Basic study on current stabilization of field emission in field emitter arrays

场发射阵列中场发射电流稳定性的基础研究

• 批准号: 09650377
• 负责人: SHIMAWAKI Hidetaka
• 金额: $ 2.18万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650377/
• 关键词: cold cathode; field emission; electro-optics; DLC; vacuum microelectronics; 真空マイクロエレクトロニクス; 冷陰極; 電界放射; 電子ビーム

Si-field emitter arrays is a promising candidate for electron sources in vacuum microelectronic devices. The current control and the stabilization of the field emission in emitter arrays (FEAs) are the highest demand for applications to a flat panel display (FED) and other beam devices. Propagation characteristics and emittance of beams extracted from double gated FEAs were investigated to characterize micron size electron beam. It was verified that beamlets emitted from the tips were parallel to each other and normalized emittance of the beam was a few times 10^<-7pi> mrad within the beam current of the measured rang of 10 nA to 50 mA.In addition, we examined emission characteristics of a DLC coated polysilicon field emitter and proposed a emission model to explain the characteristics. An electron affinity of 2.9 eV is estimated for the emitter by applying the model to the experimental results.

硅场发射阵列是真空微电子器件中一种很有前途的电子源。场发射阵列（FEAs）的电流控制和稳定性是平板显示器（FED）和其他电子束器件应用的最高要求。为了表征微米级电子束，研究了双栅场效应管引出束流的传输特性和发射度。实验结果表明，在10 nA ~ 50 mA的束流范围内，束流的归一化发射度为10 μ mrad的几倍<-7pi>。此外，我们还研究了DLC涂层多晶硅场致发射体的发射特性，并提出了一个解释这种特性的发射模型。的电子亲和势为2.9 eV的发射体估计通过应用该模型的实验结果。

项目成果

横尾邦義,嶋脇秀隆,三村秀典: "曲薄誘電体薄膜をコートした電界放射陰極アレイの電子放射機構" 第59回応用物理関係連合講演会(秋季). 2. 17p-A-2 (1998)

Kuniyoshi Yokoo、Hidetaka Shimawaki、Hidenori Mimura：“涂有弯曲介电薄膜的场致发射阴极阵列的电子发射机制”第 59 届应用物理会议（秋季）2. 17p-A-2 (1998)。

H.Mimura,K.Yokoo: "Enhancement in electron from polycrystalline silicon field emitter arrays coated with diamond-like carbon"J.Appl.Phys.. 84. 3378-3381 (1998)

H.Mimura,K.Yokoo：“来自涂有类金刚石碳的多晶硅场发射器阵列的电子增强”J.Appl.Phys.. 84. 3378-3381 (1998)

H.Mimura, K.Yokoo: "Enhancement in electron from polycrystalline silicon field emitter arrays coated with diamond-like carbon" J.Appl.Phys.84. 3378-33〓〓 (1998)

H.Mimura、K.Yokoo：“来自涂有类金刚石碳的多晶硅场发射器阵列的电子增强”J.Appl.Phys.84 3378-33〓〓 (1998)。

K.Yokoo: "Emission Characteristics of JFET-Based Field Emitter Aways" Tech.Digest of 55th Annual Device Research Conf.152-153 (1997)

K.Yokoo：“基于 JFET 的场发射器的发射特性”第 55 届年度器件研究大会技术文摘 152-153 (1997)

H.Mimura, K.Yokoo: "Electron Emission from Polycrystalline Silicon Field Emitter Arrays Coated with a Thin Diamond-like Carbon Layer" Tech.Digest of 11th Int.Vac.Microelectronics Conf.33- (1998)

H.Mimura、K.Yokoo：“来自涂有薄类金刚石碳层的多晶硅场发射器阵列的电子发射”第 11 届 Int.Vac.MicroElectronics Conf.33 的技术文摘 - (1998)