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STUDY ON DEVELOPMENT OF ATOMIC LAYER CONTROLLED CVD APPARATUS FOR FABRICATION PROCESS OF EXTREMELY LARGE SCALE INTEGRATED CIRCUITS

超大规模集成电路制造工艺用原子层控制CVD装置的研制研究

基本信息

批准号：
04555064
负责人：
MUROTA Junnichi
金额：
$ 10.69万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1994
项目状态：
已结题

项目摘要

Purpose of this study is to develop and to estabish novel CVD apparatus as an atomic layr epitaxy technology widely applied to Si extremely large scale integrated circuits. In this CVD,simple hydride gases, i.e.SiH_4 and GeH_4, are used as a reactant gas. In higher partial pressure range of the reactant gases (around a few Pa or a few hundreds Pa), adsorbed layr of the gases are formed, and then flash heating by the flash light shot results in the reaction of adsorbed molecules and single atomic layr epitaxy of Si and Ge. So far, we have developed flash heating CVD apparatus and have been realized the separation between adsorption and reaction of reactant gases. In this year, as the last year of the term, we have realized atomic layr growth of Si and Ge and an atomic layr superlattice structure of Si_1Ge_1. Finally, we have fabricated a double barrier resonant tunneling diode, and current peaks due to resonant tunneling effect were clearly observed in the current-voltage characteristic … More .Concretely itemizing,(1) concerning to control the crystal structure of the initial surface for atomic layr epitaxy, a dimer structure on Si (100) was clearly observed after exposing the surface to the air,(2) single atomic layr epitaxy of Ge on Si surface was realized by using flash heating CVD at 275ﾟC,(3) single atomic layr epitaxy of Si on Ge surface was realized by self-limiting thermal reaction of SiH_4 at 200-300ﾟC,(4) we have fabricated resonant tunneling diode with single Ge quantum well sandwiched by double Si_1 Ge_1 superlattice barriers, which were formed by alternately depositing the single atomic layrs of Si and Ge as stated in (2) and (3). All the process during/after growth of the double barrier structure were done below 300ﾟC.Negative resistance characteristic, in which clear current peaks appeared at the bias voltages of -0.6 V and 0.7 V approximately assigned to the predicted value, was observed.The success of this project supplies a key to atomic layr controlled process applied to device fabrication and we summarized this project. Less

本研究的目的是开发和建立一种新型的CVD装置，作为一种广泛应用于硅超大规模集成电路的原子层外延技术。在该CVD中，使用简单的氢化物气体，即SiH_4和GeH_4作为反应气体。在较高的反应气体分压范围内（大约几Pa或几百Pa），形成气体的吸附层，然后通过闪光照射的闪光加热导致吸附分子的反应和Si和Ge的单原子层外延。到目前为止，我们已经开发了闪速加热CVD装置，并实现了反应气体的吸附和反应分离。今年是本学期的最后一年，我们实现了Si和Ge的原子层生长和Si_1Ge_1的原子层超晶格结构。最后，我们制作了一个双势垒共振隧穿二极管，在电流-电压特性曲线中观察到了明显的共振隧穿电流峰 ...更多信息具体而言，（1）关于控制原子层外延初始表面的晶体结构，在将表面暴露于空气后，在Si（100）上清楚地观察到二聚体结构，（2）通过使用275 ℃的闪速加热CVD实现Ge在Si表面上的单原子层外延，（3）利用SiH_4在200-300 ℃的自限热反应实现了Si在Ge表面的单原子层外延，（4）制备了Si_1Ge_1超晶格双势垒单Ge量子阱共振隧穿二极管，其通过如（2）和（3）中所述交替沉积Si和Ge的单原子层而形成。双势垒结构生长过程中和生长后的所有工艺均在300 ℃以下进行，观察到负阻特性，在偏置电压为-0.6 V和0.7 V时出现明显的电流峰值，与预测值接近，该项目的成功为原子层控制工艺应用于器件制造提供了关键，并对该项目进行了总结。少