课题基金 / 基金详情

Growth of Piezoelectric <Li_2> <B_4> <O_7> Single Crystal and its Applications to Ultra High Frequency Surface Acoustic Wave Devices

Growth of Piezoelectric <Li_2> <B_4> <O_7> Single Crystal and its Applications to Ultra High Frequency Surface Acoustic Wave Devices
压电<Li_2><B_4><O_7>单晶的生长及其在超高频声表面波器件中的应用
批准号:
60460122
负责人:
SHIOSAKI Tadashi
金额:
$4.48万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1985
资助国家:
日本
项目状态:
已结题
起止时间:
1985 至 1986

项目摘要

项目成果

SHIOSAKI Tadashi的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
Lithium tetraborate ( <Li_2> <B_4> <O_7> ) has attracted much attention as a promising candidate for the new surface acoustic wave (SAW) and also as bulk acoustic wave (BAW) materials because of its very low temperature coefficient of frequency (TCF) and high coupling. The object of this project is growth of good quality <Li_2> <B_4> <O_7> (LBO) crystal and its applications. The abstract is as follows:1. Transparent, core-free and good quality single crystals of <Li_2> <B_4> <O_7> , up to 23mm in diameter and 80mm in length, have been successfully grown from a congruent melt at rotation rates around 40rpm and growth rate of 1.7mm/h by an automatic diameter control (ADC) of the Czochralski method. It has been pointed out that the growth rate will become higher by making the rotation rate higher and the temperature profile steeper at the solid-melt boundary.2. All the dielectric, elastic and piezoelectric constants and their first- and second-order temperature coefficients have been determined in detail by measuring resonant and antiresonant frequencies.3. The existance of orientations of lithium tetraborate with zero temperature coefficient of delay or frequency have been predicted on the basis of the material constants determined by the present authors, and confirmed experimentally for the Rayleigh and leaky SAW and BAW. There are useful substrate orientations for SAW devices with zero TCD around (0゜,78゜,90゜), (0゜,90゜,78゜) and (45゜,90゜,90゜), where <k_s^2> is approximately 0.8-1%. However, among these substrates, the (45゜,90゜,90゜) is the most suitable substrate, Further, it has been confirmed that the temperature compensated cuts for rotated Y-cut bulk wave devices exist at <theta> of 32゜ for the quasi-longitudinal mode and <theta> of 53゜ for the quasi-shear mode.4. The resonater with Q of 3400 have been successfully fabricated.
期刊论文(12)
专著(0)
科研奖励(0)
会议论文
塩崎忠: to be published in Proceedings of IEEE 1986 International Symposium on the Applications of Ferroelectrics,IEEE New York,(June,9-11,1986;Bethlehem,Pennsylvania). (1987)
Tadashi Shiozaki:发表于 IEEE 1986 国际铁电体应用研讨会论文集,IEEE 纽约,(1986 年 6 月 9 日至 11 日;宾夕法尼亚州伯利恒)(1987 年)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Masatoshi Adachi: "Temperature Compensated Piezoelectric Lithium Tetraborate Crystal for High Frequency Surface Acoustic Wave and Bulk Wave Device Applications" 1985 IEEE Ultrasonic Symposium Proceedings (Oct. 16-18, 1985, San Francisco, California). 85CH
Masatoshi Adachi:“用于高频表面声波和体波器件应用的温度补偿压电四硼酸锂晶体”1985 IEEE 超声波研讨会论文集(1985 年 10 月 16-18 日,加利福尼亚州旧金山)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
安達正利: 1985 IEEE Ultrasonics Symposium Proceedings,85CH2209-5(Oct.16-18,1985,San Francisco,California). 1. 228-232 (1986)
Masatoshi Adachi:1985 年 IEEE 超声波研讨会论文集,85CH2209-5(1985 年 10 月 16-18 日,加利福尼亚州旧金山)1. 228-232 (1986)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Tadashi Shiosaki: "Elastic, Piezoelectric, Acousto-Optic and Electro-Optic Properties of <Li_2> <B_4> <O_7> " Proceedings of the 5th Symposium on Ultrasonic Electronics, Tokyo 1984 Japanese Journal of Applied Physics, Suppl. 24-1. 24. 25-27 (1985)
Tadashi Shiosaki:“<Li_2> <B_4> <O_7> 的弹性、压电、声光和电光特性”,第五届超声波电子学研讨会论文集,东京 1984 年 日本应用物理学杂志,增刊。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
6
    The influence of thin film fabrication process on ferroelectric properties and ferroelectric random access memories
    • 批准号:
      10450120
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $4.42万
    • 财政年份:
      1998
    • 负责人:
      SHIOSAKI Tadashi
    • 依托单位:
    Fabrication of Ferroelectric Thin Films on Large Size Wafers at High Growth Rate by Metal Organic Chemical Vapor Deposition and Their Application to Memory
    Preparation of Ferroelectric Superlattice Using Phot-excited Process and Their applications to Functional Deviccs
    • 批准号:
      06452217
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $3.33万
    • 财政年份:
      1994
    • 负责人:
      SHIOSAKI Tadashi
    • 依托单位:
    Developmental Research on Large Area Growth of Ferroelectric Thin Films with a High Growth Rate by MOCVD and Their Applications to Memory Device
    • 批准号:
      06555094
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $3.26万
    • 财政年份:
      1994
    • 负责人:
      SHIOSAKI Tadashi
    • 依托单位:
    海外基金