Fabrication of Multi-Layred Thin Film Structure by Photo-induced Catalytic Reactions of Organometallic Compounds

有机金属化合物光诱导催化反应制备多层薄膜结构

• 批准号: 06452210
• 负责人: NIWANO Michio
• 金额: $ 4.8万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06452210/
• 关键词: Photo-induced catalytic reaction; Organometallic compound; Ultra-thin film; Ultraviolet light; Synchrotron radiation; Layred structure; Photodecomposition

We have investigated a method of fabricating multi-layred ultra-thin film structure by photoinduced catalytic reactions of organomatallic compounds on solid surfaces. We utilized ultraviolet (UV) and vacuumultraviolet (VUV) lights as the exciting light source.We have investigated the photo-induced reactions of organic compounds such as tetramethylsilane (TMS) and its hydrogen-sustitued compounds which take place on Si surfaces. These compounds are precurcers for wide-gap semiconductor silicon carbide, SiC.We confirmed that amorphous SiC is formed on the Si surface by the photodecomposition and subsequent photopolymerization of TMS.We also demonstrated with IR measurements that the C-H bonds of TMS are decomposed by VUV irradiation through two reaction pathways : one is the primary photodecomposition and the other is the secondary process in which photofragments react with TMS.The metal/GaAs interface reaction which occurs during the deposition of metals on GaAs have been investigated using synchrotron-radiation photoemission spectroscopy, x-ray diffraction, and Rutherford backscattering spectroscopy. We found that diffusion and aggregation of metal atoms at the metal/GaAs interface proceeds in different manners depending on the metal deposited and the surface chemical state of the GaAs substrate. We also revealed that CaF_2 epitaxially grows on the sulfur-treated GaAs surface, while the traditional acid treatment of the surfaceleads to formation of amorphous CaF_2

研究了一种利用有机金属化合物在固体表面的光诱导催化反应制备多层超薄膜结构的方法。我们利用紫外（UV）和真空紫外（VUV）光作为激发光源，研究了有机化合物如四甲基硅烷（TMS）及其氢取代化合物在Si表面的光诱导反应。这些化合物是宽禁带半导体碳化硅（SiC）的掺杂剂。我们证实了TMS的光分解和随后的光聚合在Si表面形成了非晶SiC。我们还用IR测量证明了TMS的C-H键在VUV照射下通过两种反应途径分解：一个是初级光解过程，另一个是光碎片与TMS反应的次级过程。用同步辐射光电子能谱、X射线衍射和卢瑟福背散射谱研究了金属在GaAs上沉积过程中的界面反应。我们发现，在金属/GaAs界面的金属原子的扩散和聚集进行不同的方式取决于沉积的金属和GaAs衬底的表面化学状态。我们还发现，硫处理的GaAs表面上有CaF_2的外延生长，而传统的酸处理则导致非晶CaF_2的形成

项目成果

D.Shoji, M.Niwano, and N.Miyamoto: "Low-temperature epitaxial growth of CaF2 on (NH4) 2Sx-treated GaAs (100) surface" Appl.Surf.Sci.(in press).

D.Shoji、M.Niwano 和 N.Miyamoto：“CaF2 在 (NH4) 2Sx 处理的 GaAs (100) 表面上的低温外延生长”Appl.Surf.Sci.（出版中）。

K.Kinashi et al.: "Synchrotron Radiation Induced Reactions of a Condensed Layer of Sillicon Alkoxide on Si" Journal of Vacuum Science and Technology. A13. 1879-1884 (1995)

K.Kinashi 等人：“硅上硅醇盐凝结层的同步辐射诱导反应”真空科学与技术杂志。

K.Kinashi et al.: "UV-Assisted Deposition of TEOS SiO2 Film Using Spin-Coating Method" Appl.Surf.Sci.79/80. 332-337 (1994)

K.Kinashi 等人：“使用旋涂法 UV 辅助沉积 TEOS SiO2 薄膜”Appl.Surf.Sci.79/80。

M.Niwano et al.: "UV-Induced Deposition of SiO2 Film from TEOS Spin-Coated on Si" J.Electrochem.Soc.141. 1556-1561 (1994)

M.Niwano 等人：“硅上旋涂 TEOS 的 SiO2 薄膜的紫外线诱导沉积”J.Electrochem.Soc.141。

M. Niwano et al.: "UV-Induced Deposition of SiO2 Film from TEOS Spin-Coated on Si" J. Electrochem. Soc.141・6. 1556-1561 (1994)

M. Niwano 等人：“硅上旋涂 TEOS 的 SiO2 薄膜的 UV 诱导沉积”J. Electrochem.141・6（1994 年）。