权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Development of Heteroepitaxial Diamond Thin Films as Novel Semiconducting Materials

异质外延金刚石薄膜作为新型半导体材料的开发

基本信息

批准号：
07555240
负责人：
MOROOKA Shigeharu
金额：
$ 11.65万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

项目摘要

We produced diamond thin films on (100) and (111) silicon or diamond crystals by microwave plasma-assisted chemical vapor deposition method and developed applications of the films as semiconducting materials.The quality of heteroepitaxial diamond films was strongly affected by orientation of diamond nuclei formed in the very early stage of the deposition. We examined the mechanism of the nucleation in detail, and developed a novel "double-step bias treatment process." We also showed that propylene was superior to methane as the carbon source. By optimizing deposition conditions, we successfully improved the fraction of oriented diamond particles in the nucleation stage up to 60% from the original fraction of 40%.Semiconducting properties of diamond films are dependent on dopants and doping conditions. Although diborane and phosphine are typically used as the boron and phosphorus dopants, respectively, they are very difficult to handle because of toxicity and flammability. We discovered … More that trimethylboron (TMB) and triethylphosphine (TEP) possessed low toxicity and flammability as well as appropriate vapor pressures. We determined the growth rates on the (100) and (111) diamond faces as functions of substrate temperature and methane and TMB or TEP concentrations. B-and P-doped diamond films which were thus formed on (100) and (111) diamond single crystal substrates were characterized by high-resolution scanning electron microscopy, Raman spectroscopy, secondary ion mass spectroscopy and reflection high energy electron diffraction. Semiconductive properties of the films were evaluated by Hall effect examination.Diamond films, which were formed on (100) and (111) diamond crystals using TMB as the boron source were smooth and homoepitaxial. Boron was incorporated in the diamond films homogeneously, and the width of the diamond peak detected by Raman spectroscopy was equivalent to that of natural diamond. The mobility of the TMB-doped film was 300 cm^<2.>V^<-1.>s^<-1> at a hole concentration of 3*10^<13> cm^<-3>, and the activation energy for conductivity in the range of 200-293 K was approximately 0.2eV.Both were lower than those reported with diamond films doped with diborane. The TEP-doped diamond film showed a high resistivity. These results will be improved by further optimizing deposition conditions. Less

我们用微波等离子体辅助化学气相沉积法在（100）和（111）硅或金刚石晶体上制备了金刚石薄膜，并开发了该薄膜作为半导体材料的应用。我们详细地研究了成核机理，并提出了一种新的“双步偏压处理工艺”。“我们还表明，丙烯作为碳源上级甲烷。通过优化沉积条件，我们成功地将金刚石薄膜中处于成核阶段的定向金刚石颗粒比例从原来的40%提高到60%。金刚石薄膜的半导体性能取决于掺杂剂和掺杂条件。虽然乙硼烷和膦通常分别用作硼和磷掺杂剂，但由于毒性和易燃性，它们非常难以处理。我们发现 ...更多信息三甲基硼（TMB）和三乙基膦（TEP）具有低毒性和易燃性以及合适的蒸气压。我们确定了（100）和（111）金刚石表面的生长速率与衬底温度、甲烷和TMB或TEP浓度的函数关系。用高分辨扫描电子显微镜、拉曼光谱、二次离子质谱和反射高能电子衍射对在（100）和（111）金刚石单晶衬底上制备的B和P掺杂金刚石薄膜进行了表征。用霍尔效应测试了薄膜的半导体性能，以TMB为硼源，在（100）和（111）金刚石晶体上生长的金刚石薄膜均为均匀、平整的薄膜。硼在金刚石薄膜中的掺入均匀，拉曼光谱检测到的金刚石峰的宽度与天然金刚石相当。在<2.><-1.><-1>空穴浓度为3 × 10 ~（-3）<13>cm ~（-3）时，掺TMB薄膜的迁移率为300 cm ~（-3）V ~（-3）s <-3>~（-3），在200-293 K范围内的电导激活能约为0.2eV，均低于掺乙硼烷的金刚石薄膜的电导激活能。掺杂TEP的金刚石膜显示出高的电阻率。这些结果将通过进一步优化沉积条件来改善。少