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A developement of a new method to observe the direct image of surface atomic arrangements and a research of surface superlattice structures on semiconductors

表面原子排列直接成像观察新方法的发展及半导体表面超晶格结构的研究

基本信息

批准号：
60065003
负责人：
INO Shozo
金额：
$ 178.24万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Specially Promoted Research
财政年份：
1985
资助国家：
日本
起止时间：
1985 至 1987
项目状态：
已结题

项目摘要

This project intend to study the furface superstructures by detecting X-rays emitted from crystal surfaces irradiated by an electron beam or an ion beam. applying "total reflection angle X-ray spectroscopy (TRAXS)" which has discovered by ourselves.According to this purpose. we constructed some new apparatus. such as an electron-beam TRAXS apparatus (1985), a photoelectron-diffraction apparatus (1985), an ion-beam TRAXS apparatus (1987), an apparatus for observation of surface atomic arrangements (1986) etc. We studied at first in detail the phenomena and mechanism of electron-beam TRAXS. As a result, it was clarified that the method have many advantages. such as (1):It is possible that the surface analysis of an area from where the RHEED pattern is produced,(2):Surface analysis is possible for the adsorbate ranging from 0.01 monoatomic layer to 10.000 monoatomic layers. (3):It is possible to measure the amount of the adsorbates irrespective of the growth modes. (4):It is possible to control the depth of the detection layers. (5):It is possible to study elementary analysis and the structure analysis at the interfaces inside the crystals.Considering the above advantages and others. we developed new methods for surface structure analysis. such as. electron-beam TRAXS. ion-beam AES and ion-beam TRAXS. During photoelectron diffraction studies. we invented a new type electron energy analyzer. It is possible to observe directly the two-dimensional intensity distribution within the large solid angle of 2 . for the electrons emitted from a point of surface and having the same energy. We constructed a new apparatus for observation of surface atomic arrangement. in which the diameter of the electron beam is about 5A and operated in an ultra high vacuum of 1.7x10-10 Torr. Obtained resolution was about 1.4 A゜ at present.

本计画系利用电子束或离子束照射晶体表面所产生之X射线，来研究晶体表面之超结构。应用我们自己发现的“全反射角X射线光谱（TRAXS）”。根据这个目的。我们建造了一些新的仪器。如电子束TRAXS装置（1985）、光电子衍射装置（1985）、离子束TRAXS装置（1987）、表面原子排列观察装置（1986）等。结果表明，该方法具有许多优点。例如（1）：可以对产生RHEED图案的区域进行表面分析，（2）：可以对范围从0.01个单原子层到10.000个单原子层的吸附物进行表面分析。(3)可以测量吸附物的量，而不管生长模式如何。(4)可以控制检测层的深度。(5)考虑到上述优点和其他优点，可以研究晶体内部界面处的元素分析和结构分析。我们开发了表面结构分析的新方法。如.电子束TRAXS离子束AES和离子束TRAXS。在光电子衍射研究中。我们发明了一种新型的电子能量分析仪。可以直接观察2 °大立体角内的二维强度分布。对于从表面的一点发射的具有相同能量的电子。我们构造了一种新的观察表面原子排列的装置。其中电子束的直径约为5A，并在1.7 × 10 -10托的超高真空中操作。目前获得的分辨率约为1.4A Ω。