Control of Spontaneous Emission from Selectively Grown Semiconductor Photonic Dots
Control of Spontaneous Emission from Selectively Grown Semiconductor Photonic Dots
批准号:
12450118
负责人:
SUEMUNE Ikuo
金额:
$9.28万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2001
中文摘要
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英文摘要
Vertical cavity surface emitting lasers (VCSELs) are expected to play an important role for optical parallel information processing, and the integration of VCSELs has been studied. Since the integration needs very high uniformity of the lasing threshold, it is very difficult to realize large-scale integration. In this respect, it will be ideal if we could realize thresholdless lasers in near future. In this project, three-dimensional photonic confinement structure based on a pyramid was fabricated and exciton-photon interactions were studied to control the spontaneous emission processes, which will lead to realize such a thresholdless laser operations.Three-dimensional optical microcavities were prepared with ZnS pyramids selectively grown on GaAs substrates. The resonance Q values as large as 〜5000 was observed in the wavelength region of 〜400 nm. Since GaAs is lossy material in this wavelength range, it is a surprise to have such a high resonance Q value. This was attributed to the l … More arge enough difference of the refractive indices with the contribution from the X and L indirect band transitions, which have the very large density of states in this wavelength range. By extending this finding to more arbitrary wavelength, three-dimensional optical microcavities made of ZnS pyramids were grown on ZnSe -based distributed Bragg reflectors (DBRs), where DBR is expected to function as an efficient reflector from the base plane of the pyramids. Such ZnS pyramids grown on the DBRs were embedded with CdS quantum dots to study the exciton-photon interactions. The pyramids showed the resonance Q values over 1000 and spontaneous emission from the CdS quantum dots was well enhanced by the coupling to the resonance modes. The enhanced PL peak as well as the half width exhibited highly temperature-stabilized properties. This demonstrated that the enhanced peak is well controlled by the cavity properties, not by the semiconductor light emitter. This demonstrated the nice features of the very low temperature dependence of the spontaneous emission, which is one of the important issue for optical communications with wavelength multiplexing. Less
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A.Ueda: "Study of Resonance Wavelengths in II-VI Semiconductor Photonic Dots-Pyramidal Size Dependences and Their Luminescence Properties-"phys. stat. sol. (b). 229・No.2. 971-976 (2002)
A.Ueda:“II-VI 半导体光子点的共振波长及其发光特性的研究 -”phys (b) 229·No.2。
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A.Veta: "Enhancement of Spontaneous Emission by ZnS-based II-VI Semiconductor Photonic Dots"J.Cryst.Growth. 214/215. 1024-1028 (2000)
A.Veta:“ZnS 基 II-VI 半导体光子点增强自发发射”J.Cryst.Growth。
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A.Veta: "Growth Mechanism of Selectively Grown II-VI Semiconductor Photonic Dots for Short Wavelength Light Emittiers"J.Cryst.Growth. 221. 425-430 (2000)
A.Veta:“用于短波长发光器的选择性生长 II-VI 半导体光子点的生长机制”J.Cryst.Growth。
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A.Ueta: "Study of Resonance Wavelengths in II-VI Semiconductor Photonic Dots-Pyramidal Size Dependences and Their Luminescence Properties"phys. stat. sol. (b). 229,No.2. 971-976 (2002)
A.Ueta:“II-VI 半导体光子点中共振波长的研究 - 金字塔尺寸依赖性及其发光特性”phys。
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ABM Almamun Ashrafi: "Single-Crystalline Rocksalt CdO Layers Grown on GaAs(001) Substrates by Metalorganic Molecular-Beam Epitaxy"Appl. Phys. Lett.. Vol.79・No.4. 470-472 (2001)
ABM Almamun Ashrafi:“通过金属有机分子束外延在 GaAs(001) 基板上生长的单晶岩盐 CdO 层”Appl Phys. Vol.79・No.4 (2001)。
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共 14 条
Study on Electron-photon Quantum-state Conversion in Quantum Dots Embedded in Meta Microcavities
-
批准号:21246048
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$28.12万
-
财政年份:2009
-
负责人:SUEMUNE Ikuo
-
依托单位:
Single-Photon Generation and Detection and Its Conversion to Electron Spin States for Quantum Information Applications
-
批准号:17068001
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$44.48万
-
财政年份:2005
-
负责人:SUEMUNE Ikuo
-
依托单位:
Study on coherent control of exciton states in quantum dots embeddedin pyramidal microcavities
-
批准号:16106005
-
项目类别:Grant-in-Aid for Scientific Research (S)
-
资助金额:$70.47万
-
财政年份:2004
-
负责人:SUEMUNE Ikuo
-
依托单位:
Study of Large Purcell Effect in Three-dimensional microcavities
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批准号:14350154
-
项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.22万
-
财政年份:2002
-
负责人:SUEMUNE Ikuo
-
依托单位:
Development of AFM-SEM Coupled Lithography for Fabricating Nano Optical Devices
-
批准号:10555097
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$8.06万
-
财政年份:1998
-
负责人:SUEMUNE Ikuo
-
依托单位:
Fabrication of quantum dots with visible light emission and study of its stimulated emission
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批准号:09450119
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.02万
-
财政年份:1997
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负责人:SUEMUNE Ikuo
-
依托单位:
Excitonic optical transition in a new II-VI semiconductor superlattice
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批准号:07455126
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.74万
-
财政年份:1995
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负责人:SUEMUNE Ikuo
-
依托单位:
Research on Blue Semiconductor Lasers Based on MOCVD
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批准号:07555094
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$7.1万
-
财政年份:1995
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负责人:SUEMUNE Ikuo
-
依托单位:
Study of High-Performance Blue Semiconductor Lasers Based on Localized Excitons
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批准号:04402032
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$17.6万
-
财政年份:1992
-
负责人:SUEMUNE Ikuo
-
依托单位:
海外基金