Study of Atom Dynamics and Surface Conductance during Epitaxial Growth

外延生长过程中原子动力学和表面电导的研究

• 批准号: 06455007
• 负责人: INO Shozo
• 金额: $ 5.06万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06455007/
• 关键词: reflection high energy electron diffraction; scanning tunneling microscopy; surface conductivity; epitaxy; semiconductor surface; metal ultra thin film

We have studied surface structures, surface composition and surface conductivity during epitaxy by RHEED (Reflection High Energy Electron Diffraction), TRAXS (Total Reflection Angle X-ray Spectroscopy). RHEED is powerfull for structure analysis through reciprocal lattice and STM (Scanning Tunneling Microscopy) is powerfull for obsrvation of the lattice images in the real space. Thus, this project is to study the epitaxial phenomenon by using a combined apparatus of RHEED-TRAXS and STM.In 1994, we obtained a STM observation head and constructed a instrument which can approach slowly to the sample surface and a scanning system. In 1995, we obtained a low voltage power supply, a picture processing system and a probe scanning circuit and complated as a system which can observe RHEED patterns and STM images.Using the apparatus, we studied clean Si (111) surface structure and reconstructed surface structures which were formed by In deposition on Si (111) surface. STM images of the clean surface showing a clear 7X7 RHEED pattern showed partly no 7X7 contrast in the STM images. It is thought that some gases may adsorbed on the 7X7 surface during cooling. If the 7X7 structure is not destroy by the gas adsorption, a clear RHEED pattern would be observed. However, STM image may be affected very much even at slight gas adsorption. Next, we observed 1X1,4X1, @6931X@6931, @693X@693 structures when In was deposited on a Si (111) surface. We studied these structures in details by STM and analyzed. We proposed new surface structure models for such reconstructed surface structures. Besides, we measured the surface conductivity during the epitaxial processes.

我们通过RHEED（反射高能电子衍射）、TRAXS（全反射角X射线光谱）研究了外延过程中的表面结构、表面成分和表面电导率。 RHEED 非常适合通过倒晶格进行结构分析，而 STM（扫描隧道显微镜）则非常适合观察真实空间中的晶格图像。因此，本项目就是利用RHEED-TRAXS和STM的组合装置来研究外延现象。1994年，我们获得了STM观察头，并建造了一个可以缓慢接近样品表面的仪器和扫描系统。 1995年，我们获得了低压电源、图像处理系统和探针扫描电路，并编译成可以观察RHEED图案和STM图像的系统。利用该设备，我们研究了清洁的Si（111）表面结构和重构了在Si（111）表面沉积In形成的表面结构。显示清晰 7X7 RHEED 图案的清洁表面的 STM 图像显示 STM 图像中部分没有 7X7 对比度。据认为，在冷却过程中，一些气体可能会吸附在7X7表面上。如果 7X7 结构没有被气体吸附破坏，则可以观察到清晰的 RHEED 图案。然而，即使有轻微的气体吸附，STM 图像也可能受到很大影响。接下来，当In沉积在Si（111）表面上时，我们观察到1X1，4X1，@6931X@6931，@693X@693结构。我们通过STM详细研究了这些结构并进行了分析。我们为这种重建的表面结构提出了新的表面结构模型。此外，我们还测量了外延过程中的表面电导率。

项目成果

N.Shimonura, T.Yamanaka, and S.Ino: "Observation of In Growth Modes on Si (111)-@693X@693-Ga using Ultrahigh Vacuum Scanning Electron Microscope." Jpn.J.Appl.Phys.34. 6201-6209 (1995)

N.Shimonura、T.Yamanaka 和 S.Ino：“使用超高真空扫描电子显微镜观察 Si (111)-@693X@693-Ga 上的生长模式。”

中山俊朗、花田貴、井野正三: "Electron Standing Wave at a Surface during Reflection High Energy Electron Diffraction and Atom Height Determination" Physical Review Letters. 75. 669-672 (1995)

Toshiro Nakayama、Takashi Hanada、Shozo Ino：“反射高能电子衍射和原子高度测定期间表面的电子驻波”物理评论快报 75. 669-672 (1995)。

高見知秀 他3名: "Structural Correlation among Different Phases in the Initial Stage of Epitaxial Grourth of Au on Si(lll)" Japan. J.Applied Physics. 33. 3688-3695 (1994)

Tomohide Takami 等 3 人：“Si(III) 上 Au 外延生长初始阶段的结构相关性”，日本应用物理杂志 33. 3688-3695 (1994)。

Y, Ma, S. Lordi, J. A. Eades 井野正三: "Reflection High-Energy Eletron Diffraction Amalysis of the Si(111)7×7 Reconstruction" Physical Review. B49. 17488-17451 (1994)

Y, Ma, S. Lordi, J. A. Eades Shozo Ino：“Si(111)7×7 重建的反射高能电子衍射分析”物理评论 B49。

Z.H.Zhang, S.Hasegawa, and S.Ino: "Reconstruction and Growth of Ag on the Si (111)-@693X@693-Ag Surface at low Temperature." Phys.Rev.B. 52. 10760-10763 (1995)

Z.H.Zhang、S.Hasekawa 和 S.Ino：“低温下 Ag 在 Si (111)-@693X@693-Ag 表面上的重建和生长”。