Development of Atomic-Scale, Infrared Reflection Spectroscopic Techniques for Characterization of Semiconductor Surfaces

用于表征半导体表面的原子级红外反射光谱技术的发展

• 批准号: 05555109
• 负责人: NIWANO Michio
• 金额: $ 8.06万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555109/
• 关键词: infrared reflection Spectroscopy; Semiconductor surface; Atomic scale monitoring; Multiple internal reflection; In-situ monitoring; Solid-liquid interface; Semiconductor fabrication process; 赤外分光; 原子制御; 評価装置; 大気酸化; 表面処理

We have investigated and developed a method of characterizing in the atomic scale the chemical states of silicon wafer surfaces using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry (MIR). Because of its high surface sensitivity, IRAS-MIR is a powerful tool for investigating the chemical nature of semiconductor surfaces. The main aim of this study is to develop a monitoring system for measuring in-situ the surface chemical state of silicon wafers whilestored in vacuum, air and solution, and furthermore to determine the performance of the system.As a result, we have for the first time succeeded to monitor the surface chemical states of silicon wafers during storage in hydrofluoric acid (HF) solution with the developed monitoring system. We have demonstrated that the surface while immersed in HF solution is not completely terminated with hydrogen and water rinsing leads to the perfect hydrogen termination. Using the developed monitoring system which enables us to measure the chemical state of Si surfaces in atmospheric environment, we have also investigated the initial stages of oxidation of Si surfaces during storage in air. We demonstrated that the oxidation of the topmost layr of the hydrogen-terminated surface is strongly affected by the moisture of air, and that the oxidation of the surface Si-H bonds leads to the formation of native oxide film.

我们研究并发展了一种利用多重内反射几何(MIR)中的红外吸收光谱(IRAS)在原子尺度上表征硅片表面化学状态的方法。由于其高表面灵敏度，IRAS-MIR是研究半导体表面化学性质的有力工具。本研究的主要目的是开发一种在线监测硅片在真空、空气和溶液中储存时的表面化学状态的监测系统，并进一步确定该系统的性能，从而首次成功地利用所开发的监测系统监测硅片在氢氟酸(HF)溶液中储存期间的表面化学状态。我们已经证明，当浸泡在HF溶液中时，表面不会完全被氢气终止，而水漂洗会导致完美的氢气终止。利用所开发的监测系统，我们能够测量大气环境中硅表面的化学状态，我们还研究了硅表面在空气中储存过程中的初始氧化阶段。我们证明了氢端表面最上层的氧化受空气湿度的强烈影响，表面硅氢键的氧化导致了自然氧化膜的形成。

项目成果

M. Niwano, J. Kagayama, K. Kurita, K. Kinashi, I. Takahashi, and N. Miyamoto: "Infrared Spectroscopy Study of Initial Stages of Oxidation of Hydrogen-Terminated Si Surfaces Stored in Air" Journal of Applied Physics. 76. 2157-2163 (1994)

M. Niwano、J. Kagayama、K. Kurita、K. Kinashi、I. Takahashi 和 N. Miyamoto：“储存在空气中的氢封端硅表面氧化初始阶段的红外光谱研究”应用物理学杂志。

M. Niwano et al.: "Real-Time In-Situ Infrared Study of Etching of Si(100)and(111)Surfaces in Dilute Hydrofluoric Acid Solution" Journal of Applied Physics. (印刷中). (1996)

M. Niwano 等人：“稀氢氟酸溶液中 Si(100) 和 (111) 表面蚀刻的实时原位红外研究”应用物理学杂志（1996 年出版）。

M.Niwano, J.Kageyama, K.Kinashi, J.Sawahata, N.Miyamoto: "Oxidation of Hydrogen-Terminated Si Surfaces Studied by Infrared Spectroscopy" Surf. Sci. Lett. Vol.301. L245-L249 (1994)

M.Niwano、J.Kageyama、K.Kinashi、J.Sawahata、N.Miyamoto：“通过红外光谱研究氢封端硅表面的氧化”冲浪。

M.Niwano et al.: "Hydrogen Termination of the NH4F-Treated Si(111) Surface Studied by Photoemission and Surface Infrared Speetroscopy" Material Research Soc.Symp.Proc.315. 505-511 (1993)

M.Niwano 等人：“通过光电发射和表面红外光谱研究的 NH4F 处理的 Si(111) 表面的氢终止”材料研究 Soc.Symp.Proc.315。

T. Miura, M. Niwano, D. Shoji, and N. Miyamoto: "Initial Stages of Oxidation on Hydrogen-Terminated Si Surface Stored in Air" Applied Surface Science. (印刷中).

T. Miura、M. Niwano、D. Shoji 和 N. Miyamoto：“存储在空气中的氢封端硅表面的氧化初始阶段”应用表面科学（正在出版）。