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Water direct bonding for photonic integrated circuits

用于光子集成电路的水直接键合

基本信息

批准号：
08455162
负责人：
YOKOI Hideki
金额：
$ 5.63万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455162/
关键词：
direct bonding photonic integrated circuit semiconductor laser etching mirror optical isolator optical absorption loss 反応性イオンエッチング

项目摘要

An optical isolator is indispensable to protect a laser diode from unwanted reflections for its stable operation. In order to integrate the optical isolator with the laser diode, direct bonding between magnetooptic garnet like (LuNdBi)_3 (FeAl)_5O_<12> and InP/GaInAsP wafers is investigated in this study.The suitable conditions, which include the surface treatment and the temperature of heat treatment, have been found to establish the wafer bonding. The durability of bonded sample was also investigated against several device fabrication processes. It has been found that the bonding is successfully established even at low temperature ranging from 110-220ﾟC in H_2 ambient. The low temperature treatment was effective to suppress an increase in optical absorption loss of the garnet.We examined the possibility of extending the technique to other material combination. It was found that SiO_2 layr deposited by RF sputtering could be bonded to a (100) InP substrate using a similar technique. Because of the surface roughness of SiO_2 layr, the durability of the bonded sample was not sufficient to undergo the full device fabrication processes.The novel optical isolator whose structure is compatible to the device fabrication process has been exploited. It is composed of a GaInAsP guiding layr grown on an InP substrate. The magnetooptic garnet is directly bonded to the GaInAsP guiding layr as an upper cladding layr.

光隔离器是半导体激光器稳定工作所必需的。为了实现光隔离器与半导体激光器的集成，本文研究了磁光石榴石类（LuNdBi）_3（FeAl）<12>_5O_3与InP/GaInAsP晶片的直接键合，确定了合适的键合条件，包括表面处理和热处理温度。结合样品的耐久性也进行了研究，对几个器件的制造工艺。结果表明，在110-220 ℃的低温下，在H_2气氛中，键合仍能成功地建立。低温处理对抑制石榴石的光吸收损耗的增加是有效的。我们研究了将该技术扩展到其他材料组合的可能性。结果表明，射频溅射法制备的SiO_2层可以用类似的方法与（100）InP衬底键合。由于SiO_2层的表面粗糙度，键合样品的耐久性不足以经受整个器件制造过程。它由生长在InP衬底上的GaInAsP导向层组成。磁光石榴石直接结合到GaInAsP引导层作为上包覆层。