Study on electron emission from nanocrystalline silicon

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We have fabricated planar-type cathodes based on nanocrystalline silicon thin films deposited by using a pulsed laser ablation technique and examined their emission characteristics. Though the emission current was observed at the gate voltage as low as the work function of the gate material, the emission efficiency was 0.5% at the maximum. The emission current fluctuation was the oder of fifty percent for average emission current. The energy distribution was considerably broad, indicating that electrons were strongly scattered inside the nc-Si layer and the gate electrode. These results are not enough at present. However, we believe that the emission characteristics and reliability will be improved by optimizing the conditions of the laser ablation and the gate electrode, because a laser ablation is an appropriate technique is for fabricating nanocrsytalline Si covered with a thin oxide layer.