Study on electron emission from nanocrystalline silicon

纳米晶硅电子发射研究

• 批准号: 16560306
• 负责人: SHIMAWAKI Hidetaka
• 金额: $ 1.98万
• 依托单位: Hachinohe Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560306/
• 关键词: electron emission; nanocrystalline silicon; cold cathode; vacuum nanoelectronics; 平面型冷陰極; トンネル放射; 電界電子放射

We have fabricated planar-type cathodes based on nanocrystalline silicon thin films deposited by using a pulsed laser ablation technique and examined their emission characteristics. Though the emission current was observed at the gate voltage as low as the work function of the gate material, the emission efficiency was 0.5% at the maximum. The emission current fluctuation was the oder of fifty percent for average emission current. The energy distribution was considerably broad, indicating that electrons were strongly scattered inside the nc-Si layer and the gate electrode. These results are not enough at present. However, we believe that the emission characteristics and reliability will be improved by optimizing the conditions of the laser ablation and the gate electrode, because a laser ablation is an appropriate technique is for fabricating nanocrsytalline Si covered with a thin oxide layer.

我们已经制作了平面型阴极的基础上，纳米晶硅薄膜沉积使用脉冲激光烧蚀技术，并检查其发射特性。虽然在与栅极材料的功函数一样低的栅极电压下观察到发射电流，但发射效率最大为0.5%。发射电流的波动为平均发射电流的50%左右。能量分布相当宽，表明电子在nc-Si层和栅电极内强烈散射。目前，这些成果还不够。然而，我们相信，通过优化激光烧蚀和栅电极的条件，发射特性和可靠性将得到改善，因为激光烧蚀是一种合适的技术，用于制造覆盖有薄氧化物层的纳米晶Si。

项目成果

Emission characteristics of planar-type cathodes based on nanocrystalline silicon thin films

基于纳米晶硅薄膜的平面型阴极的发射特性

• 发表时间: 2006
• 期刊: Ext.Abstracts of the 53rd Spring Meeting ; JSAP and Related Soc.
• 作者: H.Shimawaki;Y.Masuda;Y.Neo;H.Mimura
• 通讯作者: H.Mimura

シリコン微結晶構造を用いた平面型冷陰極の電子放射特性

硅微晶结构平面冷阴极的电子发射特性

• 发表时间: 2006
• 期刊: 第53回応用物理学関係連合講演会予稿集 2
• 作者: T.Tanaka;M.Akazawa;E.Sano;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;嶋脇秀隆
• 通讯作者: 嶋脇秀隆

ELECTRON EMISSION FROM PLANAR-TYPE CATHODE BASED ON NANOCRYSTALLINE SILICON THIN FILMS

基于纳米晶硅薄膜的平面型阴极的电子发射

• 发表时间: 2005
• 期刊: Tech. Digest of the 18th Int. Vacuum Microelectronics Conf.
• 作者: 嶋脇秀隆;増田陽一郎;根尾陽一郎;三村秀典;Hidetaka Shimawaki
• 通讯作者: Hidetaka Shimawaki

Energy distributions of field emission electrons from silicon emitters

硅发射器场发射电子的能量分布

• 发表时间: 2005
• 期刊: J. Vac. Sci. Technol. B 23
• 作者: 嶋脇秀隆;増田陽一郎;根尾陽一郎;三村秀典;Hidetaka Shimawaki;H.Shimawaki
• 通讯作者: H.Shimawaki

Electron emission from planar-type cathodes based on nanocrystalline silicon thin films

基于纳米晶硅薄膜的平面型阴极的电子发射

• 发表时间: 2006
• 期刊: J.Vac.Sci.Tecnol. B24
• 作者: H.Shimawaki;Y.Neo;H.Mimura
• 通讯作者: H.Mimura