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Atomic Image Observation and nano area Analysis of Epitaxial Process of Metals on Semiconductor by Ultrahigh Vacuum Scanning Electron Microscopy

超高真空扫描电镜对半导体上金属外延过程的原子图像观察和纳米区分析

基本信息

批准号：
04452035
负责人：
INO Shozo
金额：
$ 4.29万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

项目摘要

In 1992, we constructed a small vacuum chamber in which we can check sample surface condition, and combined it to the ultrahigh vacuum scanning electron microscope(UHV-SEM). We completed a SEM apparatus in which we can study beforehand the surface structures by reflection high energy electron diffraction(RHEED) and surface elementaly analysis by total reflection angle X-ray spectroscopy(TRAXS) and then the sample can move into SEM apparatus without exposing it in air.We deposited Au, Ag, Bi, Ga, In etc.on a Si(111) surface and investigated the surface structures and surface compositions. These surfaces were also observed by UHV-SEM.When 1ML(mono layr) of Bi was deposited on the Si(111)-7X7 surface, three types of contrast, B(beta-ROO<3>XROO<3>), M(alpha-ROO<3>XROO<3>) and D(7X7) were observed. The contrast B and M were clerly observed along the substrate steps and anti-phase domain boundaries of th 7X7 structure.In 1993, we studied the composition analysis of nano meter area by TRAXS in UHV-SEM.The investigated surfaces were In/Si(111)-7X7, In/Si(111)-4X1-In, In/(Si(111)-ROO<3>XROO<3>-Ga, Ga/Si(111)-7X7, Ga/Si(111)-ROO<3>XROO<3>-Ag, Ag/Si(111)-ROO<3>XROO<3>-Ga etc.(In_2Ga)In structure which was formed when 3ML of In were deposited on the Si(111)-ROO<3>XROO<3>-Ga showed specially intresting SEM images. This structure showed a very flat structure within a terrace. For futher deposition In layr incresed layr by layr fasion without the steps within a terras, resulting in an interesting structure which shuld be denoted (In_2Ga)In_m(m=1,2,3...). Thus, we obtained many interesting results in this study.

在1992年，我们建造了一个小型的真空室，在其中我们可以检查样品的表面状况，并将其结合到超真空扫描电子显微镜（UHV-SEM）。我们完成了一个扫描电镜装置，在该装置中，我们可以预先用反射高能电子衍射（RHEED）和全反射角X射线光谱（TRAXS）研究表面结构，然后将样品移动到扫描电镜装置中，而不暴露在空气中，我们在Si（111）表面上沉积了Au，Ag，Bi，Ga，In等，并研究了表面结构和表面成分。当在Si（111）-7 X 7表面上沉积1 ML（单层）Bi时，观察到三种类型的对比度：B（β-ROO <3>XROO<3>），M（α-ROO <3>XROO<3>）和D（7 X 7）。1993年，我们在超高真空扫描电镜中用TRAXS对In/Si（111）-7X7，In/Si（111）-4X1-In，In/（Si（111）-ROO <3>XROO<3>-Ga，Ga/Si（111）-7X7，Ga/Si（111）-ROO <3>XROO<3>-Ag，Ag/Si（111）-ROO <3>XROO<3>-Ga等表面进行了纳米区成分分析。(In在Si（111）-ROO-XROO -Ga上沉积3 ML In时形成的（2Ga）In结构<3><3>显示出特别有趣的SEM图像。这座建筑是一个非常平坦的平台结构。在进一步的沉积中，In层逐渐增加，而层内没有台阶，得到一种有趣的结构，记为（In_2Ga）In_m（m= 1，2，3…）。因此，我们在这项研究中获得了许多有趣的结果。