Basic study on current stabilization of field emission in field emitter arrays

硅场发射极阵列是真空微电子器件中一种很有前途的电子源。发射极阵列(FEA)的电流控制和场发射的稳定是平板显示器(FED)和其他束流器件应用的最高要求。为了表征微米尺寸的电子束，研究了从双门FEA中提取的电子束的传输特性和发射度。验证了在10~50 mA的束流范围内，针尖发射的束流相互平行，束流归一化发射度为10~(-7)mrad。此外，我们还研究了DLC镀膜多晶硅场发射极的发射特性，并提出了一个发射模型来解释这一特性。将该模型应用于实验结果，估算出该发射体的电子亲和势为2.9 eV。

Si-field emitter arrays is a promising candidate for electron sources in vacuum microelectronic devices. The current control and the stabilization of the field emission in emitter arrays (FEAs) are the highest demand for applications to a flat panel display (FED) and other beam devices. Propagation characteristics and emittance of beams extracted from double gated FEAs were investigated to characterize micron size electron beam. It was verified that beamlets emitted from the tips were parallel to each other and normalized emittance of the beam was a few times 10^<-7pi> mrad within the beam current of the measured rang of 10 nA to 50 mA.In addition, we examined emission characteristics of a DLC coated polysilicon field emitter and proposed a emission model to explain the characteristics. An electron affinity of 2.9 eV is estimated for the emitter by applying the model to the experimental results.