Double Diffusive Natural Convection in Crystal Growth
晶体生长中的双扩散自然对流
基本信息
- 批准号:06044171
- 负责人:
- 金额:$ 3.84万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for international Scientific Research
- 财政年份:1994
- 资助国家:日本
- 起止时间:1994 至 1995
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In the process of crystal growing of pure materials, very small amount of impurities are accumulated just outside of the solidification front. This induces the concentration gradient an concentration natural convection. The cooling temperature gradient and concentration gradient induce so to speak double diffusive natural convection.This is the theme of the present research. At the beginning, two phase layrs were adopted as a most simple system of double diffusion. The lower half layr is a dense salt water layr and the upper half layr a pure water layr. Both layrs are heated from the one vertical side and cooled from opposing vertical side. After two layrs are strted to be heated and cooled, salt component is continuously diffused to the upper layr and the salt-thick plume is raised upward along the heated wall. Because of the high Lewis number of the system, the thick concentration boundary layr is kept for long and the core regime is relatively pure water for many hours. This induces oscillatory convection both in the upper and lower layrs. The temperature dependence of the properties were found to move the two-layr interface constantly upward. The mass transfer rate was correlated by a single equation. It is determined not by the concentration differece but by the diffusion coefficient. Various systems for the buoyant forces due to temperature and concentration either opposite or the same directions were studied for the oscillatory convection characterstics.
在纯材料的晶体生长过程中,只有极少量的杂质在凝固前沿外积累。这导致了浓度梯度和浓度自然对流.冷却温度梯度和浓度梯度诱导了所谓的双扩散自然对流,这是本研究的主题。一开始,采用两相层作为最简单的双扩散系统。下半部为致密咸水层,上半部为纯水层。两层都是从一个垂直侧加热,从相对的垂直侧冷却。经过两层加热和冷却后,盐组分不断扩散到上层,盐厚的羽流沿着受热壁向上上升。由于系统的高Lewis数,厚的浓度边界层长时间保持,核心区域是相对纯净的水长达数小时。这在上层和下层都引起了振荡对流。研究发现,这些性质的温度依赖性使双层界面不断向上移动。传质速率可用单一方程关联。它不是由浓度差决定的,而是由扩散系数决定的。为了研究振荡对流特性,研究了温度和浓度相反或相同方向的浮力的不同系统。
项目成果
期刊论文数量(25)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
W.N KIM,J.M.HYUN,Hiroyuki OZOE: "Effect of aspect ratio on mass transfer from a rotating cup" Int.J.Heat Mass Transfer. (in press).
W.N KIM、J.M.HYUN、Hiroyuki OZOE:“长宽比对旋转杯传质的影响”Int.J.Heat Mass Transfer。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Katsuyoshi KAMAKURA and Hiroyuki OZOE: "Transient change of the interface between roll cells in double diffusive natural convection" JAME International Journal. 38B. (1995)
Katsuyoshi KAMAKURA 和 Hiroyuki OZOE:“双扩散自然对流中滚动细胞之间界面的瞬态变化”JAME 国际期刊。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Katsuyoshi KAMAKURA and Hiroyuki OZOE: "Numerical computation of double diffusive natural convection of low Prandtl number fluid in a rectangular box" The 14th International Riga Conference on Magnetohydrodynamics. 1. 97-97 (1995)
Katsuyoshi KAMAKURA 和 Hiroyuki OZOE:“矩形盒子中低普朗特数流体的双扩散自然对流的数值计算”第 14 届里加国际磁流体动力学会议。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Katsuyoshi KAMAKURA,Hiroyuki OZOE: "Effect of temperature dependence of fluid properties on the migration of an interface in double diffusive natural convection" International Journal of Heat and Mass Transfer. 38. 3413-3421 (1995)
Katsuyoshi KAMAKURA、Hiroyuki OZOE:“流体特性的温度依赖性对双扩散自然对流中界面迁移的影响”国际传热传质杂志。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Katsuyoshi KAMAKURA and Hiroyuki OZOE: "Oscillatory double diffusive natural convection in a two-layer system" Proc.of 10th International Heat Transfer Conference,16-NC-14. 7. 67-72 (1994)
Katsuyoshi KAMAKURA 和 Hiroyuki OZOE:“双层系统中的振荡双扩散自然对流”第十届国际传热会议论文集,16-NC-14。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
OZOE Hiroyuki其他文献
OZOE Hiroyuki的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('OZOE Hiroyuki', 18)}}的其他基金
Magnetic convection
磁对流
- 批准号:
12450313 - 财政年份:2000
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
The effect of magnetic field on the continuous steel casting process
磁场对连铸钢过程的影响
- 批准号:
10555259 - 财政年份:1998
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Magnetic convection
磁对流
- 批准号:
10211207 - 财政年份:1998
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas (B)
DISCUSSION OF THE EFFECT OF ROTATING MAGNETIC FIELD ON CRYSTAL GROWTH
旋转磁场对晶体生长影响的讨论
- 批准号:
09650834 - 财政年份:1997
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Enhanced convection by application a magnetic field
通过施加磁场增强对流
- 批准号:
07650902 - 财政年份:1995
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
The Study for the Improvement of Crystallization Process
结晶工艺改进的研究
- 批准号:
01850050 - 财政年份:1989
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B).
Control of Deposition Process of Metal Vapor by Themal Energy
热能控制金属蒸气沉积过程
- 批准号:
01460119 - 财政年份:1989
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
The study of heat transfer and flow characteristics of liquid metals under a magnetic field
磁场下液态金属的传热和流动特性研究
- 批准号:
63044105 - 财政年份:1988
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Overseas Scientific Survey.
The study on the natural convection heat transfer of liquid metals under the magnetic and gravitational fields
磁场和重力场下液态金属自然对流换热研究
- 批准号:
62550155 - 财政年份:1987
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
The development of a new computational scheme for mixed convection with using a scalar potential
使用标量势开发混合对流新计算方案
- 批准号:
60550668 - 财政年份:1985
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
相似海外基金
SBIR Phase I: Universal Crystal Growth Capsule and Novel Wafer Dicing Tool for In-Space Manufacturing
SBIR 第一阶段:用于太空制造的通用晶体生长舱和新型晶圆切割工具
- 批准号:
2419346 - 财政年份:2024
- 资助金额:
$ 3.84万 - 项目类别:
Standard Grant
CAREER: Transport Phenomena and the Uptake of Foreign Species during Crystal Growth
职业:晶体生长过程中的传输现象和外来物质的吸收
- 批准号:
2339644 - 财政年份:2024
- 资助金额:
$ 3.84万 - 项目类别:
Continuing Grant
Atomic-scale surface and interface structural analysis of crystal growth process in molten metal
熔融金属中晶体生长过程的原子尺度表面和界面结构分析
- 批准号:
23H01850 - 财政年份:2023
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Enantiopure inorganic crystal growth using spin-polarized electrons
利用自旋极化电子生长对映体纯无机晶体
- 批准号:
23H01870 - 财政年份:2023
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
2023 Crystal Growth and Assembly Gordon Research Conference and Gordon Research Seminar
2023晶体生长与组装戈登研究会议暨戈登研究研讨会
- 批准号:
2326807 - 财政年份:2023
- 资助金额:
$ 3.84万 - 项目类别:
Standard Grant
Elucidation of Mechanism of Vapor Phase Crystal Growth for Photoreactive Molecules and Development of Method of Controlling Photomechanical Properties by Substrate
阐明光反应分子的气相晶体生长机制以及开发通过基材控制光机械性能的方法
- 批准号:
23KJ1830 - 财政年份:2023
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for JSPS Fellows
A Single Entity Method for Controlled Nucleation and Crystal Growth
控制成核和晶体生长的单一实体方法
- 批准号:
10720470 - 财政年份:2023
- 资助金额:
$ 3.84万 - 项目类别:
Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
第 23 届美国晶体生长和外延会议 (ACCGE-23) 的参与者支持;
- 批准号:
2333144 - 财政年份:2023
- 资助金额:
$ 3.84万 - 项目类别:
Standard Grant
Crystal Growth Control in Aqueous Ceramic Syntheses Using Micropatterns of Ultrathin Water Layers
使用超薄水层微图案控制水性陶瓷合成中的晶体生长
- 批准号:
23K17960 - 财政年份:2023
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Challenging Research (Exploratory)
Development of a Simple and Scalable Method for Organic Semiconductor Single Crystal Growth and Formation of Multi-Single Crystal Thin Films for Applications in Field-Effect Transistor-Based Devices.
开发一种简单且可扩展的方法,用于有机半导体单晶生长和多单晶薄膜的形成,用于基于场效应晶体管的器件。
- 批准号:
22K14293 - 财政年份:2022
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Early-Career Scientists