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THERMAL STRESS ESTIMATION FOR LARGE DIAMETER SILICON SINGLE CRYSTAL USING MATERIAL PROPERTIES OBTAINED FROM MOLECULAR DYNAMICS METHOD

THERMAL STRESS ESTIMATION FOR LARGE DIAMETER SILICON SINGLE CRYSTAL USING MATERIAL PROPERTIES OBTAINED FROM MOLECULAR DYNAMICS METHOD
利用分子动力学方法获得的材料特性估算大直径硅单晶的热应力
批准号:
08455064
负责人:
MIYAZAKI Noriyuki
金额:
$3.84万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997

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中文摘要
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英文摘要
The following are results of the present research.(1) A molecular dynamics code was developed to calculate thermal expansion coefficient and elastic constants of single crystals. These values for alpha-Fe were successfully obtained up to intermediate temperatures using the molecular dynamics code. At elevated temperatures, stable solutions cannot be obtained, because thermal oscillation becomes large with temperature increase. To obtain thermal expansion coefficient and elastic constants at the elevated temperatures such as the melting point remains unsolved as a future problem.(2) A computer code was developed for simulations of dislocation density in semiconductor bulk crystals during growth process. The Haasen-Sumino model was used as a constitutive equation for single crystals at elevated temperatures. Dislocation density simulations were perfomed using this computer code for Si, GaAs and InP to show the effectiveness of the computer code. The results indicate W-type dislocation density distributions across the diameter in GaAs and InP single crvstals that can be observed in practical Czochralski (CZ) growth of GaAs and InP.This computer code can be used as a powerful tool for research and development of high quality bulk single crystal.(3) The Young's modulus of Si single crystal near the melting point was estimated in accordance with the fact that dislocation-free bulk single crystals with 8-inch diameter are produced commonly by meana of the practical CZ growth. When the Young's modulus obtained from the experimental relation between the critical resolved shear stress and the corresponding strain for Si single crystal was used in the dislocation density simulation of a 8-inch diameter Si single crystal, dislocation-free single crystal was obtained as a result.Therefore, the use of this Young's modulus is recommended for dislocation density simulations for large diameter CZ silicon crystals such as 16-inch diameter crystals.
期刊论文(14)
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会议论文
宮崎則幸: "半導体バルク単結晶CZ育成過程における転位密度評価" 日本機械学会論文集・A編. 63・607. (1997)
Noriyuki Miyazaki:“半导体块状单晶 CZ 生长过程中位错密度的评估”,日本机械工程学会会刊,卷 A. 63, 607。(1997 年)
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14
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    • 批准号:
      24656086
    • 项目类别:
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    • 财政年份:
      1999
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