Basic Study of ultra fine beam by field emitter arrays

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Si field emitter is a promising candidate for electron sources in vacuum microelectronics. The current control and the stabilization in the field emission of gated emitter arrays (FEAs) are the highest demand for applications to a flat panel display and other beam devices. The beam focusing technique, additionally, might be necessary for a high quality microbeam. By fabricating FEA monolithically with FET of TFT,the emission current will be controlled and stabilized by applying a few volts on the gate of FET of TFT.We proposed and fabricated a monolithic emitter with Si-FEA and JFET.The controllability and the stability of the emission current from Si-FEA were significantly improved by the monolithic emitter. For the development of a high brightness microbeam, we fabricated a new FEA structure with an in-plane focusing electrode which surrounds an individual gated emitter or a block of gated emitter array. Experimental results showed that the divergence of emitted electron was well focused by decreasing the focusing gate voltage.