Developmental Research of an Apparatus for In-line Monitoring of Contamination on Si Wafer Surface

硅片表面污染在线监测装置的研制

• 批准号: 10555113
• 负责人: NIWANO Michio
• 金额: $ 7.74万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-10555113/
• 关键词: Semiconductor; Infrared spectroscopy; Multiple internal reflection; surface contamination; organic materials; In-line monitoring; Large-diameter Si wafer; シリコン; インライン・モニタリング

In the fabrication of MOS devices, preparing chemically clean silicon surfaces is quite important. However, organic materials already present in the air may contaminate Si wafer surfaces prior to fabrication processes. Those materials cannot be completely removed by thermal annealing, and eventually affect the electrical performance of MOS devices. To fabricate high-quality, high-reliable MOS devices, therefore, we need an in-situ, rapid determination of the level of organic contamination on Si wafer surfaces during the fabrication process of the devices. In this study, an IR monitoring system has been developed for the rapid detection and characterization of organic contamination on Si wafer surfaces. IR light propagates through the Si wafer, internally reflecting many times, which makes it possible to detect small amounts of surface contamination on the wafer surface.We have performed an experiment demonstrating the feasibility of infrared absorption monitoring of organic contaminants on a 300-mm-diameter Si wafer in the multiple internal reflection (MIR) geometry with modest means. The main purpose of the experiment is to show the detection limit of the present system for organic contamination and then to compare it with the reported upper limit of the contamination level that has no appreciable effect on the electrical performance of MOS devices, that is, 10^<12> carbon atoms/cm^2 . We found that the present system allows for the detection of hydrocarbon contamination on Si wafer surfaces with a contamination level of below 10^<11> carbon atoms /cm^2. The present results demonstrate that the proposed monitoring system is quite beneficial to the fabrication of high-quality electronic devices.

在MOS器件的制造中，制备化学清洁的硅表面是非常重要的。然而，在制造工艺之前，已经存在于空气中的有机材料可能污染Si晶片表面。这些材料不能通过热退火完全去除，并最终影响MOS器件的电性能。因此，为了制造高质量、高可靠性的MOS器件，我们需要在器件的制造过程中原位、快速地测定Si晶片表面上的有机污染水平。在这项研究中，红外监测系统已被开发用于快速检测和表征硅晶片表面上的有机污染。IR光通过Si晶片传播，内反射多次，这使得它可以检测到少量的表面污染物在wafer surfaces.We已经进行了一个实验，证明了在300毫米直径的Si晶片上的有机污染物的红外吸收监测的可行性，在多次内反射（MIR）的几何结构与适度的手段。该实验的主要目的是显示本系统对有机污染的检测极限，然后将其与报告的污染水平上限（即10^碳原子/cm ^2）进行比较，该污染水平对MOS器件的电性能没有明显影响<12>。我们发现，本系统允许检测硅晶片表面上的碳氢化合物污染，其污染水平低于10^<11>碳原子/cm ^2。目前的结果表明，建议的监测系统是相当有益的高品质的电子器件的制造。

项目成果

Michiaki Endo et al.: "Infrared monitoring of hydrocarbons on 300-mm Si wafers"Precision Science and Technology for Perfect Surfaces. 480-484 (1999)

Michiaki Endo 等人：“300 毫米硅片上碳氢化合物的红外监测”完美表面的精密科学与技术。

Michio Niwano et al.: "In-line monitoring of organic contaminants on 300-mm Si wafer surfaces"M&E,(Kogyo-Tyosakai). Vol.27, No.1 (in Japanese). 180-186 (2000)

Michio Niwano 等人：“在线监测 300 毫米硅晶圆表面的有机污染物”M

庭野道夫 他: "300mmシリコンウェハ表面の有機汚染インライン・モニタリング"M&E (Electronics Equipment Engineering). 1. 180-186 (2000)

Michio Niwano 等人：“300mm 硅片表面有机污染的在线监测”M&E（电子设备工程）1. 180-186 (2000)。

M.Terashi,J.Kuge,M.Shinohara,D.Shoji,and M.Niwano: "Hydrogen adsorption and desorption processes on Si(100)" Applied Surface Science. 130-132. 260-265 (1998)

M.Terashi、J.Kuge、M.Shinohara、D.Shoji 和 M.Niwano：“Si(100) 上的氢吸附和解吸过程”应用表面科学。

Michiaki Endo et al.: "Infrared monitoring system for the detection of organic contamination on a 300mm Si wafer"Applied Physics Letters. 75・4. 519-521 (1999)

Michiaki Endo 等人：“用于检测 300mm Si 晶圆上有机污染的红外监测系统”应用物理快报 75・4（1999 年）。