Basic study on current stabilization of field emission in field emitter arrays

硅场发射阵列是真空微电子器件中一种很有前途的电子源。场发射阵列（FEAs）的电流控制和稳定性是平板显示器（FED）和其他电子束器件应用的最高要求。为了表征微米级电子束，研究了双栅场效应管引出束流的传输特性和发射度。实验结果表明，在10 nA ~ 50 mA的束流范围内，束流的归一化发射度为10 μ mrad的几倍<-7pi>。此外，我们还研究了DLC涂层多晶硅场致发射体的发射特性，并提出了一个解释这种特性的发射模型。的电子亲和势为2.9 eV的发射体估计通过应用该模型的实验结果。

Si-field emitter arrays is a promising candidate for electron sources in vacuum microelectronic devices. The current control and the stabilization of the field emission in emitter arrays (FEAs) are the highest demand for applications to a flat panel display (FED) and other beam devices. Propagation characteristics and emittance of beams extracted from double gated FEAs were investigated to characterize micron size electron beam. It was verified that beamlets emitted from the tips were parallel to each other and normalized emittance of the beam was a few times 10^<-7pi> mrad within the beam current of the measured rang of 10 nA to 50 mA.In addition, we examined emission characteristics of a DLC coated polysilicon field emitter and proposed a emission model to explain the characteristics. An electron affinity of 2.9 eV is estimated for the emitter by applying the model to the experimental results.