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Light-Emitting Mechanism of Rare-Earth Doped III-V Compound Semiconductor and the Light-Emitting Devices of Carrier Injection Type

稀土掺杂III-V族化合物半导体的发光机理及载流子注入型发光器件

基本信息

批准号：
03650022
负责人：
UEKUSA Shin-ichiro
金额：
$ 1.15万
依托单位：
Meiji University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

Photoluminescence (PL) and electroluminescence (EL) spectra of rare earth doped III-V compound semiconductors and Si were investigated in order to clear the light emitting mechanism of the samples prepared by three methods such as liquid-phase epitaxy (LPE), thermal diffusion and ion-implantaion. We observed the luminescence spectra with peculiar peaks which are related to the internal 4f-4f transitions of the rare earth atoms, (which are independent of the optical properties or the band structure of semiconductor). The rare earth doped III-V compound semiconductor systems are promising materials for a new type of optoelectronic devices and EL devices such as laser diode and light-emitting diode. The following results were obtained.1 Liquid-phase epitaxy (LPE)The Yb^<3+>-related luminescence around 1000nm was obtained through the PL or EL measurements from different Yb compounds as YbF_3,YbP in GaAs.For EL samples, the rare earth in GaAs can be excited by carrier injection.The Yb^<3+>-related emission of GaAs : YbF_3 and GaAs : YbP was relatively broad compared with InP : YbCl_3 because the Yb^<3+> forms complex centers with some defects or impurities in GaAs.2 Thermal diffusionThe Er^<3+>-related luminescence around 1540nm was obtained from the Er^<3+>ions in Si, and the photoluminescence excitation spectroscopy (PLE) spectra consisted of sharp peaks which were caused by the direct excitation of Er^<3+>ions.For InP : Er, Er^<3+>-related luminescence was not observed.3 Ion-implantationInP : Yb and Si ; Er showed intense rare-earth related emission compared with LPE and a thermal diffusion.For InP : Yb, when Yb^<3+>ion was excited by the photon energy below the InP-band-gap, Yb^<3+>-related emssion was strong because the new efficient energy transfer processes to Yb^<3+> ions occurred through the defect energy levels.

研究了稀土掺杂Ⅲ-Ⅴ族化合物半导体和Si的光致发光（PL）和电致发光（EL）光谱，以阐明采用液相外延、热扩散和离子注入三种方法制备的样品的发光机理。我们观察到了与稀土原子内部4f-4f跃迁有关的特殊发光峰（与半导体的光学性质或能带结构无关）。稀土掺杂Ⅲ-Ⅴ族化合物半导体系统是一种很有前途的新型光电子器件和电致发光器件材料，如激光二极管和发光二极管。1.液相外延（LPE）通过对不同Yb化合物如YbF_3、YbP在GaAs中的PL或EL测量，获得了1000 nm附近的Yb^<3+>相关发光。对于EL样品，GaAs中的稀土可以通过载流子注入激发。GaAs：YbF_3和GaAs：YbP的Yb^<3+>相关发光与InP：由于Yb^<3+>与GaAs中的某些缺陷或杂质形成络合中心，所以YbCl_3。2热扩散从Si中的Er^<3 +>离子获得了1540 nm附近的Er^<3+>相关发光，并且光致发光激发光谱（PLE）谱由由Er^<3+>离子直接激发引起的尖锐峰组成。Er、Er^<3+>相关发光未被抑制。3离子迁移InP：Yb和Si ; Er显示出与LPE和热扩散相比强烈的稀土相关发光。Yb，当Yb^<3+>离子被低于InP带隙的光子能量激发时，与Yb^<3+>相关的发射很强，因为通过缺陷能级向Yb^<3+>离子发生了新的有效能量转移过程。