"Stress Evaluation of Silicon Single Crystal by Laser Raman Spectroscopy"

使用拉曼光谱仪进行的测量已经实际上用于材料的评估，例如，粘合结构和电子性能。最近，根据拉曼光谱测量的分辨率功率的提高，这一方法被应用于测量材料中的微观压力。在拉曼光谱的转变和压力状态之间的关系没有出现。本研究是激光拉曼光谱的压力评估方法。已收到的结果;1.光学声子频率是由硅晶体中原子的动态等式形成的。拉曼光谱和压力状态之间的关系在理论上和实验上都是可见的。对于{100} surface， and it is impossible to determine the shear stress in the {100} surface. 3。The shift of Raman spectrum of {110} surfase depends on the stress magnitude as well as stress direction.两个光学声子频率可以通过{110}表面的不同极性配置产生不同的事件和散射光。

The measurements using Raman spectroscopy have been used practically for the evaluation of materials, for example, the bonding structures and the electrical properties. Recently, accoding to the advance of the resolution power of Raman spectrum measurement, this method is applied to measure the microscopical stress in the materials. However, the relations between the shift of Raman spectrum and stress state are not obtained. This study is for the stress evaluation method by laser Raman spectrum. Following results are obtained ;1. The optical phonon frequencies are formulated from the dynamic equation of atoms in the silicon crystal. The relations between the shift of Raman spectrum and stress states are both theoretically and experimentally obtained.2. The shift of Raman spectrum depends only on the addition of normal stresses (σィイD2xxィエD2+σィイD2yyィエD2 ) for the back-scattering optical configuration for {100} surface, and it is impossible to determine the shear stress in the {100} surfase.3. The shift of Raman spectrum of {110} surfase depends on the stress magnitude as well as stress direction.4. Two optical phonon frequencies can be obtained by different polarity configurations of incident and scattered light for {110} surfase.