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DISLOCATION FREE TECHNOLOGY FOR HIGHLY LATTICE MISMATCHED HETEROEPITAXY

用于高度晶格失配异质外延的无位错技术

基本信息

批准号：
02555057
负责人：
NISHINAGA Tatau
金额：
$ 10.24万
依托单位：
UNIVERSITY OF TOKYO
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1992
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02555057/
关键词：
GaAs on Si MBE LPE Epitaxial lateral Overgrowth Photo luminescence etch pit buffer layer low-dislocation Crystal GaAs Si ファセット放射状ラインシ-ドヒ-トサイクル法

项目摘要

Growth technology of GaAs on Si substrate may open new area in opto-electronics. The present project aims at developing the technology to grow high quality GaAs on Si substrate. The technology developed in this project consists of two parts. In the first part, the technology for getting uniform GaAs by MBE on Si substrate was developed. To improve the crystal quality, various kinds of buffer layers were employed, for instance, GaAs buffer layer crystallized from amorphous GaAs thin layer, crystalline GaAs buffer layer epitaxially deposited at relatively low temperature, AlAs/GaAs double amorphous buffer layer and so on. The GaAs epitaxial layer is grown on these buffer layers with and without thermal cycle annealing. The evaluation of the GaAs layer was made by photoluminescence, by KOH etching and AFM. Among these buffer layers, A Among these buffer layers, AlAs/GaAs double amorphous buffer gave the best result. When the thermal cycle annealing was made during the GaAs EPITAXIAL GROWT … More H, films with low dislocation density of 3x10^6/cm^2, narrow X-ray FWHM of 145 sec and bright photoluminescence intensity were obtained.In the second part, epitaxial lateral over growth by LPE is employed to reduce the dislocation density. GaAs epitaxial layer grown by MBE on Si is used as a substrate and the surface is coated by SiO_2 film. Then narrow window of 5mum width is cut in the SiO_2 film and this part is used as a seed for the LPE growth. The growth is started from this window and when the height of the top surface exceeds the oxide layer the lateral growth starts. Since the oxide layer prevent the dislocation to continue the above layer, the part of laterally grown layer becomes dislocation free. This has been confirmed and drastic decrease of dislocation density in the laterally grown region was observed. However, relatively large number of stacking faults was observed. In conclusion, lateral epitaxial growth is very hopeful technique to get dislocation free GaAs on Si substrate. Less

Si衬底上的GaAs生长技术可能会开辟光电子学的新领域。本项目旨在发展在硅衬底上生长高质量砷化镓的技术。该项目开发的技术包括两个部分。第一部分研究了在Si衬底上用分子束外延获得均匀GaAs的技术。为了提高晶体质量，采用了各种缓冲层，如非晶GaAs薄层晶化的GaAs缓冲层、低温外延生长的晶态GaAs缓冲层、AlAs/GaAs双非晶缓冲层等，并在这些缓冲层上生长了GaAs外延层。通过光致发光、KOH蚀刻和AFM对GaAs层进行评估。在这些缓冲层中，AlAs/GaAs双非晶缓冲层的效果最好。在GaAs外延生长过程中进行热循环退火时， ...更多信息 H，薄膜的位错密度为3 × 10 ~ 6/cm ~ 2，X射线半高宽为145秒，发光强度高。用分子束外延法在Si上生长GaAs外延层作为衬底，表面镀SiO_2膜。然后在SiO_2膜上切出5 μ m宽的窄窗口，作为LPE生长的种子。从该窗口开始生长，并且当顶表面的高度超过氧化物层时，开始横向生长。由于氧化层阻止了位错继续上一层，所以横向生长层的部分变成无位错。这一点已得到证实，并观察到位错密度在横向生长区急剧下降。然而，观察到相对大量的堆垛层错。总之，横向外延生长是在Si衬底上获得无位错GaAs的一种很有希望的方法。少