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Epitaxial Growth of Diamond on Chemically Modified Surface of Foreign Substrates

金刚石在异质基体化学改性表面上的外延生长

基本信息

批准号：
05453104
负责人：
MOROOKA Shigeharu
金额：
$ 3.78万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

项目摘要

The formation of large-area single-crystal films is a goal of CVD diamond research because of their great potential in microelectronic device technology. In the present study, microwave plasma chemical vapor deposition (MPCVD) was adopted and highlyorientated diamond film was formed by treating the substrate surface by various methods.First, the effect of scratching with fine powders such as diamond, c-BN,alumina and metal borides on diamond deposition was systematically examined. The population density of diamond particles formed on the scratched Si (100) face was greatly increased, but a polycrystalline film was formed in all cases. Heteroepitaxial nucleation and growth of an orientated diamond film were confirmed on the (100) and (111) planes of c-BN single crystal. However, the formation of c-BN single-crystal film was not realized yet.On the other hand, a highly orientated diamond film was grown on the (100) Si substrate by a bias-enhanced MPCVD.The Si surface carburized under optimum conditions showed a "Mesh Structure" on the nanometer scale. The formation of this structure was essential for the nucleation of (100) orientated diamond particles. The growth of randomly orientated diamond particles was then suppressed by changing the reaction condition to that favorable for the (111) growth. At the final stage, CO_2 was mixed in the reactant system and a highly (100) orientated flat diamond film was obtained.

大面积单晶薄膜的形成是CVD金刚石研究的一个目标，因为它在微电子器件技术中具有巨大的潜力。本研究采用微波等离子体化学气相沉积（MPCVD）技术，通过多种方法对基体表面进行处理，形成了高取向的金刚石膜。首先，系统地考察了金刚石、碳氮化硼、氧化铝和金属硼化物等细粉对金刚石沉积的影响。在刮伤的Si（100）表面上形成的金刚石颗粒的密度大大增加，但在所有情况下都形成了多晶膜。在c-BN单晶的（100）和（111）平面上证实了取向金刚石薄膜的异质外延成核和生长。然而，c-BN单晶膜的形成尚未实现。另一方面，通过偏置增强MPCVD在（100）Si衬底上生长出高度取向的金刚石膜。在最佳渗碳条件下，硅表面呈现出纳米尺度的“网状结构”。这种结构的形成是（100）取向金刚石颗粒成核的必要条件。然后通过改变有利于（111）生长的反应条件来抑制随机取向金刚石颗粒的生长。最后，在反应物体系中加入CO_2，得到了高度（100）取向的平面金刚石膜。