Appararus of Reflection High Energy Electron Diffraction-Physical Proparty Measurments for Grown Surface Atomic Layr at Low temperature
Appararus of Reflection High Energy Electron Diffraction-Physical Proparty Measurments for Grown Surface Atomic Layr at Low temperature
批准号:
05559005
负责人:
INO Shozo
金额:
$4.48万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
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英文摘要
We constructed a sample holder which can cool to low temperature and measure physical proparties during growth of surface atomic layrs. The sample holder was combined with an exsisting RHEED apparatus. Using the instrument, we measured RHEED intensity oscillations, depth distributions of surface elements and surface conductance.The important factors to govern epitaxy are substrate temperature, deposition rate and atom supplying methods etc. Thus, we changed systematically surface temperatures and deposition rates, during Ag and Cu deposition on Si (111) surface. As a result, we obtained following results. (1) When surface temeperature was decreased to 160 K,many RHEED intensity oscillations (20-46 peaks) were observed compered with at room temperature, (2) For higher deposition rate of 20ML/min. many RHEED oscillation peaks were observed.(3) These experimental results show that the change of surface temperatures and deposition rates induce the change of diffusion length. Considering th … More e effects, we proposed a new growth modes.When Au was deposited on a Si (111) -ROO<3>*ROO<3>-Ag surface, we found new growth modes "substitution atom growth mode" and "floating atom growth modes". To study the stability of the structures, we heated these surface to higher temperatures. As a result, these surface structures were stable under about 300゚C.However, they were unstable and change to an alloy above 400゚C.These results are not contradict to the old phase diagram of Au-Ag alloy. Thus, our results implying that the stability of the Au-Ag alloy must be reexamine considering the surface effects. This is a new essential problem on the stability for Au-Ag alloy.During Ag deposition on the Si (111) -ROO<3>*ROO<3>-Ag surface, we found new surface structures, ROO<21>*ROO<21>-Ag and 6*6-Ag. These structures showed diffrent surface conductance and their behaviors during epitaxy. This means that the surface conductance measurements gives very important infomations for surface structure study. Less
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長谷川修司・井野正三: "Structure-dependent surface conductance at initial stages in metal epitaxy on Si(111)surfaces" Thin Solid Films. 228. 113-116 (1993)
Shuji Hasekawa 和 Shozo Ino:“Si(111) 表面金属外延初始阶段的结构相关表面电导”薄固体薄膜。228. 113-116 (1993)
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影响因子:
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作者:
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通讯作者:
Z.H.Zhang, S.Hasegawa and S.Ino: "RHEED-TRAXS Study of Surface Structure and Thermal Desorption of Cu on Si (111) Surface" Structure of Surf.4. 371-376 (1993)
Z.H.Zhang、S.Hasekawa 和 S.Ino:“RHEED-TRAXS 研究 Si(111) 表面 Cu 的表面结构和热脱附”Surf.4 的结构。
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通讯作者:
井野正三、長谷川修司、山中俊朗: "Surface Dynamics and Surface Conductance in Epitaxial Growth by RHEED and TRAXS" Physics of Low-Dimensional Structures. 2. 1-9 (1994)
Shozo Ino、Shuji Hasekawa、Toshiro Yamanaka:“RHEED 和 TRAXS 外延生长中的表面动力学和表面电导”低维结构物理 2. 1-9 (1994)。
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T.Handa, S.Ino and H.Daimon: "Study of the Si (111) -7*7 Surface by RHEED Rocking Curve Analysis." Surf.Sci.313. 143-154 (1994)
T.Handa、S.Ino 和 H.Daimon:“通过 RHEED 摇摆曲线分析研究 Si (111) -7*7 表面。”
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作者:
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通讯作者:
長谷川修司,井野正三: "Correlation Between Atomic-Scale Structure and Macroscopic Electrical Properties of Metal-Covered Si(111)Surtaces Investigated by in-situ Measurenront in UHV" The Structure of Surtaces. 4. 377-382 (1993)
Shuji Hasekawa、Shozo Ino:“通过特高压原位测量研究金属覆盖的 Si(111) 表面的原子尺度结构与宏观电性能之间的相关性”表面结构 4. 377-382 (1993)。
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共 23 条
The structure control of metal fine particle with micelle structure and the development of ferromagnet
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批准号:11490003
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$9.09万
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财政年份:1999
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负责人:INO Shozo
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依托单位:
Structure and physical propertied of nano micelle with the nucleus of multiply twinned particles
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批准号:08459007
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.18万
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财政年份:1996
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负责人:INO Shozo
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依托单位:
Study of Superconductor Thin Film Growth and the manifestation Mechanism Using Super-Excited Atomic Oxygen (O^<****>) Beam
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批准号:07559003
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.16万
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财政年份:1995
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负责人:INO Shozo
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依托单位:
Study of Atom Dynamics and Surface Conductance during Epitaxial Growth
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批准号:06455007
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$5.06万
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财政年份:1994
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负责人:INO Shozo
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依托单位:
Atomic Image Observation and nano area Analysis of Epitaxial Process of Metals on Semiconductor by Ultrahigh Vacuum Scanning Electron Microscopy
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批准号:04452035
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.29万
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财政年份:1992
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负责人:INO Shozo
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依托单位:
A developement of a new method to observe the direct image of surface atomic arrangements and a research of surface superlattice structures on semiconductors
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批准号:60065003
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项目类别:Grant-in-Aid for Specially Promoted Research
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资助金额:$178.24万
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财政年份:1985
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负责人:INO Shozo
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依托单位:
海外基金