课题基金 / 基金详情

Study of Superconductor Thin Film Growth and the manifestation Mechanism Using Super-Excited Atomic Oxygen (O^<****>) Beam

Study of Superconductor Thin Film Growth and the manifestation Mechanism Using Super-Excited Atomic Oxygen (O^<****>) Beam
超激发原子氧(O^<****>)束超导薄膜生长及其表现机制研究
批准号:
07559003
负责人:
INO Shozo
金额:
$4.16万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996

项目摘要

项目成果

INO Shozo的其他基金

相似基金

相关文献

中文摘要
翻译
1996年,我们对去年研制的亚稳束源进行了改进,在差动真空室中建立了机械斩波器,对亚稳束流进行脉冲处理。我们还在斩波器下游50 cm处安装了光电倍增管(Ceratron),以斩波器的门信号为触发,对信号进行积分,获得亚稳态光束的飞行时间(TOF)谱。获得的飞行时间谱表明,He光束的速度平均值为3000 m/S,而O^lt;**&gt;光束的分布在速度平均值为2000和500m/S处有两个峰值,此外,我们还观察到了O^lt;**&gt;TOF光谱的精细结构。这表明,O^&lt;**&gt;束由几个能量不同的O^&lt;**&gt;‘S组成,用TOF方法有可能将一个不同能量的O^&lt;**&gt;原子分开。这一结果还需要用激光等技术进行进一步的研究。我们尝试通过一个差分室和一个超高压室将亚稳态束源连接起来,以生产超导薄膜。我们注意到,在流动的O^&lt;**&gt;梁上维持特高压是困难的。因此,我们将涡轮分子泵与超高压室连接起来。此外,我们还证明了从氮气或二氧化碳气体中可以产生与上述技术不同的激发能的N^&lt;**&gt;或O^&lt;**&gt;,并且亚稳态光束的最佳条件正在研究中。
英文摘要
In 1996 we modified the metastable beam source made in last year, built mechanical chopper in differential vacuum chamber to pulse the metastable beam. We also built photomultiplier (ceratron) at 50 cm downstream of the chopper, to obtain time-of-flight (TOF) spectrum of the metastable beam by integrating the signal, with the gate signal of the chopper as trigger. The obtained TOF spectra showed that the velocity avarage of He^<**> beam is 3000 m/s, whereas the distribution of O^<**> beam has two peak at the velocity avarage of 2000 and 500 m/s. In addition, we observed fine structures of the O^<**> TOF spectrum. This indicates that the O^<**> beam consists of several O^<**>'s each of which has different energy, and there is a possibility to devide an O^<**> atoms with different energy by TOF method. This result needs further investigation with laser technique etc.We have tried to connect the metastable beam source via a differential chamber with an UHV chamber for the production of superconductive thin film. We noticed that it is difficult to maintain UHV on flowing the O^<**> beam. Hence, we connect a turbo molecular pump with the UHV chamber.Furthermore, we have demonstrated that N^<**> or O^<**> with different excitation energy from that by the above technique can be produced from nitrogen or carbon dioxide gas, and the best condition of the metastable beams are on investigation.
期刊论文(23)
专著(0)
科研奖励(0)
会议论文
T. Takami et al.: "Recognition of Individual Tail Groups in Self-Assembled Monolayers" Langmuir. 11. 3876-3881 (1995)
T. Takami 等人:“自组装单层细胞中单个尾群的识别”Langmuir。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
T.Yamanaka et al.: "Observation of the Growth Modes of In on Ga-Covered Si (111) Surfaces Using Ultra-High Vacuum Scanning Electron Microscopy" Surface Science. 356. 39-46 (1996)
T.Yamanaka 等人:“使用超高真空扫描电子显微镜观察 Ga 覆盖的 Si (111) 表面上 In 的生长模式”表面科学。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
T.Yamanaka et al.: "Atomic Depth Distributuion Analysis of In and Ga on Si (111) during Epitaxial Growth and a New Type of Surfactant-Mediated Epitaxy" Japnese Journal of Applied Physics. 35. 3991-3998 (1996)
T.Yamanaka 等人:“外延生长过程中 Si (111) 上 In 和 Ga 的原子深度分布分析和新型表面活性剂介导的外延”日本应用物理学杂志。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
C.S.Jiang et al.: "Surface Conductivity for Au or Ag on Si (111)" Physical Review B. 54. 10389-10392 (1996)
C.S.Jiang 等人:“Si (111) 上 Au 或 Ag 的表面电导率”Physical Review B. 54. 10389-10392 (1996)
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
共 16 条
    The structure control of metal fine particle with micelle structure and the development of ferromagnet
    • 批准号:
      11490003
    • 项目类别:
      Grant-in-Aid for Scientific Research (B).
    • 资助金额:
      $9.09万
    • 财政年份:
      1999
    • 负责人:
      INO Shozo
    • 依托单位:
    Structure and physical propertied of nano micelle with the nucleus of multiply twinned particles
    Study of Atom Dynamics and Surface Conductance during Epitaxial Growth
    • 批准号:
      06455007
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $5.06万
    • 财政年份:
      1994
    • 负责人:
      INO Shozo
    • 依托单位:
    Appararus of Reflection High Energy Electron Diffraction-Physical Proparty Measurments for Grown Surface Atomic Layr at Low temperature
    • 批准号:
      05559005
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $4.48万
    • 财政年份:
      1993
    • 负责人:
      INO Shozo
    • 依托单位:
    海外基金