Study of Superconductor Thin Film Growth and the manifestation Mechanism Using Super-Excited Atomic Oxygen (O^<****>) Beam
超激发原子氧(O^<****>)束超导薄膜生长及其表现机制研究
基本信息
- 批准号:07559003
- 负责人:
- 金额:$ 4.16万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1995
- 资助国家:日本
- 起止时间:1995 至 1996
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In 1996 we modified the metastable beam source made in last year, built mechanical chopper in differential vacuum chamber to pulse the metastable beam. We also built photomultiplier (ceratron) at 50 cm downstream of the chopper, to obtain time-of-flight (TOF) spectrum of the metastable beam by integrating the signal, with the gate signal of the chopper as trigger. The obtained TOF spectra showed that the velocity avarage of He^<**> beam is 3000 m/s, whereas the distribution of O^<**> beam has two peak at the velocity avarage of 2000 and 500 m/s. In addition, we observed fine structures of the O^<**> TOF spectrum. This indicates that the O^<**> beam consists of several O^<**>'s each of which has different energy, and there is a possibility to devide an O^<**> atoms with different energy by TOF method. This result needs further investigation with laser technique etc.We have tried to connect the metastable beam source via a differential chamber with an UHV chamber for the production of superconductive thin film. We noticed that it is difficult to maintain UHV on flowing the O^<**> beam. Hence, we connect a turbo molecular pump with the UHV chamber.Furthermore, we have demonstrated that N^<**> or O^<**> with different excitation energy from that by the above technique can be produced from nitrogen or carbon dioxide gas, and the best condition of the metastable beams are on investigation.
1996年我们对去年研制的亚稳束源进行了改造,在差压真空室中安装了机械斩波器,实现了亚稳束流的脉冲化。我们还在斩波器下游50 cm处建立了光电倍增管(ceratron),以斩波器的门信号作为触发,通过积分信号获得亚稳态光束的飞行时间(TOF)谱。结果表明,He^** 束的平均速度为3000 m/s,而O^** 束的平均速度为2000 m/s和500 m/s时出现两个峰值。此外,我们还观察到了O^** TOF谱的精细结构。这表明,O^**>束是由多个能量不同的O^**>原子组成的,用飞行时间方法分离不同能量的O^**>原子是可能的。这一结果还有待于用激光等技术作进一步的研究。我们曾尝试将亚稳束源通过差压室与超高真空室连接起来,以制备纳米薄膜。我们注意到,在流动O^<**>束时很难保持超高真空。为此,我们将涡轮分子泵与超高真空室相连,并证明了从氮气或二氧化碳气体中可以产生与上述技术不同激发能量的N^**>或O^**>,并探讨了产生亚稳态光束的最佳条件。
项目成果
期刊论文数量(23)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T. Takami et al.: "Recognition of Individual Tail Groups in Self-Assembled Monolayers" Langmuir. 11. 3876-3881 (1995)
T. Takami 等人:“自组装单层细胞中单个尾群的识别”Langmuir。
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
T.Yamanaka et al.: "Observation of the Growth Modes of In on Ga-Covered Si (111) Surfaces Using Ultra-High Vacuum Scanning Electron Microscopy" Surface Science. 356. 39-46 (1996)
T.Yamanaka 等人:“使用超高真空扫描电子显微镜观察 Ga 覆盖的 Si (111) 表面上 In 的生长模式”表面科学。
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
T.Yamanaka et al.: "Atomic Depth Distributuion Analysis of In and Ga on Si (111) during Epitaxial Growth and a New Type of Surfactant-Mediated Epitaxy" Japnese Journal of Applied Physics. 35. 3991-3998 (1996)
T.Yamanaka 等人:“外延生长过程中 Si (111) 上 In 和 Ga 的原子深度分布分析和新型表面活性剂介导的外延”日本应用物理学杂志。
- DOI:
- 发表时间:
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- 影响因子:0
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C.S.Jiang et al.: "Surface Conductivity for Au or Ag on Si (111)" Physical Review B. 54. 10389-10392 (1996)
C.S.Jiang 等人:“Si (111) 上 Au 或 Ag 的表面电导率”Physical Review B. 54. 10389-10392 (1996)
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- 影响因子:0
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- 通讯作者:
T. Hanada et al.: "Rocking-curve Analysis of Reflection High-Energy Electron Diffraction from the Si(111)(√3x√3)R30°-Al, -Ga, -In Surfaces" Physical Review B. 51. 13320-13325 (1995)
T. Hanada 等人:“Si(111)(√3x√3)R30°-Al、-Ga、-In 表面反射高能电子衍射的摇摆曲线分析”物理评论 B. 51. 13320 -13325 (1995)
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{{ truncateString('INO Shozo', 18)}}的其他基金
The structure control of metal fine particle with micelle structure and the development of ferromagnet
胶束结构金属微粒的结构控制及铁磁体的发展
- 批准号:
11490003 - 财政年份:1999
- 资助金额:
$ 4.16万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Structure and physical propertied of nano micelle with the nucleus of multiply twinned particles
多重孪晶核纳米胶束的结构与物理性质
- 批准号:
08459007 - 财政年份:1996
- 资助金额:
$ 4.16万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study of Atom Dynamics and Surface Conductance during Epitaxial Growth
外延生长过程中原子动力学和表面电导的研究
- 批准号:
06455007 - 财政年份:1994
- 资助金额:
$ 4.16万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Appararus of Reflection High Energy Electron Diffraction-Physical Proparty Measurments for Grown Surface Atomic Layr at Low temperature
低温生长表面原子层反射高能电子衍射物理原方测量装置
- 批准号:
05559005 - 财政年份:1993
- 资助金额:
$ 4.16万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Atomic Image Observation and nano area Analysis of Epitaxial Process of Metals on Semiconductor by Ultrahigh Vacuum Scanning Electron Microscopy
超高真空扫描电镜对半导体上金属外延过程的原子图像观察和纳米区分析
- 批准号:
04452035 - 财政年份:1992
- 资助金额:
$ 4.16万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
A developement of a new method to observe the direct image of surface atomic arrangements and a research of surface superlattice structures on semiconductors
表面原子排列直接成像观察新方法的发展及半导体表面超晶格结构的研究
- 批准号:
60065003 - 财政年份:1985
- 资助金额:
$ 4.16万 - 项目类别:
Grant-in-Aid for Specially Promoted Research
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