Appararus of Reflection High Energy Electron Diffraction-Physical Proparty Measurments for Grown Surface Atomic Layr at Low temperature

低温生长表面原子层反射高能电子衍射物理原方测量装置

• 批准号: 05559005
• 负责人: INO Shozo
• 金额: $ 4.48万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05559005/
• 关键词: reflection high energy electron diffraction; surface conductivity; epitaxy; semiconductor surface; metal ultra thin film; 反射高速電子回折(RHEED)

We constructed a sample holder which can cool to low temperature and measure physical proparties during growth of surface atomic layrs. The sample holder was combined with an exsisting RHEED apparatus. Using the instrument, we measured RHEED intensity oscillations, depth distributions of surface elements and surface conductance.The important factors to govern epitaxy are substrate temperature, deposition rate and atom supplying methods etc. Thus, we changed systematically surface temperatures and deposition rates, during Ag and Cu deposition on Si (111) surface. As a result, we obtained following results. (1) When surface temeperature was decreased to 160 K,many RHEED intensity oscillations (20-46 peaks) were observed compered with at room temperature, (2) For higher deposition rate of 20ML/min. many RHEED oscillation peaks were observed.(3) These experimental results show that the change of surface temperatures and deposition rates induce the change of diffusion length. Considering th … More e effects, we proposed a new growth modes.When Au was deposited on a Si (111) -ROO<3>*ROO<3>-Ag surface, we found new growth modes "substitution atom growth mode" and "floating atom growth modes". To study the stability of the structures, we heated these surface to higher temperatures. As a result, these surface structures were stable under about 300ﾟC.However, they were unstable and change to an alloy above 400ﾟC.These results are not contradict to the old phase diagram of Au-Ag alloy. Thus, our results implying that the stability of the Au-Ag alloy must be reexamine considering the surface effects. This is a new essential problem on the stability for Au-Ag alloy.During Ag deposition on the Si (111) -ROO<3>*ROO<3>-Ag surface, we found new surface structures, ROO<21>*ROO<21>-Ag and 6*6-Ag. These structures showed diffrent surface conductance and their behaviors during epitaxy. This means that the surface conductance measurements gives very important infomations for surface structure study. Less

我们制作了一个样品保持器，它可以冷却到低温并测量表面原子层生长过程中的物理性质。样品保持器与现有的RHEED装置相结合。利用该仪器，我们测量了RHEED强度振荡、表面元素深度分布和表面电导.控制外延生长的重要因素是衬底温度、沉积速率和原子供给方式等.因此，我们在Si（111）表面上沉积Ag和Cu时，系统地改变了表面温度和沉积速率.结果，我们得到了以下结果。(1)当表面温度降低到160 K时，与室温相比，观察到了许多RHEED强度振荡（20-46个峰）。（2）在较高的沉积速率（20 ML/min）下，观察到了许多RHEED振荡峰。(3)实验结果表明，表面温度和沉积速率的变化引起扩散长度的变化。考虑到 ...更多信息 当在Si（111）-ROO <3>*ROO<3>-Ag表面上沉积Au时，发现了新的生长模式“替代原子生长模式”和“浮动原子生长模式”。为了研究结构的稳定性，我们将这些表面加热到更高的温度。结果表明，这些表面结构在300 ℃以下是稳定的，而在400 ℃以上则不稳定，并转变为合金。这些结果与旧的Au-Ag合金相图并不矛盾。因此，我们的研究结果表明，必须重新考虑的表面效应的Au-Ag合金的稳定性。在Si（111）-ROO <3>*ROO<3>-Ag表面沉积Ag的过程中，我们发现了新的表面结构：ROO <21>*ROO<21>-Ag和6*6-Ag。这些结构表现出不同的表面电导和外延过程中的行为。这意味着表面电导测量为表面结构研究提供了非常重要的信息。少

项目成果

長谷川修司・井野正三: "Structure-dependent surface conductance at initial stages in metal epitaxy on Si(111)surfaces" Thin Solid Films. 228. 113-116 (1993)

Shuji Hasekawa 和 Shozo Ino：“Si(111) 表面金属外延初始阶段的结构相关表面电导”薄固体薄膜。228. 113-116 (1993)

Z.H.Zhang, S.Hasegawa and S.Ino: "RHEED-TRAXS Study of Surface Structure and Thermal Desorption of Cu on Si (111) Surface" Structure of Surf.4. 371-376 (1993)

Z.H.Zhang、S.Hasekawa 和 S.Ino：“RHEED-TRAXS 研究 Si(111) 表面 Cu 的表面结构和热脱附”Surf.4 的结构。

井野正三、長谷川修司、山中俊朗: "Surface Dynamics and Surface Conductance in Epitaxial Growth by RHEED and TRAXS" Physics of Low-Dimensional Structures. 2. 1-9 (1994)

Shozo Ino、Shuji Hasekawa、Toshiro Yamanaka：“RHEED 和 TRAXS 外延生长中的表面动力学和表面电导”低维结构物理 2. 1-9 (1994)。

T.Handa, S.Ino and H.Daimon: "Study of the Si (111) -7*7 Surface by RHEED Rocking Curve Analysis." Surf.Sci.313. 143-154 (1994)

T.Handa、S.Ino 和 H.Daimon：“通过 RHEED 摇摆曲线分析研究 Si (111) -7*7 表面。”

長谷川修司,井野正三: "Correlation Between Atomic-Scale Structure and Macroscopic Electrical Properties of Metal-Covered Si(111)Surtaces Investigated by in-situ Measurenront in UHV" The Structure of Surtaces. 4. 377-382 (1993)

Shuji Hasekawa、Shozo Ino：“通过特高压原位测量研究金属覆盖的 Si(111) 表面的原子尺度结构与宏观电性能之间的相关性”表面结构 4. 377-382 (1993)。