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Studies of High Quality InP Layrs Heteroepitaxially Grown on Si Substrates by Epitaxial Lateral Overgrowth and Fabrication of Long-wavelengh Laser Diodes

硅基片上横向外延生长高质量InP层的研究及长波长激光二极管的制造

基本信息

批准号：
07555107
负责人：
NISHINAGA Tatau
金额：
$ 8.96万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1997
项目状态：
已结题

项目摘要

Growth of III-V materials on Si substrates is a key technology for fabricating opto-electronic integrated circuits (OEICs). Though a lot of studies about the growth of III-V materials on Si have been carried out, a large lattice mismatch and a big difference in the thermal expansion coefficient between III-V materials and Si substrates still bring high dislocation density (-10^6 cm^<-2>) and strong residual stress in the layrs. The dislocations in the III-V materials strongly deteriorate the device characteristics and their lives, therefore, further crystallinity improvement is necessary to obtain devices with high performance and excellent reliability.Epitaxial lateral overgrowth (ELO) which is a new technique to grow thin layrs laterally through an opening in SiO_2 film, which is called as "a line seed", is a very promising technique to overcome these difficulties. In ELO,propagation of dislocations is stopped by the SiO_2 mask and dislocation-free areas are obtained on the laterally overgrown regions.In order to grow dislocation-free InP layrs on Si substrates, ELO technique was used and a long-wavelength laserdiode structure was fabricated on it.Spatially resolved photoluminescence measurements showed that the optical quality of the ELO layrs was almost the same as that of a homoepitaxially grown InP layr. The ELO technique is not only useful to obtain dislocation-free regions but also useful to release residual stress. The growth mechanism of ELO was also studied in terms of the surface supersaturation. The optimized growth condition brought wide dislocation-free InP layrs on Si substrates with high reproducibility. The long-wavelength laserdiode structure fabricated on the ELO layr showed excellent optical quality, which suggests the realization of the laser with high performances. 3-dimensional finite element method calculation showed that the island structures of ELO layrs were useful to reduce the residual stress.

硅基Ⅲ-Ⅴ族材料的生长是制备光电集成电路的关键技术。尽管人们对在Si衬底上生长III-V族材料进行了大量的研究，但由于III-V族材料与Si衬底之间的晶格失配和热膨胀系数差异较大，仍然会导致位错密度较高（~ 10^6cm ^<-2>），层中存在较强的残余应力。III-V族材料中的位错严重影响了器件的性能和寿命，因此，要获得高性能和高可靠性的器件，就必须进一步提高晶体的结晶度，而外延横向过生长（ELO）技术是一种通过SiO_2薄膜中的开口横向生长薄层的新技术，被称为“线籽晶”。ELO技术是利用SiO_2掩模阻止位错的传播，在横向过生长区获得无位错区.为了在Si衬底上生长无位错的InP层，采用ELO技术，并在其上制备了长波长激光二极管结构.空间分辨光致发光测量表明，ELO层的光学质量与同质外延生长的InP层的光学质量几乎相同. ELO技术不仅有利于获得无位错区，而且有利于释放残余应力。从表面过饱和度的角度研究了ELO的生长机理。优化的生长条件在Si衬底上获得了宽范围的无位错磷化铟层，且重复性高。在ELO层上制作的长波长激光二极管结构显示出良好的光学质量，这表明可以实现高性能的激光器。3-三维有限元计算表明，ELO层的岛状结构有利于降低残余应力。