STRUCTURAL DYNAMICS OF EPITAXY AND QUANTUM MECHANICAL APPROACH

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The present research has been conducted from April of 1995 to March of 1997. During this period, 6 meetings were held including one meeting to summarize the results of the present research which was held in Kobe on 25th and 26th of January, 1997. One of the aims of the present project is to provide a common place for the discussions among the theoretical and experimental scientists for obtaining deep understandings in the structure dynamics of epitaxy by quantum mechanical approach and by sophisticated experiments. It has been shown by lst principle quantum mechanical calculation that electron counting model can explain very well the atomistic structure of reconstructed surface with growing adatoms. Basing on this, Monte Carlo simulation was conducted with the help of electron counting model and it was found that the difference in the behavior of A and B steps on (001) GaAs is well explained. Monte Calro simulation for the growth of two-component crystal was also conducted.In the experimental part, the behavior of ad-atom on Si reconstructed surface was studied by using scanning tunneling microscope (STM) and it was found reconstruction influences the morphology of 2D islands. The surface diffusion length of group III atoms until incorporation was studied by using microprobe-RHEED/SEM MBE.It was found that the diffusion length of incorporation depends strongly on As pressure and that the direction of inter-surface diffusion between (111) B and (001) surfaces is reversed twice as As pressure is increased due to the As pressure dependency of group III atom life time. Although, there is still a large gap between theoretical and experimental works, this kind of effort to bury the gap is very important.