Basic study on modurated field emission using semiconductor field emitter arrays

半导体场发射体阵列调制场发射的基础研究

• 批准号: 11650338
• 负责人: SHIMAWAKI Hidetaka
• 金额: $ 2.11万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650338/
• 关键词: cold cathode; field emission; electro-optics; modurated field emission; vacuum microelectronics; photo-excited field emission

The generation of moduration electron beam at the frequency renges from microwave to teraherz wave provides a highly efficient, frequency tunable, midium power and compact electro-magnetic wave sources at the frequencies. A semiconductor FEA produces excess emission current by photo-excitation due to generation of electron-hole pair in the semiconductor emitter tips. Then, a moduration beam over terahertz frequency is produced by photo-excitation of femtosecond laser pulses and two continuous and frequency-offset pump laser.We fabricated p-type Si FEA and examined the emission characteristics. It was verified that the emissioncurrent was saturated by the limitation of the minority carrier density in the p-type substrate and the current stabirity in the saturation ragion was less than 10% of average emission current. Additionally, the emission current from p-type Si FEA was controlled by the laser intensity and the temperature of the substrate due to generation of electron-hole pair in the semiconductor emitter tips.

频率范围从微波到太赫兹波的调制电子束的产生提供了一种高效、频率可调、中功率、紧凑的频率电磁波源。半导体FEA由于在半导体发射极尖端中产生电子-空穴对而通过光激发产生过量发射电流。然后，利用飞秒激光脉冲和两束连续的、频率偏移的泵浦光，产生了太赫兹频率以上的调制光束，制备了p型Si FEA，并对其发射特性进行了测试。结果表明，受p型衬底中少数载流子浓度的限制，发射电流处于饱和状态，饱和区的电流稳定度小于平均发射电流的10%。此外，由于半导体发射极尖端中电子-空穴对的产生，来自p型Si FEA的发射电流由激光强度和衬底温度控制。

项目成果

H.Mimura, H.Shimawaki, K.Yokoo: "Emission Characteristics from Semiconductor Cathodes"IEICE C. Vol.J83-C, No.8. 673-680 (2000)

H.Mimura、H.Shimawaki、K.Yokoo：“半导体阴极的发射特性”IEICE C. Vol.J83-C，No.8。

三村秀典: "GaAs系電界放射陰極(II)"第61回応用物理学会学術講演会(秋季)講演予稿集. 2. 6p-ZB-13 (2000)

三村英德：“GaAs基场致发射阴极（II）”第61届日本应用物理学会学术会议论文集（秋季）2. 6p-ZB-13（2000）。

K.Yokoo: "Functional Field Emission for High Frequency Wave Application"Tech. Digest of 12th Int. Vac. Microelectronics Conf.. 206-207 (1999)

K.Yokoo：“高频波应用的功能场发射”技术。

H.Mimura: "Resonant tunneling emission from GaAs/AlAs quantum structures"Tech.Digest of 12th Int.Vac.Microelectronics Conf.. 378-379 (1999)

H.Mimura：“GaAs/AlAs 量子结构的共振隧道发射”Tech.Digest of 12th Int.Vac.MicroElectronics Conf.. 378-379 (1999)

H.Ishizuka: "Smith-Purcell radiation experiment using a field-emission arrays"Nuclear Instruments and Methods in Physics Research. A445. 276-280 (2000)

H.Ishizuka：“使用场发射阵列的史密斯-珀塞尔辐射实验”物理研究中的核仪器和方法。