,377(1995)
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作者:
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通讯作者:
T.Shiosaki: "Characterization of PZT Films Grown by MOCVD on 6-8 Inch Si Wafers" Integrated Ferroelectrics. 7. 111-121 (1995)
T.Shiosaki:“通过 MOCVD 在 6-8 英寸硅晶片上生长的 PZT 薄膜的表征”集成铁电体。
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共 28 条
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