权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Developmental Research on Large Area Growth of Ferroelectric Thin Films with a High Growth Rate by MOCVD and Their Applications to Memory Device

MOCVD大面积高生长率铁电薄膜生长研究及其在存储器件中的应用

基本信息

批准号：
06555094
负责人：
SHIOSAKI Tadashi
金额：
$ 3.26万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

A 6-8 inch single wafer type MOCVD system for ferroelectric thin films was developed. Large area growth of Pb (Zr, Ti) 03 (PZT) and (Pb, La) (Zr, Ti) 03 (PLZT) thin films was performed by MOCVD on a 6-8 inch Si wafer. Highly uniform PZT thin films with a variation in film thickness of less than <plus-minus>1.2% were successfu lly grown on a 6-8 inch wafer. The variations in the Pb, Zr and Ti components were of less than <plus-minus>0.8, <plus-minus>0.8 and <plus-minus>1.1%, respectively. PZT films with variation in dielectric constant of less than <plus-minus>5.1% were also obtained on a 6 inch wafer. On a 6 inch wafer. PLZT films with a variation in film thickness of less than <plus-minus>1.5% were also grown. The growth rate of PZT and PLZT films was 30-40/min, which was not enough for the realization of the practical production of memory devices. In order to obtain the high growth rate, an improvement in the shape of gas nozzle shouldThe electrical properties of PZT thin films grown on Ir, IrO_2 and Ir/IrO_2 bottom electrodes and the effects of various top electrode materials on the electrical properties of these PZT films were investigated. The PZT thin film capacitors using Ir and IrO_2 electrodes showed no fatigue up to a switching cycle of 10^<11>. It was also found that annealing process after forming the upper electrode was one of key factors in determining the fatigue characteristics.

研制了一种用于铁电薄膜的6-8英寸单晶片MOCVD系统。采用MOCVD技术在6-8英寸硅片上大面积生长Pb (Zr, Ti) 03 （PZT）和（Pb, La）（Zr, Ti） 03 （PLZT）薄膜。在6-8英寸晶圆上成功生长出高度均匀的PZT薄膜，薄膜厚度变化小于<正负>1.2%。Pb、Zr和Ti组分的变化幅度分别小于<正负>.8、<正负>0.8和<正负>1.1%。在6英寸晶圆上也获得了介电常数变化小于<正负>5.1%的PZT薄膜。在6英寸的晶圆片上。生长的PLZT薄膜厚度变化小于<正负>1.5%。PZT和PLZT薄膜的生长速度为30-40/min，不足以实现存储器器件的实用化生产。研究了在Ir、IrO_2和Ir/IrO_2底电极上生长PZT薄膜的电学性能，以及不同顶电极材料对这些PZT薄膜电学性能的影响。使用Ir和IrO_2电极的PZT薄膜电容器在10^<11>的开关周期内没有出现疲劳。研究还发现，上电极成形后的退火工艺是决定其疲劳性能的关键因素之一。