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Studies of High Quality GaAs Layers Heteroepitaxially Grown on Si Substrates by Microchannel Epitaxy and Fabrication of Laser Diodes

硅衬底上微通道外延异质外延生长高质量砷化镓层及激光二极管的制备研究

基本信息

批准号：
10555119
负责人：
NISHINAGA Tatau
金额：
$ 6.98万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

Growth of III-V materials on Si substrates is a key technology for fabricating opto-electronic integrated circuits (OEICs). Though a lot of studies about the growth of III-V materials on Si have been carried out, a large lattice mismatch and a big difference in the thermal expansion coefficient between Ill-V materials and Si substrates still bring high dislocation density (〜10ィイD16ィエD1 cmィイD1-2ィエD1) and strong residual stress in the layers. The dislocations in the Ill-V materials strongly deteriorate the device characteristics and their lives especially in optical devices, therefore, further crystallinity improvement is necessary to obtain optical devices with high performance and commercial reliability.Microchannel epitaxy (MCE) is a new technology to grow thin layers laterally through an opening in SiOィイD22ィエD2 film, which is called as "microchannel". In MCE, epitaxial relationship is transferred through a microchannel to the grown layer but the defects such as dislocations are not continued except a narrow microchannel. Therefore, MCE has a very-high potentiality for overcoming the above-mentioned difficulties in heteroepitaxy.MCE was applied to the growth of dislocation-free GaAs layers on Si substrates. By optimizing the growth conditions for maximizing the ratio of the width of a MCE layer to the thickness (W/T ratio), very wide dislocation-free regions, which were as large as 100 μm, were consequently obtained, Spatially resolved photoluminescence measurements showed that the optical quality of the MCE layers was almost the same as that of a homoepitaxially grown ones. The vertical cavity surface-emitting laser was tried to fabricate on the MCE layer. As the result, an excellent optical quality of the laser, which shows a simulated emission on the light output by current injection, was achieved. An optimization of the fabrication process of the lasers will bring to the realization of an elemental OEIC.

硅基Ⅲ-Ⅴ族材料的生长是制备光电集成电路的关键技术。尽管已经进行了大量关于在Si上生长III-V族材料的研究，但是III-V族材料与Si衬底之间的大的晶格失配和大的热膨胀系数差异仍然在层中带来高的位错密度（0.10 × 10 - 4D 16 × 10 - 4D 1 cm-1）和强的残余应力。III-V族材料中的位错严重影响了器件的性能和寿命，特别是在光学器件中，因此，为了获得高性能和商业可靠性的光学器件，必须进一步提高晶体的结晶度。微通道外延（MCE）是一种通过SiO_xO_22_xO_22薄膜中的开口横向生长薄层的新技术，被称为“微通道”。在MCE中，外延关系通过微通道转移到生长层，但是除了狭窄的微通道之外，诸如位错的缺陷不连续。因此，MCE技术在克服上述困难方面具有很大的潜力，并将其应用于Si衬底上无位错GaAs层的生长。通过优化生长条件，使MCE层的宽厚比（W/T比）达到最大，获得了宽达100 μm的无位错区。空间分辨光致发光测试表明，MCE层的光学质量与同质外延生长的MCE层基本相同。尝试在MCE层上制作垂直腔面发射激光器。结果，实现了激光器的优良光学质量，其显示了通过电流注入的光输出的模拟发射。优化激光器的制造工艺将实现基本的OEIC。