Development of Stress Measurement of Silicon Single Crystal by Infrared Polarized Laser

红外偏振激光硅单晶应力测量的研究进展

• 批准号: 05555035
• 负责人: NIITSU Yasushi
• 金额: $ 3.58万
• 依托单位: TOKYO DENKI UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555035/
• 关键词: Stress Measurement; Silicon Single Crystal; Photoelasticity; Infrared Laser; 応力分布計測; 残留応力; 光弾性変調器; 高周波変調法

In this project, thetheory and method of the measurement of optical birefringence in silicon single crystal were investigated. We have developed the potical apparatus which possess high sensitivity to measure small birefringence typically produced by stress using the method of laser photoelasticity. The equipment adopts the He-Ne infrared laser as a light source to measure the stress in silicon single crystal. The magnitude of principal stress difference as well as the directions were obtained simultaneously and quantitatively by our developed measuring system.The optical birefringences were measured for Si-wafer specimens by applying tensile loads to several crystal orientations. Consequently, it was discovered that the photoelastic constant depended on the crystalline orientation and the birefringence direction dosen't coincide with the principal stress direction. By the stress strain analysis of silicon single crystal, it was found that the birefringence direction coincides with the principal strain direction and the relation between the principal strain difference and the retardation was independent of crystal orientation. These results show that Brewster's Law (linear relation between optical retardation and principal stress difference)should be modified.

本课题研究了硅单晶光学双折射的测量理论和方法。我们研制了一种高灵敏度的光学装置，用激光光弹性法测量应力引起的微小双折射。该装置采用He-Ne红外激光器作为光源，测量硅单晶中的应力。利用所研制的测量系统，可以同时定量地获得主应力差的大小和方向，并通过在不同晶向上施加拉伸载荷，测量了硅片样品的光学双折射率。结果表明，光弹性常数与晶体取向有关，双折射方向与主应力方向不一致。通过对硅单晶的应力应变分析，发现硅单晶的双折射方向与主应变方向一致，主应变差与相位差的关系与晶向无关。这些结果表明，布鲁斯特定律（光学延迟与主应力差之间的线性关系）应加以修正。

项目成果

Yasushi NIITSU: "Accuracy Evaluation of Stress Measurement in Silicon Crystal by Microscopic Raman Spectroscopy" Proc.of Int.Electronics Packaging Conference. 1. 255-259 (1993)

Yasushi NIITSU：“通过显微拉曼光谱对硅晶体中的应力测量进行准确度评估”国际电子封装会议论文集。

Yasusi NIITSU: "Stress Measurement in Si-Wafer using Polarized Infrared Laser Photoelasticity" Mech.and Materials for Electronic Packaging. AMD-Vol.187. 37-40 (1994)

Yasusi NIITSU：“使用偏振红外激光光弹性进行硅晶圆应力​​测量”电子封装机械与材料。

Yasusi NIITSU: "Infuence of Crystal Orientation on Photoelastic Property of Silicon Single Crystal" Proc.of ASME Int.Conf.on Electronic Packaging. (発表予定). (1995)

Yasusi NIITSU：“晶体取向对硅单晶光弹性特性的影响”Proc.of ASME Int.Conf.on Electronic Packaging（即将发表）。

Y.NIITSU,K.ICHINOSE and K.IKEGAMI: "Stress Measurement of Transparent Materials by Polarized Laser" Trans.of JSME,Series-A. Vol.59, No.559. 600-605 (1993)

Y.NIITSU、K.ICHINOSE 和 K.IKEGAMI：“偏振激光透明材料的应力测量”Trans.of JSME，Series-A。

Y.NIITSU and K.GOMI: "Stress Measurement in Si-Wafer using Polarized Infrared Laser" Proc.of JSME Annual Meeting. No.940-10 Vol.2. 723-725 (1994)

Y.NIITSU 和 K.GOMI：“使用偏振红外激光进行硅晶圆应力​​测量”JSME 年会论文集。