Basic study on modurated field emission using semiconductor field emitter arrays

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The generation of moduration electron beam at the frequency renges from microwave to teraherz wave provides a highly efficient, frequency tunable, midium power and compact electro-magnetic wave sources at the frequencies. A semiconductor FEA produces excess emission current by photo-excitation due to generation of electron-hole pair in the semiconductor emitter tips. Then, a moduration beam over terahertz frequency is produced by photo-excitation of femtosecond laser pulses and two continuous and frequency-offset pump laser.We fabricated p-type Si FEA and examined the emission characteristics. It was verified that the emissioncurrent was saturated by the limitation of the minority carrier density in the p-type substrate and the current stabirity in the saturation ragion was less than 10% of average emission current. Additionally, the emission current from p-type Si FEA was controlled by the laser intensity and the temperature of the substrate due to generation of electron-hole pair in the semiconductor emitter tips.