Basic Study of ultra fine beam by field emitter arrays

场发射阵列超细光束基础研究

• 批准号: 07650389
• 负责人: SHIMAWAKI Hidetaka
• 金额: $ 1.41万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650389/
• 关键词: cold cathode; field emission; electronbeam; electro-optics; vacuum microelectronics

Si field emitter is a promising candidate for electron sources in vacuum microelectronics. The current control and the stabilization in the field emission of gated emitter arrays (FEAs) are the highest demand for applications to a flat panel display and other beam devices. The beam focusing technique, additionally, might be necessary for a high quality microbeam. By fabricating FEA monolithically with FET of TFT,the emission current will be controlled and stabilized by applying a few volts on the gate of FET of TFT.We proposed and fabricated a monolithic emitter with Si-FEA and JFET.The controllability and the stability of the emission current from Si-FEA were significantly improved by the monolithic emitter. For the development of a high brightness microbeam, we fabricated a new FEA structure with an in-plane focusing electrode which surrounds an individual gated emitter or a block of gated emitter array. Experimental results showed that the divergence of emitted electron was well focused by decreasing the focusing gate voltage.

硅场发射体是真空微电子学中电子源的有前途的候选者。门控发射器阵列 (FEA) 场发射的电流控制和稳定性是平板显示器和其他光束设备应用的最高要求。此外，光束聚焦技术对于高质量微束可能是必要的。通过与TFT的FET单片制作FEA，通过在TFT的FET栅极上施加几伏的电压来控制和稳定发射电流。我们提出并制作了Si-FEA和JFET的单片发射极。单片发射极显着提高了Si-FEA发射电流的可控性和稳定性。为了开发高亮度微束，我们制造了一种新的有限元分析结构，该结构具有平面内聚焦电极，该电极围绕单个门控发射器或门控发射器阵列块。实验结果表明，降低聚焦栅电压可以很好地聚焦发射电子的发散角。

项目成果

石塚 浩: "ビーム物理研究における微小電子源の利用" 信学技報. ED95-129. 1-8 (1995)

Hiroshi Ishizuka：“微电子源在束物理研究中的应用”IEICE 技术报告 ED95-129 (1995)。

H.Ishizuka: "Beam Extraction Experiment with Field Emission Arrays" Tech. Digest of 17th Free Electron Laser Conf.1- (1995)

H.Ishizuka：“场发射阵列的光束提取实验”技术。

M.Arai, M.Mori, H.Kayama, M,Kawakami, H.Shimawaki and K.Yokoo: ""Emission Characteristics of Si Field Emitter Array"" Tech.Report of IEICE. ED95-136. 1-8 (1995)

M.Arai、M.Mori、H.Kayama、M、Kawakami、H.Shimawaki 和 K.Yokoo：““硅场发射器阵列的发射特性””IEICE 的技术报告。

K.Yokoo: "Active Control of the Emission Current of Field Emitter Arrays" J. Vacuum Sci. and Tech. B. 13. 491-493 (1995)

K.Yokoo：“场发射器阵列发射电流的主动控制”J. Vacuum Sci。

H.Ishizuka,et al.: "Beam Extraction Experiment with Field-Emission Arrays" Nucl.Instr.and Meth.A375. 116-118 (1996)

H.Ishizuka 等人：“场发射阵列的光束提取实验”Nucl.Instr.and Meth.A375。